TO92B Search Results

Contextual Info: / o z o Ë I— O LU DESCRIPTION 2N3414 is NPN silicon transistor designed for general purpose AF medium power applications. ~ "j 04.68 (0.18) j" TO-92B T 4.6 (0.18) -• - (0.14) 0.51 12.7 (0.5) min. (0 .02 ) Bottom view Unit: mm(inch) ii ABSOLUTE MAXIMUM RATINGS

TO-92B

Abstract: 2SA0720 2SC1318
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1318 • Package  Complementary pair with 2SC1318 

IC tl 072

Abstract: 2SD0965 2SD965
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0965 (2SD965) Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope Unit: mm 4.0±0.2 0.7±0.2 • Low collector-emitter saturation voltage VCE(sat)

2SA1123

Abstract: 2SC2631
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 0.7±0.2 • Satisfactory forward current transfer ratio hFE collector current IC

BFQ58

Abstract: BFQ57 BFT99 RF Bipolar Transistors BFT97 BFP194 BF840 BFT65 BFR34A BF450
Contextual Info: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors N=NPN P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ57 BFQ58 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73 BFQ73S

BC363

Abstract: BC387 BC514 BC682 bc431n BC512 BC526 bc535 BC388 BC427
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE HFE MAXIMUM RATINGS VCEO Pd IC mW (A) (V) min max IC (mA) VCE (V) VCE(sat) max (V) (A) IT min (MHz) Cob COMPLE­ max MENTARY TYPE (PF) 2.5 100 100 100 100 5 1 1 10 10 0.25 0.5 0.5 0.25 0.25 0.05

BC148

Abstract: BC148 hfe maximum BC186 BC181 BC147 BC157 BC190 BC206 BC149 bc182l
Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY CASE M AXIM UM RATINGS Pd IC VCEO mW (mA) (V) HFE min V CE(sat) max IT Cob N.F. IC VCE max IC m in max max (mA) (V) (V) (mA) (M Hz) (MHz) (dB) 5 5 5 5 5 0.6 0.6 0.6 0.6 0.35 100 100 100 50 1 150

TRANSISTOR BC 208

Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
Contextual Info: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2

BFW45

Abstract: BFR59 BFS89 BFS90 BFS91 BFT47 BFT48 BFT49 BFT57 BFT58
Contextual Info: High Voltage Transistors TYPE NO. 101 POLA­ RITY CASE MAXIMUM RATINGS VCEO IC Pd ICM* VCER* mA (mW) (V) VCE(sat) HFE min max IC (mA) VCE (V) m ai (V) IC (mA) fr min (MHz) Cob Cre* max (MHz) BFR59 BFS89 BFS90 BFS91 BFT47 N N P P N TO-39 TO-39 TO-39 TO-39

MPS9631

Abstract: T1S91 MPS9632 MPS9630 TIS92 MPS9633 SE4010 TIS61 MPS9600 MPS9634
Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY MPS9600 MPS9601 MPS9602 MPS9630 MPS9631 N N N N N CASE TO-92A TO-92A TO-92A TO-92A TO-92A VCE sat HFE MAXIMUM RATINGS Pd IC VCEO (mW) (mA) (V) min max 300 300 300 350 350 100 100 100 100 100 12

BF117

Abstract: BF294 BF178 BF299 BC236 BF174 BF298 BC312 BF120 BF137
Contextual Info: High Voltage Transistors TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd VCEO IC ICM* VCER* min mai mW (mA) (V) VCE(sat) IC (mA) VCE max (V) (V) IC (mA) fT min (MHz) Cob Cre* max (MHz) BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18 TO-18

transistor NEC K2500

Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Contextual Info: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC1222

Abstract: TO-92B 2SC1000 2SC1330 2SC923 2SC1328 2SC1327 2SC1213A 2SC1675 2SC858
Contextual Info: NO. UJ Li. X TYPE P O LA R ITY Low Level and General Purpose Amplifiers MAXIMUM RATINGS CASE Pd mW 'c (mA) V CEO (V) V CE(SAT) 'c min max (mA) VCE (V) max 'c (V) (mA) Cob N.F. max max (MHz) (pF) (dB) 4 20 15 10 fT min 2SC858 2SC900 2SC923 2SC945 2SC1000

