TO263AA Search Results

teccor triac application notes

Abstract: alternistor triac 263 d alternistor "application note" TRIAC 226 b triac 101 amps 400v 15A triac triac 216 12 amp triac heat control TRIAC 226 a
Contextual Info: Teccor brand Thyristors 15 Amp Standard & 16 Amp Alternistor High Commutation Triacs Qxx15xx & Qxx16xHx Series Description Standard type devices normally operate in Quadrants I & III triggered from AC line. Alternistor type devices only operate in quadrants I, II, & III

12n60c

Abstract: transistor 12n60c IXGA 12N60C IXGA12N60C IXGP12N60C
Contextual Info: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30

20N100

Contextual Info: IGBT IXGA 20N100 VCES IXGP 20N100 IC25 VCE sat = 1000 V = 40 A = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30

15N12

Abstract: 575 C2
Contextual Info: HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES

Contextual Info: N E W PRODUCT N E W PRODUCT N E W PRODUCT NSB8ATTHRU NSB8MT GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current -8 .0 Amperes TO-263AA FEATURES 0.16 0 4.06 0 .1 9 0 (4 .8 3 ) <• —► 0.04 5 (1.14) 0.0 5 5 (1 .4 0 )

T0.8N100

Contextual Info: □ IXYS Advanced Technical Information IXGA8N100 IXGP 8N100 IGBT V CES = = = ^C25 V CE sat 1000 V 16 A 2.7 V Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE = 1 Mi2 1000 V V GES VGEM Continuous ±20

16N60

Abstract: 16n60 b
Contextual Info: Preliminary Data Sheet IXSA 16N60 IXSP 16N60 Low VCE sat IGBT1 LU ^C 25 V CE(sat)typ Short Circuit SOA Capability Symbol V CES Maximum Ratings Test Conditions v CES Tj = 25°C to 150°C 600 V VcoR T,J = 25°C to 150°C; RG E = 1 MCI 600 V VGES VG E M Continuous

Contextual Info: n i x Y S Preliminary Data Sheet IXGA12N60B IXGP12N60B HiPerFAST IGBT VCES 600 V 24 A 2.1 V 55 ns ^C25 V CE sat typ t Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V vCGR ^ = 25°C to 150°C; RGE = 1 Mi2 600 V Maximum Ratings VGES Continuous ±20

7109E

Abstract: IMP2014 IMP2015 IMP2054 IMP2055 IMP2185 IMP2186 IMP2187 IMP37 SOT-23 marking 016
Contextual Info: POWER MANAGEMENT LDOs IMP37 — Lo w Dr opout Positiv e Volt ag e R egulat or With 800mA Output IMP2014/15, IMP2185 — Super Lo w Dr opout CMOS Regulat or s With Battery Life Extending Shutdown Mode IMP205 4/55, IMP2186 — Super Lo w Dr opout CMOS Regulat or s

FESB8DT

Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT FESB8AT THRU FESB8JT FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 8.0 Amperes TO-263AA FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Glass passivated chip junction

Contextual Info: Advanced Technical Information IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat tfi(typ) =1000 V = 30 A = 3.8 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000

8N100

Contextual Info: IXGA 8N100 IXGP 8N100 IGBT VCES = 1000 V = 16 A IC25 VCE sat = 2.7 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25

Contextual Info: DSP8-08S Standard Rectifier VRRM = 2x 800 V I FAV = 8A VF = 1.08 V Phase leg Part number DSP8-08S Backside: anode/cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

ixtp180n10t

Abstract: IXTA180N10T IXTP*80N10T
Contextual Info: Preliminary Technical Information IXTA180N10T IXTP180N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100

Contextual Info: IGBT Optimized for IXGA 12N120A2 IXGP 12N120A2 VCES = 1200 V IC25 = 24 A VCE sat = 3.0 V switching up to 5KHz Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES

TO263AA

Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT NSB8AT THRU NSB8MT GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 8.0 Amperes TO-263AA FEATURES 0.160 4.06 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) 0.045 (1.14) 0.245 (6.22)

Contextual Info: Teccor brand Thyristors 10 Amp Standard & Alternistor High Communitation Triacs Qxx10xx & Qxx10xHx Series Description Standard type devices normally operate in Quadrants I & III triggered from AC line. Features & Benefits t

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Contextual Info: M30x5S, MB30x5S, MI30x5S www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier FEATURES TO-220AB • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability

IXFP22N60P3

Abstract: IXFA22N60P3 IXFH22N60P3 IXFQ22N60P3 22n60
Contextual Info: IXFA22N60P3 IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3 Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS ID25 = 600V = 22A   390m RDS on TO-220AB (IXFP) TO-263AA (IXFA) G G DS D (Tab) TO-3P (IXFQ)

12N60CD1

Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600

Contextual Info: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C

TO263AA

Abstract: MBRB1035 MBRB1045 MBRB1050 MBRB1060
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT MBRB1035 THRU MBRB1060 SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts Forward Current - 10.0 Amperes TO-263AA FEATURES 0.160 4.06 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) 0.045 (1.14) 0.245 (6.22) MIN 0.055 (1.40)

12n60b

Abstract: 12n60bd1 12N60BD
Contextual Info: IXGA 12N60BD1 IXGP 12N60BD1 HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms

Contextual Info: IGBT IXGA/IXGP12N100U1 IXGA/IXGP12N100AU1 Combi Pack VCES IC25 VCE sat 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V Preliminary Data Sheet TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW