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    TO99 MOSFET Search Results

    TO99 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    TO99 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3609

    Abstract: 2N4120 2N4067 2N5548 diode 600m nec 500t 3sj11a 3n156 3N155 to99 mosfet
    Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (S) Max (V) elN Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style P-Chann I Enhanc ment-Typ , (Cont'd) 5 10 15 20 25 30 TP0102N3 TPOS02N3


    Original     		PDF TP0102N3 TPOS02N3 TP0102N2 TP0602N2 2N3609 MFE823 2N4352 3N208 2N4120 2N4067 2N5548 diode 600m nec 500t 3sj11a 3n156 3N155 to99 mosfet

    TO99 package

    Abstract: ICL7667MJA/883B macy1-x8 ICL7667 CDIP2-T8 ICL7667MJA
    Text: SCOPE: DUAL-POWER MOSFET DRIVER Device Type 01 Generic Number ICL7667M x /883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter TV JA Mil-Std-1835 MACY1-X8 GDIP1-T8 or CDIP2-T8 Case Outline Package Code


    Original     		PDF ICL7667M /883B Mil-Std-1835 Mil-Std-1835 Mil-Std-883: Mil-Std-883. Mil-Std-883 ICL7667Mxx/883B TO99 package ICL7667MJA/883B macy1-x8 ICL7667 CDIP2-T8 ICL7667MJA

    5962-8766001PA

    Abstract: No abstract text available
    Text: SCOPE: DUAL-POWER MOSFET DRIVER Device Type 01 Generic Number ICL7667M x /883B SMD Number 5962-87660 Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter SMD MAXIM G TV P JA Mil-Std-1835 MACY1-X8 GDIP1-T8 or CDIP2-T8


    Original     		PDF ICL7667M /883B Mil-Std-1835 Mil-Std-1835 Mil-Std-883: Mil-Std-883. Mil-Std-883 ICL7667Mxx/883B 5962-8766001PA

    5962-8766001GC

    Abstract: No abstract text available
    Text: SCOPE: DUAL-POWER MOSFET DRIVER Device Type 01 Generic Number ICL7667M x /883B SMD Number 5962-87660 Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter SMD MAXIM G TV P JA Mil-Std-1835 MACY1-X8 GDIP1-T8 or CDIP2-T8


    Original     		PDF ICL7667M /883B Mil-Std-1835 Mil-Std-883: Mil-Std-883. Mil-Std-883 ICL7667Mxx/883B 5962-8766001GC

    3N165

    Abstract: 3N166 3N170 X3N165-66
    Text: Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier LLC 3N165 / 3N166 FEATURES ABSOLUTE MAXIMUM RATINGS Note 1 (TA = 25oC unless otherwise specified) • Very High Impedance • High Gate Breakdown • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 2)


    Original     		PDF 3N165 3N166 3N165. 3N166. 100MHz 3N165 -55oC 3N170 300ms. DS018 3N166 X3N165-66

    3N166

    Abstract: 3N165 3N170 73Package
    Text: Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION 3N165 / 3N166 FEATURES ABSOLUTE MAXIMUM RATINGS Note 1 (TA = 25oC unless otherwise specified) • Very High Impedance • High Gate Breakdown • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 2)


    Original     		PDF 3N165 3N166 3N165. 3N166. -10mA, 100MHz 3N165 -55oC 3N170 3N166 73Package

    3N190

    Abstract: 3N190-91 3N191 X3N190-91
    Text: Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier LLC 3N190 / 3N191 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1)


    Original     		PDF 3N190 3N191 3N190-3N191 3N190, -65oC 200oC -55oage -55oC 125oC 3N190-91 3N191 X3N190-91

    3N190

    Abstract: 3N188 3N190-91 3N191 X3N190-91 C2506
    Text: Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION 3N190 / 3N191 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1)


    Original     		PDF 3N190 3N191 3N190-3N191 3N190, -65oC 200oC -55oC 125oC 3N188 3N190-91 3N191 X3N190-91 C2506

    MAX8211

    Abstract: MAX8212 Programmable Voltage MAX8211CPA MAX8211CSA MAX8211CTY MAX8211CUA MAX8211EPA MAX8211ESA ICL8212s
    Text: 19-0539; Rev 4; 9/02 Microprocessor Voltage Monitors with Programmable Voltage Detection _Features ♦ µP Power-Fail Warning ♦ Improved 2nd Source for ICL8211/ICL8212 ♦ Low-Power CMOS Design _Applications


    Original     		PDF ICL8211/ICL8212 MAX8211) MAX8212) MAX8211CPA MAX8211CSA MAX8211CUA MAX8211CTY MAX8211EPA MAX8211ESA MAX8211Eage MAX8211 MAX8212 Programmable Voltage MAX8211CPA MAX8211CSA MAX8211CTY MAX8211CUA MAX8211EPA MAX8211ESA ICL8212s

