TN67 Search Results

NZT6714

Abstract: TN6714A
Contextual Info: TN6714AI NZT6714 tu D iscrete P O W E R & S ig n a l Technologies National S e m i c o n d u c t o r ' " TN6714A NZT6714 SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A.

NZT6715

Abstract: TN6715A
Contextual Info: TN6715AI NZT6715 & _ D iscrete P O W E R & S ig n a l Technologies National Se m i ro n d u c I o r " TN6715A NZT6715 SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A.

NZT6729

Abstract: TN6729A
Contextual Info: TN6729A / NZT6729 & D iscrete PO W ER & S ig n a l Technologies National Semiconductor" NZT6729 TN6729A SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA.

TN6718A

Contextual Info: TN6718A F A IR C H IL D S E M IC O N D U C T O R tm TN6718A -• ^1^ C B E" TO-226 NPN G eneral P u rp o s e A m p lifie r This device is designed for general purpose medium power amplifiers and switches requiring collector currents to l.O A . Sourced from Process 39. See TN6717A for characteristics.

Contextual Info: TN6714A / NZT6714 TN6714A NZT6714 C E C C B TO-226 B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37. Absolute Maximum Ratings*

PR79

Abstract: NZT6729 TN6729A
Contextual Info: TN6729A NZT6729 C E C C TO-226 B SOT-223 BE PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA. Sourced from Process 79. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: TN6725A C B TO-226 E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: BgMICQNOUCTPR TN6729A NZT6729 SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power am plifiers and switches requiring collector currents to 800 mA. Sourced from Process 79. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted

Contextual Info: Discrete POWER & Signal Technologies § P *|. T m:4T mk 1 &*£.% *• ¥ *w I Ëmæm*& S ^ M lC O N D ilfâ tO ^ TN6715A NZT6715 SOT-223 NPN General Purpose Amplifier This device is designed for general purpose m edium power am plifiers and switches requiring collector currents to 1.2 A.

Contextual Info: TN6729A / NZT6729 TN6729A NZT6729 C C B TO-226 B SOT-223 E C E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA. Sourced from Process 79. Absolute Maximum Ratings*

NZT6715

Abstract: TN6715A
Contextual Info: TN6715A NZT6715 C E C C B TO-226 B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

NZT6714

Abstract: TN6714A
Contextual Info: N TN6714A NZT6714 C E C C B TO-226 SOT-223 BE NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

TN6716A

Abstract: 85u03gh TN6715A
Contextual Info: TN6716A TN6716A CB TO-226 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A. Sourced from Process 38. See TN6715A for characteristics. Absolute Maximum Ratings*

MPSA42

Abstract: TN6719A
Contextual Info: TN6719A C TO-226 BE NPN High Voltage Amplifier This device is designed for use in high voltage applications . Sourced from Process 48. See MPSA42 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units

TN6725A

Abstract: equivalent mpsa14 MPSA14 "Darlington Transistor"
Contextual Info: TN6725A CB TO-226 E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

TN6717A

Abstract: NZT6717
Contextual Info: TN6717AI NZT6717 & D iscrete P O W E R & S ig n a l Technologies National Semiconductor" NZT6717 TN6717A SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A.

m073

Abstract: NZT6728 TN6728A b41 sot223
Contextual Info: TN6728A I NZT6728 & Discrete P O W E R & S ig n a l Technologies National Semiconductor" NZT6728 TN6728A SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A.

TN67

Abstract: 25CC NZT6726 TN6726A
Contextual Info: TN6726A / NZT6726 Discrete P O W ER & S ig n a l Technologies National S e m i c o n d u c t o r ” NZT6726 TN6726A SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A.

Contextual Info: S e M Ü C Q N C ÍiJG T O ^ ^ TN6726A NZT6726 SOT-223 PNP General Purpose Amplifier This device is designed for general purpose m edium power am plifiers and switches requiring collector currents to 1.0 A. Sourced from Process 77. AbSOlUtG Maximum RâtinÇjS

FP6719

Abstract: BX6719 TM6719 TN6719
Contextual Info: Available as: RF AMPLIFIER MODEL TM6719, 4 Pin TO-8 T4 TN6719, 4 Pin Surface Mount (SM3) FP6719, 4 Pin Flatpack (FP4) BX6719,Connectorized Housing (H1) Features Typical Intermodulation Performance at 25 º C • ■ ■ Operating Temp. - 55 ºC to +85 ºC

Contextual Info: TN6727A CB TO-226 E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1A. Sourced from Process 77. See TN6726A for characteristics. Absolute Maximum Ratings* Symbol

Contextual Info: TN6728A / NZT6728 D iscrete P O W E R & S ig n a l T ech n o lo g ies National Semiconductor " TN6728A NZT6728 SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A.

Contextual Info: N P N D a r lin g to n D evice No. Case Style V CBO ^CES V Min (V) M in 30 M PSA 14 T O -9 2 (9 2 ) 30 TN6725A TO-226 (99) 50 2N7052 TO-92 (92) 100 T O -9 2 (9 2 ) 100 2N 7053 (co ntin u e d) 100 100 v VEBO ’ cBO V VCE(SAT) u @ h FE @ V cE (m A ) (V) >C

NZT6726

Abstract: TN6726A
Contextual Info: TN6726A NZT6726 C E C C B TO-226 SOT-223 BE PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 77. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted