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    TO-39 1000 V Search Results

    TO-39 1000 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BCR8FM-20LA#BG0 Renesas Electronics Corporation 1000V - 8A - Triac Medium Power Use Visit Renesas Electronics Corporation
    BCR8FM-20LA#BH0 Renesas Electronics Corporation 1000V - 8A - Triac Medium Power Use Visit Renesas Electronics Corporation
    BCR8FM-20LA#BB0 Renesas Electronics Corporation 1000V - 8A - Triac Medium Power Use, TO-220FP, /Tube Visit Renesas Electronics Corporation
    ADC1038CIWM Rochester Electronics LLC ADC, Successive Approximation, 10-Bit, 1 Func, 8 Channel, Serial Access, PDSO20, SOP-20 Visit Rochester Electronics LLC Buy
    TL505CN Rochester Electronics LLC ADC, Dual-Slope, 10-Bit, 1 Func, 1 Channel, Serial Access, BIMOS, PDIP14, PACKAGE-14 Visit Rochester Electronics LLC Buy
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    TO-39 1000 V Price and Stock

    Essentra Components FTH-39-1-01

    Cable Tie Mount - Maximum Compatible Cable Tie Width 2.5 mm (0.098 in) - UL94 V-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com FTH-39-1-01
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    • 1000 $0.2015
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    TO-39 1000 V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LRMS-2MH+ LRMS-2MH Surface Mount Frequency Mixer Level 13 LO Power +13dBm Maximum Ratings Features Operating Temperature • low conversion loss, 6.72 dB typ. • good L-R isolation, 39 dB typ. -40°C to 85°C Storage Temperature 5 to 1000 MHz -55°C to 100°C


    Original     		PDF 13dBm) 200mW QQQ130 2002/95/EC) DC-1000 Draw10

    TT100

    Abstract: No abstract text available
    Text: Surface Mount RMS-2LH+ RMS-2LH Frequency Mixer Level 10 LO Power +10 dBm 5 to 1000 MHz Maximum Ratings Operating Temperature Storage Temperature Features -40°C to 85°C -55°C to 100°C RF Power 50mW IF Current 40mA • excellent L-R isolation, 39 dB typ.


    Original     		PDF TT100 2002/95/EC) TT100

    Untitled

    Abstract: No abstract text available
    Text: ED IZ GN . L U. E7 39 CO 716 E R #E le Fi TO-220 Isolated A C Rectifiers 15 A to 25 A E7 General Description Teccor manufactures 15 A rms to 25 A rms rectifiers with voltages rated from 200 V to 1000 V. Due to the electrically-isolated TO-220 package, these rectifiers may be used in common anode


    Original     		PDF O-220 O-220

    AN-60-004

    Abstract: No abstract text available
    Text: Self-Cooled VERY HIGH POWER 50W, 20 to 1000MHz up to 50W +47 dBm output FREQ. MHz MODEL NO. LZY-1 LZY-2 e GAIN, dB 20 - 512 500 -1000 39 40 ±1.5 ±1.5 LZY POWER, dBm Flatness Min. Output Min. Max. (1 dB Comp.) fU e +44 +43 Max. Output (Typ.) DYNAMIC


    Original     		PDF 1000MHz BT412 BT451 AN-60-004

    D6015L

    Abstract: No abstract text available
    Text: Se le ct L. U. Pa a ck s* ge ED Z NI G 39 CO 716 E E # R ed E7 le Fi TO-220 Isolated A C Rectifiers 15 A to 25 A E7 General Description Teccor manufactures 15 A rms to 25 A rms rectifiers with voltages rated from 200 V to 1000 V. Due to the electrically-isolated


    Original     		PDF O-220 D6015L

    74286

    Abstract: ade-10h
    Text: Surface Mount ADE-10H+ ADE-10H Frequency Mixer Level 17 LO Power +17dBm 400 to 1000 MHz Features • • • • • low conversion loss, 7.0 dB typ. good L-R isolation, 39 dB typ. excellent solderability low cost protected by U.S. Patent 6,133,525 CASE STYLE: CD542


    Original     		PDF 17dBm) ADE-10H+ ADE-10H CD542 2002/95/EC) ADE-10H( ADE-10H 74286

    Untitled

    Abstract: No abstract text available
    Text: RMS-2MH+ RMS-2MH Surface Mount Frequency Mixer Level 13 LO Power +13 dBm 5 to 1000 MHz Maximum Ratings Operating Temperature Storage Temperature -40°C to 85°C -55°C to 100°C RF Power 50mW IF Current 40mA Pin Connections LO 1 RF 4 IF Features • excellent L-R isolation, 39 dB typ.