    MAX8211

    Abstract: MAX8212 MAX8211MSA max8212cpa MAX8211CPA MAX8211CSA MAX8211CTY MAX8211CUA MAX8211EPA MAX8211ESA
    Text: 19-0539; Rev 5; 9/08 Microprocessor Voltage Monitors with Programmable Voltage Detection _Features Maxim’s MAX8211 and MAX8212 are CMOS micropower voltage detectors that warn microprocessors µPs of power failures. Each contains a comparator, a 1.5V


    Original     		PDF MAX8211 MAX8212 MAX8211/MAX8212 MAX8211MSA max8212cpa MAX8211CPA MAX8211CSA MAX8211CTY MAX8211CUA MAX8211EPA MAX8211ESA

    MAX8211

    Abstract: MAX8212 icl8212 Programmable Voltage ICL8211 MAX8211CPA MAX8211CSA MAX8211CTY MAX8211CUA MAX8211EPA
    Text: 19-0539; Rev 3; 1/95 Microprocessor Voltage Monitors with Programmable Voltage Detection _Features ♦ µP Power-Fail Warning _Applications µP Voltage Monitoring Undervoltage Detection Overvoltage Detection


    Original     		PDF ICL8211/ICL8212 MAX8211) MAX8212) MAX8211CPA MAX8211CSA MAX8211CUA MAX8211CTY MAX8211EPA MAX8211ESA MAX8211EJA MAX8211 MAX8212 icl8212 Programmable Voltage ICL8211 MAX8211CPA MAX8211CSA MAX8211CTY MAX8211CUA MAX8211EPA

    MAX8212

    Abstract: MAX8211 MAX8211CUA MAX8211EPA MAX8211ESA MAX8211CPA MAX8211CSA MAX8211CTY
    Text: 19-0539; Rev 3; 1/95 Microprocessor Voltage Monitors with Programmable Voltage Detection _Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ _Applications µP Voltage Monitoring Undervoltage Detection Overvoltage Detection


    Original     		PDF ICL8211/ICL8212 MAX8211) MAX8212) MAX8211CPA MAX8211CSA MAX8211CUA MAX8211CTY MAX8211EPA MAX8211ESA MAX821ILLIMETERS MAX8212 MAX8211 MAX8211CUA MAX8211EPA MAX8211ESA MAX8211CPA MAX8211CSA MAX8211CTY

    MAX8212

    Abstract: MAX8211
    Text: 19-0539; Rev 4; 9/02 Microprocessor Voltage Monitors with Programmable Voltage Detection _Features ♦ µP Power-Fail Warning ♦ Improved 2nd Source for ICL8211/ICL8212 ♦ Low-Power CMOS Design _Applications


    Original     		PDF MAX8211 MAX8212 MAX8212, 21-0036J MAX8212ESA-T MAX8212CUA MAX8212CUA-T MAX8212CUA+

    MAX8212

    Abstract: MAX8211 Programmable Voltage microprocessor 8212 block diagram ICL8211
    Text: 19-0539; Rev 4; 9/02 Microprocessor Voltage Monitors with Programmable Voltage Detection _Features ♦ µP Power-Fail Warning ♦ Improved 2nd Source for ICL8211/ICL8212 ♦ Low-Power CMOS Design _Applications


    Original     		PDF MAX8211 MAX8212 MAX8212, volt12ESA+ MAX8212ESA MAX8212ESA MAX8212ESA-T MAX8212C Programmable Voltage microprocessor 8212 block diagram ICL8211

    2N4044

    Abstract: 2N4045 2N4100 2N4878 3N165 3N166 3N188 3N189 3N190 3N191
    Text: 1. DISCRETES Differential Amplifiers — Dual Monolithic P-Channel MOSFETS Enhancement Ordering Information Preferred P irt Number V osi th) min/max V Package BVd s s min/max ta s s max •g s s max V PA PA Vg S 1-2 max r C)S(on) max !) talon) min/max mA


    OCR Scan     		PDF 3N165 T0-99 3N166 3N188 3N189 3N190 2N4044 2N4045 2N4100 2N4878 3N191

    3N188

    Abstract: X3N189 3N189 3N190 3N191 X3N188 X3N190 X3N191
    Text: CA LO GI C CORP 4ÖE ]> lflMM3E2 0 0 G 0 3 S M 3 • C G C h 3N188-3N191 Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N188-3N191 'T Z 't- 'Z n FEATURES • • • • A B S O L U T E MAXIMUM RATING S T a - 25°C unless otherwise specified


