TO-5 PACKAGE POWER TRANSISTOR Search Results

pnp hfe 120-240

Abstract: 2SA1217 2SC2877 2SC28
Contextual Info: JMnic Product Specification 2SA1217 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC2877 ・Good linearity of hFE APPLICATIONS ・Audio frequency power amplifier ・Low speed switching ・Suitable for output stage of 5 watts

2sc1098

Abstract: 2SC1098A
Contextual Info: Product Specification www.jmnic.com 2SC1098 2SC1098A Silicon NPN Power Transistors DESCRIPTION ・With TO-202 package ・High Voltage ・High transition frequency APPLICATIONS ・Audio frequency power amplifier ・Low speed switching ・Suitable for output stages of 5~17W small

Contextual Info: NPN Power Silicon Transistor 2N5152, 2N5152L & 2N5154, 2N5154L Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads Si per MIL-PRF-19500/544 • TO-5 Package: 2N5152L, 2N5154L TO-39 (TO-205AD) Package: 2N5152, 2N5154 Maximum Ratings (TC = +25°C unless otherwise noted)

stk 490 110

Abstract: stk 490 310 stk 490 070 4830A k4013 Transistor y2n stk 490 040 stk*470 090 stk 470 070 STK 290 010
Contextual Info: Ordering number : EN4830A Thick Film Hybrid 1C No.4830A S TK 400-020 3-Channel AF Power Amplifier Split Power Supply ( 1 5 W + 1 5 W + 1 5 W min, THD = 0.4 %) Overview Package Dimensions Now, thick-film audio power amplifier ICs are available with pin-com patibility to permit a single PCB to be

ASI3005

Abstract: ASI10540
Contextual Info: ASI3005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 4.5 dB min. at 5 W / 3,000 MHz • Hermetic Microstrip Package

TIP121

Abstract: TIP122 TIP29A TIP29B TIP29C TIP31 TIP31A TIP31B TIP31C TIP41
Contextual Info: TO-220 Power Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) h FE Mn Max 'c80 (MA) Max ^C8 « (V) 5 200 60 1000 1000 0.5 3 3 3 2 4 3 5 200 65 5 200 80 1000 1000 3 0.5 3 3 2 4 3 5 200 5 65

2SK2324

Abstract: TO-220E 2SK1609 2SK1614 2SK2129 220E 2SK1606 2SK1611 2sk2128 2SK2323
Contextual Info: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 TO-220E D59 Relay DC-DC D48 converter D59 Solenoid D63 Control TC)-220F(a)

LND-X-152

Abstract: LAMBDA LND-W-152 lambda LNS-Z-5 LND-P-152 LND-W-152 SPRAGUE 602D Lambda power supply LND-P-152 LNS-p-24 Lambda LNs-x LNS-Y-5
Contextual Info: 5 YEAR GUARANTEED LINEAR Lambda LN series Features—LN series Low-cost 5-year guaranteed power supplies MIL-R-26 type wire-wound resistors 5 package sizes up to 48 V up to 22 amps MIL-W-16878 Wire UL approved Convection Cooled Thermostat— automatically resets when overtemperature

CLASS AB

Abstract: NEL2012F03-24
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR NEL2012F03-24 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: PACKAGE OUTLINE F03 5 W Class A, 16 W Class AB • USEABLE FROM 1.8 TO 2.0 GHz 2.8±0.2 • HIGH LINEAR GAIN:

Contextual Info: BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD540 Series TO-220 PACKAGE TOP VIEW 45 W at 25°C Case Temperature 5 A Continuous Collector Current Up to 120 V VCEO rating This series is obsolete and

Contextual Info: 2N6121 SILICON NPN POWER TRANSISTOR PACKAGE STYLE TO-220AB DESCRIPTION: DIMENSIONS The 2N6121 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. mm MAXIMUM RATINGS 4.0 A lc V 'T 40 W @ T C= 2 5 °C P diss -65 °C t o +150 °C

BUT11

Contextual Info: BUT11 NPN SILICON POWER TRANSISTOR C o p y rig h t 1997, Power Innovations Limited, UK • Rugged Triple-Diffused Planar Construction • 100 W at 25°C Case Temperature • 5 A Continuous Collector Current MAY 1989 - REVISED MARCH 1997 TO -220 PACKAGE TOP VIEW