2SD1616A

Abstract: transistor 468
Contextual Info: ELECTRONICS MICRO DESCRIPTION 2SD1616A is NPN silicon planar transistor designed for use in driver and output stages of AF amplifier, general purpose application. 2SD1616A NPN SILICON TRANSISTOR 4.68 0.18 TO-92B 4.6 (0.18) 12.7 (0.5) min. 3.58 B CE (0.14)

2SA564A-P

Abstract: 2SA640 2SA564 TO-92B 2SC537 2SC644 2SA876H 2N5138 2SA1715 2SC372
Contextual Info: TYPE NO. H M A X IM U M R A TIN G S CASE Pd mW 'c Im A) V CEO (V) min FE V CE(SAT) max •c lm A | V CE (V) max (V) 'c Im A I fT min (MHz) Cob N.F. max max (pF) (dB) _ 2N5138 2N 5172 2N5209 2N5210 2N5219 P IM N N N TO -IO 6 TO-92B T O -92A TO-92A TO -92A

SE4010

Abstract: 2N3565 TIS92 2N3692 TIS90 2N2924 PN3565 PN3566 PN3694 PN4249
Contextual Info: TYPE NO. P O L A R IT Y Low Level and General Purpose Amplifiers CASE M A X IM U M R A T IN G S Pd mW 'c (m A | V CE(SAT) h fe V CEO (V) min max 'c (m A) V CE (V) max (V) 'c (m A ) fT m in (MHz) Cob N.F. max max (pF) (dB) PN3565 PN3566 PN3694 PN4249 PN4250

2N4033

Abstract: 2N3702 2N3794 2N4235 2N3107 2N3115 2N3073 2N3081 2N3108 2N3109
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. >- C A SE a < _i o CL M AXIM UM R A T IN G S Pd mW •c H V C E (S A T ) FE 'c (A ) V C EO (V ) min max max 'c f T min Cob C O M PLE­ max M EN TA RY TYPE (m A | V CE (V ) (V ) (A ) (MHz) (pF) 2N3073 2N3081 2N3107

BC286

Abstract: BC287 BC340 BC231 BC138 BC232 BC211 BC388 BC311 BC223
Contextual Info: Medium Power Amplifiers and Switches H P O L A R IT Y M A X IM U M R A T IN G S CASE BC119 BC138 BC139 BC140 BC141 N N P N N TO-39 TO-39 TO-39 TO-39 TO-39 800 800 700 800 800 1 1 0.5 1 1 1 30 30 40 40 60 40 35 40 40 40 BC142 BC143 BC144 BC160 BC161 N P N P

2N5815

Abstract: 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236 2N4238 2N4314
Contextual Info: Medium Power Amplifiers and Switches H P O L A R IT Y M A X IM U M R A T IN G S C A SE 2N4238 2N4239 2N4314 2N4400 2N4401 2N4402 N N P N N P TO-39 TO-39 TO-39 TO-92A TO-92A TO-92A 1000 1000 1000 5004 5004 500 ♦ 1 1 1 0.6 0.6 0.6 60 80 65 40 40 40 30 30 50

2SC1012

Abstract: 2sc1279 2SA675 2SC1012A 2SA685 2SC1103 2SC505 2SA637 2SA639 2SA749
Contextual Info: M A X IM U M R A T IN G S V CEO 'c m * Im A I V CER * V 300 200 250 300 250 50 50 100 50 50 150* 180 80» 150» 100 30 30 50 30 50 Pd (mW) 'c min max (m A) m 'c Cob V C E(SA T) h fe fT min Cre • (mA) (MHz) (pF) max ’c (V) max I NO. CASE < o< TYPE P O L A R IT Y

2N5816

Abstract: 2N5815 2N5225 2N5143 2N5447 2N4969 2N5226 2N5450 2N5818 2N5819
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd IC VCEO mW (A) (V) min max IC (mA) VCE (V) VCE(sat) max (V) (A) IT min (MHz) Cob COM PLE­ max MENTARY TYPE (PF) 2N4953 2N4954 2N4969 2N4970 2N4971 N N N N P TO-92B TO-92B

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1018 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • High collector-emitter voltage (Base open) VCEO

Contextual Info: Transistors 2SC2671F Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2 M Di ain sc te on na tin nc ue e/ d • Low noise figure NF • High maximum unilateral power gain GUM • High transition frequency fT