TO-92- DATASHEET Search Results

2N5769

Abstract: MPS805 pN2369 national 2N3704 TN67 2n5306 2N4124 NPN 2N3391A 2N5210 national tn3725a
Contextual Info: Discrete POWER & Signal Technologies NPN Saturated Switches Device No. Case Style 2N5769 TO-92 92 PN2369 PN2369A PN4275 PN5134 TN3725A VCES* V VEBO VCBO CEO (V) (V) (V) Min Min Min 40 TO-92 (92) 40 TO-92 (92) 40 TO-92 (92) 40* TO-92 (92) 20* TO-226 (99)

D43C8

Contextual Info: Discrete POWER & Signal Technologies PNP Saturated Switches Device No. 2N5771 PN3640 PN4258 ST5771-1 TN3467A Case Style VCBO VCEO VEBO V Min (V) Min (V) Min TO-92 (92) 15 15 4.5 TO-92 (92) 12 TO-92 (92) 12 TO-92 (92) 15 TO-226 (99) 40 12 12 15 40 4 4.5 4.5

2n3904 TO-92

Contextual Info: Obi h^hOhOO OETTQSI I NPN General Purpose Amplifiers and Switches Device No. Case Style TN2219A TO-226 99 2N3903 2N3904 2N4123 2N4124 MPS6513 MPS6514 MPS6515 VCBO V TO-92 (92) TO-92 (92) CEO VEBO (V) Min (V) Min (V) Min 75 40 6 60 60 TO-92 (92) 40 TO-92

PN4250

Contextual Info: hhE □¿ hO hO Q DETTOSI I . D iscrete POW ER & Sig n a l Technologies National m ^W Sem iconductor'" V Device No. 2N5086 2N5087 Case Style TO-92 92 TO-92 (92) MPS6523 TO-92 (92) PN4249 TO-92 (92) PN4250 PN4250A CBO V CEO V EBO (V) Min (V) Min (V) Min SO

pN5134

Abstract: 2N5769
Contextual Info: NPN Transistors I DETTGÎR t? Semiconductor'“ NPN Saturated Switches 0S9 ¿ShOhOO V CES * Device No. Case Style 2N5769 TO-92 92 PN2369 I PN2369A Discrete POWER & Signal Technologies National vCBO (V) Min 40 TO-92 (92) 40 TO-92 (92) 40 V CEO ^E B O V 'c B O

National 2N3819

Abstract: 2N5248
Contextual Info: Discrete POWER & Signal Technologies National Semiconductorm N-Channel JFETs RF, VHF, UHF Amplifiers B V GSS Device No. C ase Style 2N3819 2N5245 2N5246 2N5247 2N5248 TO-92 TO-92 TO-92 TO-92 TO-92 25 30 30 30 30 1 1 1 1 1 2N5484 2N548S 2N5486 2N5949 2N5950

2N3820 NATIONAL SEMICONDUCTOR

Contextual Info: D iscrete POW ER & Signal Technologies National Semiconductor P-Channel JFETs Switches / Choppers b v gss Device No. Case Style ’ess BVGDo nA @ VD0 (V)@ lG Max (V) Min (fiA) J174 J175 J176 TO-92 TO-92 TO-92 30 30 30 1 1 1 J177 TO-92 30 1 P1086 P1087 TO-92 30

2n3663 national semiconductor

Contextual Info: Discrete POWER & Signal Technologies National Semiconductor" NPN RF Amplifiers and Oscillators V CEO V EBO *CBO Device No. Case Style ^C B O V Min (V) Min (V) Min MPS517 TO-92 (92) 20 12 2.5 2 MPSH10 TO-92 (96) 30 25 3 2N3663 TO-92 (94) 30 12 2N5770 TO-92

national PN2222A

Contextual Info: NPN Transistors NPN General Purpose Amplifiers and Switches V Device No. Case Style CBO V C EO V V Min (V) Min (V) Min Max 10 EBO MPSL01 TO-92 (92) 140 120 6 2N4400 TO-92 (92) 60 40 6 2N4401 TO-92 (92) 60 40 *CBO w (V> h FE @ 'c ft V C E Min Max (mA) 00

Contextual Info: JFETs & Discrete POWER & Signal Technologies National Semiconductor" N-Channel JFETs Low Frequency - Low Noise Amplifiers Device No. PF5101 PF5102 PF5103 PN4393 Case Style TO-92 TO-92 TO-92 TO-92 BVGSS GS off *GSS (V) @ VDS (nA)@ VDG (V) Min Max (V) (nA)

Contextual Info: PNP Transistors * / % D isc re te P O W E R & S ig n a l T e c h n o lo g ie s National Semiconductor" P N P D arlin g to n T ra n s is to rs V CBO vV CES v EBO *CBO Case Style MPSA63 TO-92 92 30 0.1 30 MPSA64 TO-92 (92) 30 0.1 MPSA65 TO-92 (92) 30 0.1 (V)

pf5101

Abstract: PF5301
Contextual Info: JFETs & Discrete POWER & Signal Technologies N a t i on a I Semiconductor N-Channel JFETs Low Frequency - Low Noise Amplifiers Device No. PF5101 PF5102 PF5103 PN4393 Case Style TO-92 TO-92 TO-92 TO-92 NF GS ofl b v gss DSS (V) @ V,DS ( V ) @ lG (nA)@ VTO

