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    TO-204AA TRANSISTOR Search Results

    TO-204AA TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TO-204AA TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Bipolar Darlington Transistors Page 1 of 2 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE (min/max @ A/V) VCE(sat)@ IC/IB (V@A/A) COB pF fT MHZ PNP TO-3/204AA 2N6050 60 12 750/18000@6/3 2.0@6/.024 500 4.0 PNP TO-3/204AA 2N6051 * 80


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    PDF 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6282 2N6283 2N6284 2N6285

    2N3055H

    Abstract: 2N3055H+RCA
    Text: Silicon Power Transistor 2N3055H Technical Data Typical Applications : These devices are designed for general purpose switching and amplifier applications. Specification Fetaures : F Complementary NPN Silicon Power Transistor F 15 Amp / 100 V device in TO-204AA [ TO-3 ] package


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    PDF 2N3055H O-204AA 2N3055H 2N3055H+RCA

    BU208A

    Abstract: No abstract text available
    Text: Silicon Power Transistor BU208A Technical Data Typical Applications : These devices are designed for horizontal deflection output stages of televisions. Specification Fetaures : F Horizontal Deflection NPN Silicon Power Transistor F 5 Amp / 700 V device in TO-204AA [ TO-3 ] package


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    PDF BU208A O-204AA BU208A

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ45A CASE OUTLINE: TO-204AA (TO-3) ENHANCEMENT MODE HIGH VOLTAGE FIELD EFFECT TRANSISTOR


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    PDF O-204AA BUZ45A

    Untitled

    Abstract: No abstract text available
    Text: NPN High Power Silicon Transistors 2N6249, 2N6250, 2N6251 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 • TO-3 TO-204AA Package Maximum Ratings Symbol 2N6249 2N6250 2N6251 Units Collector - Emitter Voltage Ratings VCEO 200 275


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    PDF 2N6249, 2N6250, 2N6251 MIL-PRF-19500/371 O-204AA) 2N6249 2N6250

    power transistor 2n3055

    Abstract: transistor 2N3055 2n3055 circuit 2N3055 TO-3 2N3055
    Text: Silicon Power Transistor 2N3055 Technical Data Typical Applications : These devices are designed for general purpose switching and amplifier applications. Specification Fetaures : F F F F Complementary NPN Silicon Power Transistor 15 Amp / 60 V device in TO-204AA [ TO-3 ] package


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    PDF 2N3055 O-204AA power transistor 2n3055 transistor 2N3055 2n3055 circuit 2N3055 TO-3 2N3055

    Transistor MJ2955

    Abstract: MJ2955 300 watts amplifier MJ2955 TRANSISTOR MJ2955
    Text: Silicon Power Transistor MJ2955 Technical Data Typical Applications : These devices are designed for general purpose switching and amplifier applications. Specification Fetaures : F Complementary PNP Silicon Power Transistor F 15 Amp / 60 V device in TO-204AA [ TO-3 ] package


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    PDF MJ2955 O-204AA Transistor MJ2955 MJ2955 300 watts amplifier MJ2955 TRANSISTOR MJ2955

    MJ11015

    Abstract: No abstract text available
    Text: MJ11015 SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI MJ11015 is a PNP Monolithic Power Darlington Transistor Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3/TO- 204AA MAXIMUM RATINGS IE 30 A VCE -120 V


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    PDF MJ11015 MJ11015 204AA

    2N6251

    Abstract: 2N6250 125Adc 2n6251 application 2N6249
    Text: NPN High Power Silicon Transistors 2N6249, 2N6250, 2N6251 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 • TO-3 TO-204AA Package Maximum Ratings Symbol 2N6249 2N6250 2N6251 Units Collector - Emitter Voltage Ratings VCEO 200 275


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    PDF 2N6249, 2N6250, 2N6251 MIL-PRF-19500/371 O-204AA) 2N6249 2N6250 125Adc 2n6251 application

    Untitled

    Abstract: No abstract text available
    Text: NPN High Power Silicon Transistors 2N6674 & 2N6675 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/537 • TO-3 TO-204AA Package Maximum Ratings Symbol 2N6674 2N6675 Units Collector - Emitter Voltage Ratings VCEO 300 400 Vdc Collector - Base Voltage


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    PDF 2N6674 2N6675 MIL-PRF-19500/537 O-204AA)

    Untitled

    Abstract: No abstract text available
    Text: PD-90330G IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF450 500V ID 0.400Ω 12A The HEXFET ®technology is the key to International


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    PDF PD-90330G O-204AA/AE) IRF450 JANTX2N6770 JANTXV2N6770 IRF450 --TO-204AA