ASI2223-4

Abstract: ASI10531
Contextual Info: ASI2223-4 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG A The ASI 2223-4 is Designed for General Purpose Clacc C Applications up to 2.3 GHz. .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B ØD C E F FEATURES: G H • Internal Input/Output Matching Networks

ASI4003

Abstract: ASI10543 transistor 4003
Contextual Info: ASI4003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 4003 is Designed for General Purpose Class C Power Amplifier Applications up to 4200 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5 dB min. at 3 W / 4,000 MHz

ASI10541

Abstract: ASI4000
Contextual Info: ASI4000 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 4000 is Designed for General Purpose Class C Power Amplifier Applications up to 4200 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5 dB min. at 0.5 W / 4,000 MHz

ASI3003

Abstract: in 3003 TRANSISTOR ASI10539 transistor m 3003 g
Contextual Info: ASI3003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 3003 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5 dB min. at 3 W / 3,000 MHz

ATR7040

Abstract: ATR7040-PVPG ATR7040-PVQG MO-220
Contextual Info: Features • • • • • • • Frequency Range 5 GHz to 6 GHz Pout 25 dBm at 5.8 GHz Gain Typically 30 dB Pin Typically 0 dBm VCC 2.7V to 3.8V Power Consumption in Power-down Mode Typically < 1 µA Package: QFN16 3 mm x 3 mm 5.8 GHz WDCT Power Amplifier

Contextual Info: NPN Power Silicon Transistor 2N4150 Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads Si per MIL-PRF-19500/394 • TO-5 Package Maximum Ratings Symbol 2N4150 Units Collector - Emitter Voltage Ratings VCEO 70 Vdc Collector - Base Voltage

Analog Devices, branding code D0E

Contextual Info: Data Sheet FEATURES 256-position End-to-end resistance 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ Compact MSOP-10 3 mm x 4.9 mm package Pin selectable SPI/I2C compatible interface Extra package address decode pin AD0 Full read/write of wiper register Power-on preset to midscale

2N1616

Abstract: 60V transistor npn 2a
Contextual Info: 2N1616 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR  1 0 .1 6 (0 .4 0 0 ) 1 7 .2 7 (0 .6 8 0 ) 1 9 .0 5 (0 .7 5 0 ) m in . ! • Bipolar Power Transistor 1 5 .4 2 (0 .6 0 7 ) m a x . • TO–61 Hermetic Package 7 .6 2 (0 .3 0 0 ) 8 .8 9

STV9379

Contextual Info: STV9379 VERTICAL DEFLECTION BOOSTER . . . POWER AMPLIFIER FLYBACK GENERATOR THERMAL PROTECTION OUTPUT CURRENT UP TO 2.0APP FLYBACK VOLTAGE UP TO 90V on Pin 5 SUITABLE FOR DC COUPLING APPLICATION HEPTAWATT (Plastic Package) DESCRIPTION Designed for monitors and high performance TVs,

HF5-12S

Abstract: ASI10591 HF512S
Contextual Info: HF5-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF5-12S is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B • PG = 15 dB min. at 5 W/30 MHz • IMD3 = -30 dBc max. at 5 W PEP

TDA8177F EQUIVALENT

Abstract: TDA8177F tda8177 yoke diagram
Contextual Info: TDA8177F VERTICAL DEFLECTION BOOSTER . . . POWER AMPLIFIER THERMAL PROTECTION OUTPUT CURRENT UP TO 3.0APP FLYBACK VOLTAGE UP TO 70V on Pin 5 SUITABLE FOR DC COUPLING APPLICATION EXTERNAL FLYBACK SUPPLY HEPTAWATT (Plastic Package) DESCRIPTION Designed for monitors and high performance TVs,

ASI10530

Abstract: ASI2010 ASI20
Contextual Info: ASI2010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG A The ASI 2010 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. ØD B .060 x 45° C HA M F E R C E FEATURES: G L • PG = 5 dB min. at 10 W/ 2,000 MHz