    OCR Scan     		PDF 00G03SM 3N188-3N191 3N188, 3N189 3N190, 3N191 10sec) -500nA, -500pA -500HA, 3N188 X3N189 3N189 3N190 3N191 X3N188 X3N190 X3N191

    3N190

    Abstract: TO-99 3N165 3N166 3N191 ITC5911 ITC5912
    Text: HARRIS SEMICOND SECTOR 4 3 0 2 2 7 1 0 0 1 5 7 G 3 .4 27 E D IHAS -3/-Z Differential Amplifiers Continued 5 V'T-Z7-Z£ Junction FETs — N-Channel (Continued) PART NUMBER ITC5911 ITC5912 Vqs1-2 aVGS mV MV/°C PACKAGE Max Max TO-99 TO-99 10 15 20 40 •g


    OCR Scan     		PDF G01S7G3 ITC5911 ITC5912 10kHz 3N165 3N190 TO-99 3N166 3N191

    Untitled

    Abstract: No abstract text available
    Text: Œ\ ICL7667 HARRIS S E M I C O N D U C T O R Dual Power MOSFET Driver May 1992 Features Description • Fast Rise and Fall Times - 30ns with 1000pF Load The ICL7667 is a dual monolithic high-speed driver designed to convert TTL level signals into high current


    OCR Scan     		PDF ICL7667 1000pF ICL7667 ICL7667â

    MAX722

    Abstract: MAX717 MAX753 MAX714
    Text: POWER MANAGEMENT I BATTERY CHARGERS MULTI-FUNCTION SUPPLIES * MAX712 NiCd/NiMH, zero voltage-slope detection f t MAX713 (NiCd/NiMH, negative voltage-slope detection) LOW-SIDE MOSFET DRIVERS M AX626 (2A, 4Q, dual inverting) MAX613 MAX627 (2A, 4 ft, dual noninverting)


    OCR Scan     		PDF MAX613 MAX614 MAX620 MAX712 MAX713 AX626 MAX627 MAX628 MAX621 MAX622 MAX722 MAX717 MAX753 MAX714

    Untitled

    Abstract: No abstract text available
    Text: CALOGIC CORP MAE J> 1Ö4M322 00003SM 3 • C G C vJ 3N188-3N181 'T Z FEATURES • • • • l- 'Z I ABSOLUTE MAXIMUM RATINGS Ta - 25°C unless otherwise specified Very High Input Impedance High Gate Breakdown 3N190-3N191 Zener Protected Gate 3N188-3N189


    OCR Scan     		PDF 4M322 00003SM 3N188-3N181 3N190-3N191 3N188-3N189 3N188, 3N189 3N190, 3N191 -500nA,

    L7667

    Abstract: CL7667 ICL7667
    Text: E G E SOLID STATE Gl 38 750 8 1 G E S O L ID DE'| 3075001 DDlOSba 0 STATE 01E 10562 D T - S l - i Z - W ñ ICL7667 «I Dual Power MOSFET Driver Cl 01 »1 GENERAL DESCRIPTION FEATURES The ICL7667 is a dual monolithic high-speed driver de­ signed to convert T T L level signals into high current outputs


    OCR Scan     		PDF ICL7667 ICL7667 L7667 CL7667

    IC 8212 internal block diagram

    Abstract: L8211 AX8212 MAX8212 MAX8211 8212 functional block diagram
    Text: JVKÆXAJVK 79 0539; Rev 3; 1/95 M icroprocessor Voltage M onitors w ith Program m able Voltage D etectio n The MAX8211 provides a 7mA current-limited output sink whenever the voltage applied to the threshold pin is less than the 1.5V internal reference. In the MAX8212, a voltage


    OCR Scan     		PDF MAX8211 MAX8212 IC 8212 internal block diagram L8211 AX8212 8212 functional block diagram

    ICL7667

    Abstract: No abstract text available
    Text: ICL7667 fil HARRIS S E M I C O N D U C T O R Dual Power MOSFET Driver May 1992 Description Features • Fast Rise and Fall Times - 30ns with lOOOpF Load The ICL7667 is a dual monolithic high-speed driver designed to convert TTL level signals into high current


    OCR Scan     		PDF ICL7667 ICL7667 ICL7667â 250kHz

    AX8211

    Abstract: l8211 f 8212
    Text: 19-0539; Rev 3; 1/95 y k i> J X i> M M icroprocessor Voltage M onitors w ith Program m able Voltage D etectio n D e s c rip tio n The MAX8211 provides a 7mA current-limited output sink whenever the voltage applied to the threshold pin is less than the 1.5V internal reference. In the MAX8212, a voltage


    OCR Scan     		PDF MAX8211 MAX8212 AX8211 l8211 f 8212