    Original     		PDF TT100 2002/95/EC) DC-1000

    24621

    Abstract: No abstract text available
    Text: RMS-2LH+ RMS-2LH Surface Mount Frequency Mixer Level 10 LO Power +10 dBm 5 to 1000 MHz Maximum Ratings Operating Temperature Storage Temperature -40°C to 85°C -55°C to 100°C RF Power 50mW IF Current 40mA Pin Connections LO 1 RF 4 IF Features • excellent L-R isolation, 39 dB typ.


    Original     		PDF TT100 2002/95/EC) M98898 24621

    Untitled

    Abstract: No abstract text available
    Text: RMS-2LH+ RMS-2LH Surface Mount Frequency Mixer Level 10 LO Power +10 dBm 5 to 1000 MHz Maximum Ratings Operating Temperature Storage Temperature -40°C to 85°C -55°C to 100°C RF Power 50mW IF Current 40mA Pin Connections LO 1 RF 4 IF Features • excellent L-R isolation, 39 dB typ.


    Original     		PDF TT100 2002/95/EC)

    Q6016RH4

    Abstract: Q6025L6 alternistor Q6016RH4 equivalent Q6008DH3 q8016rh4 teccor triac application notes THYRISTOR PRODUCT CATALOG Q8016LH4 q8025l6
    Text: * es ag k ac L. U. D ZE NI G 39 CO 716 E R #E d te ec l Se P le Fi *TO-220 *TO-218X *TO-218 TO-252 D-Pak TO-251 V-Pak TO-263 D 2 Pak MT2 MT1 G 6 A to 40 A E4 General Description Teccor offers bidirectional alternistors with current ratings from 6 A to 40 A and voltages from 200 V to 1000 V as part of Teccor's


    Original     		PDF O-220 O-218X O-218 O-252 O-251 O-263 Q6016RH4 Q6025L6 alternistor Q6016RH4 equivalent Q6008DH3 q8016rh4 teccor triac application notes THYRISTOR PRODUCT CATALOG Q8016LH4 q8025l6

    2N5815

    Abstract: 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236 2N4238 2N4314
    Text: Medium Power Amplifiers and Switches H P O L A R IT Y M A X IM U M R A T IN G S C A SE 2N4238 2N4239 2N4314 2N4400 2N4401 2N4402 N N P N N P TO-39 TO-39 TO-39 TO-92A TO-92A TO-92A 1000 1000 1000 5004 5004 500 ♦ 1 1 1 0.6 0.6 0.6 60 80 65 40 40 40 30 30 50


    OCR Scan     		PDF 2N4238 2N4235 2N4239 2N4236 2N4314 2N4400 O-92A 2N4402 2N4401 2N5815 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236

    BCW92 A, B

    Abstract: BC460
    Text: MICRO ELECTRONICS LTD 51E D • ^0^1700 D0G1DÖ3 43S M M E H K Medium Power Amplifiers and Switches I T-27-01 M A X IM U M RATINGS V CE SAT POLARITY FE BC431 BC432 BC440 BC441 BC445 N P N N N TO-92F TO-92F TO-39 TO-39 T 0 -9 2 F 625 625 1000 1000 625 0.8