LEXX

Contextual Info: LEXX Very low-dropout voltage regulator with inhibit function Datasheet - production data Description 1 TO-92 Bag 2 The LEXX is a very low-dropout voltage regulator available in SO-8, TO-92 packages and over a wide range of output voltages. 3 TO-92 Tape and reel

BC327 NATIONAL SEMICONDUCTOR

Abstract: BC327-16 BC327 BC327-25 BC327A BC328 BC328-25 BC337 BC337-16 BC337-25
Contextual Info: This Pro Electron Series Material ALM 1 /^ Copyrighted Device No. Case Style VCES* V VCBO ^CEO EBO *CBO y V 00 (V) Min Min Max <v> 1 V h. e c & CE Min Max (mA) 00 FE By Its Respective Manufacturer 50* TO-92 (97) 60* TO-92 (97) 50* TO-92 (97) 50* TO-92 (97)

Contextual Info: This PNP Transistors Material Discrete POWER & Signal Technologies National semiconductor I Copyrighted Device No. 2N4402 Case Style TO-92 92 p^p ^CBO ^CEO V EBO (V) (V) Min Min (V) Min 40 40 5 'cBO V CB ("A )@ (v, Max ' ' Its TO-92 (92) 40 40 hFE Min 20

Contextual Info: BC63916 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method BC63916_D74Z BC639-16 TO-92 3L Ammo BC63916_D27Z BC639-16 TO-92 3L

PN4122

Abstract: 2N3905 2N3906 2N4125 2N4126 MPS6518 PN4121 PN4917 2N3906 TO-92
Contextual Info: This PNP Transistors Material PNP General Purpose Amplifiers and Switches continued V Copyrighted Device No. Case Style 2N3905 TO-92 (92) By 2N3906 TO-92 (92) CBO V CEO V (V) Min (V) Min (V) Min 40 40 5 40 40 V CE(SAT) ’c es* EBO 'C B 0 @ V CB (nA) Max

2N4401 NPN Switching Transistor

Abstract: MPSL01 2N4400 2N4401 2N4953 MPS6531 PN2222 PN2222A
Contextual Info: This NPN Transistors Material IT In □ NPN General Purpose Amplifiers and Switches continued t-1 b-1 ÜJ a Device No. Copyrighted CBO CEO (V) (V) (V) Min Min Min TO-92 (92) 140 120 TO-92 (92) 60 Case Style a □ jr a jr cr MPSL01 2N4400 UJ CE(SAT) EBO (nA) @

PN4250

Abstract: 2N5086 MPS6523 MPSH81 PN4249 PN4250A
Contextual Info: This I D" Material In . Discrete POWER & Signal Technologies □ National t-1 Se mi c o n d u c t o r ' “ fc-1 PNP Low Level Amplifiers Lü □ a Copyrighted □ jr □ x: -J V Device No. 2N5086 ru -C By Its Respective ro ho TO-92 92 2NS087 TO-92 (92)

"transistors "

Abstract: National Pn2907 2N4403 NATIONAL SEMICONDUCTOR
Contextual Info: PNP Transistors » /% Discrete POWER & Signal Technologies National U * Device No. 2N4402 2N4403 Semiconductor Case Style TO-92 92 TO-92 (92) VC B O V CEO VE B O (V) Min (V) Min (V) Min 40 40 5 40 40 p N p 'c B O General Purpose Amplifiers and Switches VC E (SA T )

PN3640

Abstract: 2N5771 PN4258 ST5771-1 TN3467A
Contextual Info: This PNP Transistors T Material Ln □ b-1 t- 1 UJ □ Copyrighted □ a -c □ -C tr & Semiconductor" V Device No. Case Style 2N5771 By ru PN3640 Its PN4258 Respective io ro ST5771-1 CBO V CEO V EBO (V Min (V) Min (V) Min TO-92 (92) 15 15 4.5 TO-92 (92)

Contextual Info: PNP Transistors National f i seniconäuc, or- V V Device No. Case Style MPS855 CBO V CEO EBO Discrete POWER & Signal Technologies PNP Medium Power 'cB O V V CE SAT V BE(SAT) h FE (V) Min (V) Min (V) Min TO-92 (92) 40 25 6 MPS6562 TO-92 (92) 25 25 5 100 20

TIS98

Contextual Info: E^hOhOO OETTDiï^ I NPN General Purpose Amplifiers and Switches Device No. PN100 9TT PN100A Case Style TO-92 92 TO-92 (92) V CBO V CEO v EBO (V) Min (V) Min (V) Min 75 45 6 75 45 6 (continued) ICES * ^CBO (nA) Max 50 50 V @ hFE (V) Min 60 80 100 100 100

lm317l

Contextual Info: LM217L, LM317L Low current 1.2 to 37 V adjustable voltage regulators Datasheet - production data Description 1 TO-92 Bag 2 The LM217L/LM317L are monolithic integrated circuits in SO-8 and TO-92 packages intended for use as positive adjustable voltage regulators.