    JANTX2N6770

    Abstract: irf4501 mosfet IRF450 IRF450 JANTXV2N6770
    Text: PD - 90330F IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A The HEXFETtechnology is the key to International


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    PDF 90330F IRF450 JANTX2N6770 JANTXV2N6770 O-204AA/AE) stabil52-7105 JANTX2N6770 irf4501 mosfet IRF450 IRF450 JANTXV2N6770

    mosfet IRF450

    Abstract: IRF450 JANTX2N6770 JANTXV2N6770
    Text: PD-90330G IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF450 500V ID 0.400Ω 12A The HEXFET ®technology is the key to International


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    PDF PD-90330G IRF450 JANTX2N6770 JANTXV2N6770 O-204AA/AE) mosfet IRF450 IRF450 JANTX2N6770 JANTXV2N6770

    Untitled

    Abstract: No abstract text available
    Text: NPN Power Silicon Transistor 2N3055 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/407 • TO-3 TO-204AA Package Maximum Ratings Ratings Symbol Value Units 70 Vdc Collector - Base Voltage VCEO VCBO 100 Vdc Emitter - Base Voltage VEBO


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    PDF 2N3055 MIL-PRF-19500/407 O-204AA)

    2N6676

    Abstract: No abstract text available
    Text: NPN High Power Silicon Transistors 2N6676 & 2N6678 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/538 • TO-3 TO-204AA Package Maximum Ratings Symbol 2N6676 2N6678 Units Collector - Emitter Voltage Ratings VCEO 300 400 Vdc Collector - Base Voltage


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    PDF 2N6676 2N6678 MIL-PRF-19500/538 O-204AA) 2N6676

    Untitled

    Abstract: No abstract text available
    Text: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5875 PNP 2N5877 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS


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    PDF 2N5875 2N5877 O-204AA)

    2n5878

    Abstract: 2N5876
    Text: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5876 PNP 2N5878 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS


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    PDF 2N5876 2N5878 O-204AA) 2N5876 2N5878

    Untitled

    Abstract: No abstract text available
    Text: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5876 PNP 2N5878 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS


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    PDF 2N5876 2N5878 O-204AA) 2N5876

    2n5876

    Abstract: No abstract text available
    Text: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5876 PNP 2N5878 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS


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    PDF 2N5876 2N5878 O-204AA) 2N5876

    Untitled

    Abstract: No abstract text available
    Text: PD - 90330F IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A The HEXFETtechnology is the key to International


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    PDF 90330F IRF450 JANTX2N6770 JANTXV2N6770 O-204AA/AE) temper252-7105

    2N3055

    Abstract: TRANSISTOR 2n3055 2N3055 JAN
    Text: NPN Power Silicon Transistor 2N3055 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/407 • TO-3 TO-204AA Package Maximum Ratings Ratings Symbol Value Units 70 Vdc Collector - Base Voltage VCEO VCBO 100 Vdc Emitter - Base Voltage VEBO


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    PDF 2N3055 MIL-PRF-19500/407 O-204AA) TRANSISTOR 2n3055 2N3055 JAN

    Untitled

    Abstract: No abstract text available
    Text: 2N6285 SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6285 is a PNP Monolithic Power Darlington Transistor Designed for General Purpose Am plifier and Switching Applications. PACKAGE STYLE TO- 3/TO- 204AA Ie 2o A 4o A PEAK < o m MAXIMUM RATINGS


    OCR Scan
    PDF 2N6285 204AA

    MTM2P45

    Abstract: MTM15N50 mtm2n45 MTM2P50 MTM6N90 MTM2N85 MTP3N80 MTM1N100 IRF450 MTM6N60
    Text: POWER TRANSISTORS — TMOS METAL continued li Metal TMOS Product MOSFETs — TQ-204AA TMOS TO-204 (Formerly TO-3) CASE 1-04 and CASE 1-05 3 ‘ Indicates P-C hannel MOTOROLA EUROPEAN MASTER SELECTION GUIDE 3-9


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    PDF O-204 MTM1N100 MTM3N100 MTM5N100 MTM1N95 MTM3N95 MTM5N95 MTM2N90 MTM4N90 MTM6N90 MTM2P45 MTM15N50 mtm2n45 MTM2P50 MTM2N85 MTP3N80 IRF450 MTM6N60

    Untitled

    Abstract: No abstract text available
    Text: m 2N6285 \ \ SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6285 is a PNP Monolithic Power Darlington Transistor Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO-3/TO-204AA U \ -J MAX. I MAXIMUM RATINGS 20 A 40 A PEAK


    OCR Scan
    PDF 2N6285 2N6285 O-3/TO-204AA