TMM323D Search Results

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TMM323D TMM 323D- 1 ¿/oÀhìha 2048 WORD x 8 BIT EPROM N C H A N N E L S I L IC O N S T A C K E D G A T E M O S. DESCRIPTION The T M M 3 23D erasable and m e m o ry . is a 2 0 4 8 w o rd x 8 b it u ltr a v io le t e le c tr ic a lly

soc toshiba

Abstract: TMM323D1 TMM323DI TMM323DI-1
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS Toshiba TMM323DI T M M 3 2 3 D I-1 2 04 8 W O R D x 8 B IT EPR O M N C H A N N E L S IL IC O N S T A C K E D G A T E M O S D E S C R IP T IO N T V 1 U 323!! 1 - , . : ,*• ^ 2 V ’ I', t lisMndUor P'.;./,-'-r : 1 V ' '1 1 n' 1

TMM323D

Abstract: TMM323D-1
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS ¿T oshiba TMM323D TMM323D- 1 2048 WORD x 8 BIT EPROM N C H A N N E L S IL IC O N ST A C K E D G A T E MOS. DESCRIPTION The T M M 3 23D erasable a nd m e m o ry . is a 2 0 4 8 w o rd x 8 b it u ltr a v io le t e le c tr ic a lly

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TMM323DI T M M 3 2 3 D I-1 2 048 W O RD x 8 B IT EPROM N C H A N N E L S I L IC O N S T A C K E D G A T E MOS DESCRIPTION - ; 2 0 4 8 v. T-¡ ^'-r 1|SM! ',il !' " a n ! ö vi ! .;! IbSnW , ‘ t i- V p p ,i- '1 V . . i [ j t 1 . 111•;

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

MB8516

Abstract: MSM2716AS mb8516h C2716 M5L2716K-65 mb8516 fujitsu MCM2716C UPD2716D HM462716G TMS2516
Contextual Info: - 12 7 16 7» + y iâiëïcK] m « ï± £ rc TAAC max ns) TCAC max (ns) TOH max (ns) n te TOE mai (ns) TOD max (ns) VDD (V) A m 1 DD/STANDBY (mA) VIL max (V) tti j l / M -h VIH min (V) £ € üfi (I C i max (pF) V O L / 1 VOL max (V/mA) VOH/IVOH min (V/mA)

IC ANA 618

Abstract: ANA 618 TC5564 tc5516 TMM323D G1JD TMM2764D T6831 TMM32 TOSHIBA Memory 2-level
Contextual Info: TOSHIBA INTEGRATED CIRCUIT TKHN|CAL DATA T6831 T 6 8 3 1 C2-MOS LSI for SPEECH ANALYSIS and SYNTHESIS The T6831 is a single chip C 2-MOS LSI for SPEECH ANALYSIS ar.d SYNTHESIS by the ADM Adaptive Delta Modulation method, -which has an internal 64 Kbit MASK ROM for speech data.

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

TMM323D-1

Abstract: TMM323D
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TM M 323D TM M 323D- 1 2048 WORD X 8 BIT EPROM H C H A N N E L S IL IC O N S T A C K E D G A T E M O S. DESCRIPTION The TM M 323D e r a s a b le and m e m o ry. is a 2 0 4 8 w o r d x 8 b it u lt r a v io le t e l e c t r ic a lly

TC5564

Abstract: TMM323D TC3516
Contextual Info: TOSHIBA INTEGRATED CIRCUIT T6831 TECHNICAL DATA T 6 8 3 1 C2-M0S LSI for SPEECH ANALYSIS and SYNTHESIS The T6831 is a single chip C 2-M0S LSI for SPEECH ANALYSIS and SYNTHESIS by the ADM Adaptive Delta Modulation method, which has an internal 64 Kbit MASK ROM for speech data.