TO-202 TRANSISTOR NPN Search Results

str 6707

Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.

Contextual Info: fcT I ISI E G 2SC D • Ö235b05 G0G4352 T NPN Silicon Planar Transistor BD 424 T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets

2sc 103 transistor

Abstract: transistor BD 430
Contextual Info: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^f’ 33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 429 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 430 it is particularly suitable for use in

transistor BD 424

Abstract: a06 transistor 000M353 BD424 Q62702-D1068 S100 transistor A08 A07 NPN transistor transistor bd 202
Contextual Info: bâ I 25C D • fl23Sb05 G0D4352 T ISIEG BD 424 NPN Silicon Planar Transistor T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets

transistor a13

Abstract: MARKING WL MPSA13 MPSA14
Contextual Info: TRANSYS MPSA13 / MPSA14 ELECTRONICS NPN DARLINGTON TRANSISTOR LIMITED Features High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data_ Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,

Contextual Info: MPSA92 PNP HIGH VOLTAGE SMALL SIGNAL TRANSISTOR Features • • • Epitaxial Planar Die Construction -300V Collector-Emitter Voltage Complimentary NPN Type Available MPSA42 KM TO-92 Mechanical Data_ Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,

BD429

Abstract: D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor
Contextual Info: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^ f’33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 4 2 9 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 3 0 it is particularly suitable for use in

Contextual Info: MPSA42 NPN HIGH VOLTAGE TRANSISTOR Features • • • KM MH Epitaxial Planar Die Construction 300 Volt Collector-Emitter Voltage Complimentary PNP Type Available MPSA92 TO-92 Dim Mechanical Data_ Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,

pnp 200v

Abstract: mpsa92 MPSA42
Contextual Info: MPSA92 PNP HIGH VOLTAGE SMALL SIGNAL TRANSISTOR Features Epitaxial Planar Die Construction -300V Collector-Emitter Voltage Complimentary NPN Type Available MPSA42 KM TO-92 Mechanical Data_ • • • • • Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,

2N4124

Contextual Info: TRANSYS 2N4124 ELECTRONICS NPN SMALL SIGNAL TRANSISTOR LIMITED Features For General Purpose Switching and Amplifier Applications Especially Suitable for AF Driver and Low Power Output Stages TO-92 Mechanical Data_ Case: TO-92, Plastic Leads: Solderable per MIL STD 202,

Contextual Info: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features KM High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data_ • • • • Case: TO -92, Molded Plastic Leads: Solderable per M IL-STD-202,

MPSA14

Abstract: MPSA13
Contextual Info: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features KM High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram

2N5172

Abstract: DS21602
Contextual Info: 2N5172 NPN SMALL SIGNAL TRANSISTOR Features High Current Gain 600 mW Power Dissipation KM M-H TO-92 Dim Min Max A 4.32 4.83 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Marking: Type Number

BC337

Abstract: DS21610
Contextual Info: BC337 NPN EPITAXIAL PLANAR TRANSISTOR Features Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation T B TO-92 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,

marking EB 202 transistor

Contextual Info: 2N5172 VISHAY NPN SMALL SIGNAL TRANSISTOR /uTE M ir I POWER SEMICONDUCTOR J Features High Current Gain 600 mW Power Dissipation TO-92 Dim Min Max A 4.32 4.83 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram

MPSA42

Abstract: MPSA92
Contextual Info: vShw MPSA42 NPN HIGH VOLTAGE TRANSISTOR y LITEM ZI POW ER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction 300 Volt Collector-Emitter Voltage Complimentary PNP Type Available MPSA92 TO-92 M echanical Data Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,

2N4124

Contextual Info: 2N4124 NPN SMALL SIGNAL TRANSISTOR Features • · For General Purpose Switching and Amplifier Applications Especially Suitable for AF Driver and Low Power Output Stages E A TO-92 B Mechanical Data · · · · C Case: TO-92, Plastic Leads: Solderable per MIL STD 202,

Transistor MPSA13

Abstract: mpsa14
Contextual Info: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features • · · High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages E A TO-92 B Mechanical Data · · · · C Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,

CEN-U45

Contextual Info: Datasheet central Sem icondu ctor Corp. CEN-U45 NPN SILICON DARLINGTON TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-202 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR CEN-U45 type is a NPN Silicon Monolithic Darlington Transistor designed

MPSU10 equivalent

Abstract: MPSU10 MPS-U10 CEN-U10 "Silicon Power Transistor"
Contextual Info: Datasheet CEN-U10 W Q lH a U l Semiconductor Corp. NPN SILICON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-202 CASE (EBC) Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR CEN-U10 type is a NPN Silicon Power Transistor designed for high voltage

MPSA06

Abstract: DA11104 mpsa05 MPS-A06
Contextual Info: MPSA05 / MPSA06 NPN SMALL SIGNAL TRANSISTOR Features • · · Epitaxial Planar Die Construction High Transition Frequency Recommended for Driver and Low-Power Output Stages E A TO-92 B Mechanical Data · · · · · C Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,

Contextual Info: MPSA42 NPN HIGH VOLTAGE TRANSISTOR Features • · · Epitaxial Planar Die Construction 300 Volt Collector-Emitter Voltage Complimentary PNP Type Available MPSA92 E A Mechanical Data · · · · · C Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,

Contextual Info: MPSA05 / MPSA06 NPN SMALL SIGNAL TRANSISTOR Features • · · Epitaxial Planar Die Construction High Transition Frequency Recommended for Driver and Low-Power Output Stages E A TO-92 B Mechanical Data · · · · · C Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,

2n5172

Contextual Info: 2N5172 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • High Current Gain 600 mW Power Dissipation E A TO-92 B Dim Min Max A 4.32 4.83 Mechanical Data • • • • • C Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208