X3N190 Search Results

X3N190 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
X3N190		Calogic	40 V, dual P-Channel enhancement mode MOSFET general purpose amplifier		Original	PDF
X3N190		Calogic	Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier		Scan	PDF
X3N190-91		Calogic	Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier		Original	PDF

X3N190 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
3N190 Abstract: 3N190-91 3N191 X3N190-91 Text: Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier LLC 3N190 / 3N191 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1)	Original	PDF	3N190 3N191 3N190-3N191 3N190, -65oC 200oC -55oage -55oC 125oC 3N190-91 3N191 X3N190-91
3N190 Abstract: 3N188 3N190-91 3N191 X3N190-91 C2506 Text: Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION 3N190 / 3N191 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1)	Original	PDF	3N190 3N191 3N190-3N191 3N190, -65oC 200oC -55oC 125oC 3N188 3N190-91 3N191 X3N190-91 C2506
3N188 Abstract: X3N189 3N189 3N190 3N191 X3N188 X3N190 X3N191 Text: CA LO GI C CORP 4ÖE ]> lflMM3E2 0 0 G 0 3 S M 3 • C G C h 3N188-3N191 Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N188-3N191 'T Z 't- 'Z n FEATURES • • • • A B S O L U T E MAXIMUM RATING S T a - 25°C unless otherwise specified	OCR Scan	PDF	00G03SM 3N188-3N191 3N188, 3N189 3N190, 3N191 10sec) -500nA, -500pA -500HA, 3N188 X3N189 3N189 3N190 3N191 X3N188 X3N190 X3N191
3N190 Abstract: No abstract text available Text: Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CO RP O RA TIO N 3N190/3N191 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1)	OCR Scan	PDF	3N190/3N191 3N190-3N191 3N190, -500HA, 300ns; 3N190
3N188 Abstract: No abstract text available Text: _\| _ COIOOIC Dual P-Channel Enhancement Mode MOSFET . _ - _ _ CORPORATION 3N190/3N191 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1)	OCR Scan	PDF	3N190/3N191 3N190-3N191 3N190, -500nA, -500mA 3N188
Untitled Abstract: No abstract text available Text: CALOGIC CORP MAE J> 1Ö4M322 00003SM 3 • C G C vJ 3N188-3N181 'T Z FEATURES • • • • l- 'Z I ABSOLUTE MAXIMUM RATINGS Ta - 25°C unless otherwise specified Very High Input Impedance High Gate Breakdown 3N190-3N191 Zener Protected Gate 3N188-3N189	OCR Scan	PDF	4M322 00003SM 3N188-3N181 3N190-3N191 3N188-3N189 3N188, 3N189 3N190, 3N191 -500nA,