    OCR Scan     		PDF T-27-01 BC431 BC432 BC440 BC441 BC445 O-92F BCW92 A, B BC460

    BC535

    Abstract: BC682 BC512 BC513 BC526 BC431 BC514 BCW36 BCW37 BCW91
    Text: I Medium Power Amplifiers and Switches M A X IM U M R A T IN G S V C E S A T FE POLARITY H CASE BC431 BC432 BC440 BG441 BC445 N P N N N TO-92F TO-92F TO-39 TO-39 TO-92F 625 625 1000 1000 625 0.8 0.8 1 1 0.3 60 60 40 60 60 63 63 40 40 50 240# 240# 250# 250#


    OCR Scan     		PDF BC431 O-92F BC432 BC432 BC431 BC440 BC460 BG441 BC461 BC535 BC682 BC512 BC513 BC526 BC514 BCW36 BCW37 BCW91

    T4 DIODE

    Abstract: irfag52
    Text: HE 0 I 4âSS4S3 000^2=14 7 | Data Sheet No. PD-9.582A INTERNATIONAL R E C T I F I E R . T-39-13 INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED IRFAG50 HEXFET TRANSISTORS IRFAG5S N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET TO-204AA TO-3 Hermetic Package


    OCR Scan     		PDF T-39-13 IRFAG50 O-204AA G-277 IRFAG50, IRFAG52 0QCH301 G-278 T4 DIODE

    BT412

    Abstract: No abstract text available
    Text: □ M ini-Circuits Self-Cooled j-t. Very H igh P ower sow , 20 to io o o m h z up to 5 0W +47 dBm output FREQ. MHz MODEL NO. NEW NEW POWER, dBm Flatness Min. Output Min, Max. (ld&Comp.) K LZY-1 LZY-2 GAIN, dB 2 0 -5 1 2 500 -1000 39 40 ±1.5 ±1.5 +44 +43


    OCR Scan     		PDF BT412 BT451 BT412

    2N2368

    Abstract: 2N2475 2n2369 2N2476 2N2220 N2904 2N2218 2N2219 2N2221 2N2222
    Text: NPN SW ITCHING - continued Type Max VcEO lc V mA Max VcE sat at V hFE >C mA >B mA Min at Max 'c mA Switching Times (Max) at f j Min at lc MHz mA toff ns ton ns lc Package Comple­ ment mA 30 1000 0 -35 150 15 40 150 50 50 55* 360* 150 TO-39 2N2218 30 800 0 -4


    OCR Scan     		PDF BFY51 2N2218 N2904 2N2219 2N2905 2N2220 2N2221 N2906 2N2222 2N2907 2N2368 2N2475 2n2369 2N2476 N2904

    BCY78

    Abstract: 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177 BCY59 BCY79
    Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BCY78 2N1131 2N1132 2N4037 BC177 BCY79

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    N706A

    Abstract: BC107 N706 N3053 BC178 2N1131 2n3053 2N4037 2N696 2N697
    Text: NPN G EN ER A L P U R P O S E - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO -39 2N4037


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 N706A N706 BC178 2N1131 2n3053 2N4037

    Transistor BC177

    Abstract: BCY42 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177 BCY59
    Text: NPN G EN ER A L P U R P O SE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 Transistor BC177 BCY42 2N1131 2N1132 2N4037 BC177

    N3053

    Abstract: BC107 2N1131 2N1132 2N4037 2N696 2N697 BC177 BCY59 BCY79
    Text: NPN G EN ER A L P U R P O SE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 2N1131 2N1132 2N4037 BC177 BCY79

    2N696

    Abstract: 2n706 BC178 BC107 bc107 complement 2N1131 2N1132 2N4037 2N697 BC177
    Text: NPN G EN ER A L P U R P O S E - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO -39 2N4037


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 2n706 BC178 bc107 complement 2N1131 2N1132 2N4037 BC177

    bcw 94 b

    Abstract: BF-139 F 540 NS BSY54 BCW95B BSY55
    Text: CB 76 (CB 6} (CB 7) Silicon NPN transistors, general purpose (continued) Tamb= 25 °C Transistors N P N silicium , usage générai (suite) (mW) VCEO (V) h21 E VCER* h21E V c E X a min max F 139 Bc F 139 B<> F 139 B TO 18 TO 18 540 540 540 330 330 40 60 60


    OCR Scan     		PDF