TOHO Search Results

SKY67012-396LF

Contextual Info: DATA SHEET SKY67012-396LF: 300-600 MHz Low-Noise, Low-Current Amplifier Applications • ISM, CDMA, TETRA, RFID, mobile broadcast, automobile-tohome control systems, Medical Micro-Power Networks • General purpose LNAs Features • Low NF: 0.85 dB @ 450 MHz

elna capacitor SILMIC II

Abstract: ELNA Electrolytic capacitor SILMIC II elna lp5 Series elna LA5 ELNA FOR AUDIO 100uF 25V Electrolytic Capacitor ELNA RCR-2367C elna cerafine ELNA EDLC JIS B 0211
Contextual Info: Certifications of Quality Management System as of Jun. 2008 Factory Applicable Standard Certification Number Item Applicable Organization ELNA CO., LTD. SHIRAKAWA Tech. (Japan) ELNA TOHOKU CO., LTD. AOMORI Factory (Japan) ISO 9001 JAB JP10/062036 UAKS JP05/060268

SKY67015-396LF

Contextual Info: PRELIMINARY DATA SHEET SKY67015-396LF: 30-400 MHz Low-Noise, Low-Current Amplifier Applications • ISM, CDMA, TETRA, RFID, mobile broadcast, automobile-tohome control systems, Medical Micro-Power Networks • General purpose LNAs Features • Low NF: 0.8 dB @ 250 MHz

iwaki resistor

Abstract: LP5 ELNA elna lp5 Series elna LA5 elna lp5 RJ5 ELNA Resistors iwaki power sense elna 63v 10000 elna capacitor SILMIC elna cerafine
Contextual Info: Certifications of Quality Management System as of Jun. 2008 Factory Applicable Standard Certification Number Item Applicable Organization ELNA CO., LTD. SHIRAKAWA Tech. (Japan) ELNA TOHOKU CO., LTD. AOMORI Factory (Japan) ISO 9001 SGS/J/Q 1327 Aluminum electrolytic capacitors

SP2539

Abstract: SP2539-2 SP2539-5
Contextual Info: C l V >A V SP2539 O I ^U W A CofpC tohonV SIGNAL PROCESSING EXCELLENCE VERY HIGH SLEW RATE WIDEBAND OPERATIONAL AMPLIFIERS FEATURES • Very High Slew Rate ■ Open Loop Gain ■ Wide Gain-Bandwidth ■ Power Bandwidth ■ Low Offset Voltage ■ Input Voltage Noise

SIT Static Induction Transistor

Abstract: 2SK180 thf-51 tokin sit transistor 2SK182E PLL for induction heating sit transistor 2SK183VE 2SK183 2SK182
Contextual Info: Another Tokin exclusive. Static Induction Ibansisiors SIT Static Induction Transistor w as in v e n te d by Professor Jun-ichi N ishizawa of Tohoku U niversity in 1950. After several s u b s e q u e n t technological d e v e lo p ­ m e n ts a n d im p ro v e m e n ts, it w a s first utilized in 1979 as a n industrial p o w e r SIT.

Contextual Info: TELEDYNE COMPONENTS 3bE » • fl^lTbOE 0007bSG 3 TSC ~ rn z - p S WTELEDYNE COMPONENTS 4860 FAST, 12-BIT SAMPLE/HOLD AMPLIFIER FEATURES GENERAL DESCRIPTION ■ The 4860 is a very fast, high-resolution sample/hold (track/hold amplifier. Its acquisition time and sample-tohold settling time (a S/H's two throughput limiting specifi­

Contextual Info: PRELIMINARY DATA SHEET SKY67015-396LF: 30-400 MHz Low-Noise, Low-Current Amplifier Applications • ISM, CDMA, TETRA, RFID, mobile broadcast, automobile-tohome control systems, Medical Micro-Power Networks • General purpose LNAs Features • Low NF: 0.85 dB @ 200 MHz

Contextual Info: DATA SHEET SKY67012-396LF: 300-600 MHz Low-Noise, Low-Current Amplifier Applications • ISM, CDMA, TETRA, RFID, mobile broadcast, automobile-tohome control systems, Medical Micro-Power Networks • General purpose LNAs Features • Low NF: 0.85 dB @ 450 MHz

smd diode J476

Abstract: 10 35L W1 RJ3 Elna smd 3528 led strip elna cerafine 10 micro farad 25 v electrolytic capacitor Elna ce 85 smd C475 ST T4 3570 431 SY4
Contextual Info: Certifications of Quality Management System as of Jun. 2006 Applicable Standard Certification Number Item Applicable Organization ELNA CO., LTD. SHIRAKAWA Tech. (Japan) ELNA TOHOKU CO., LTD. AOMORI Factory (Japan) ISO 9001 JP05/60268QA Aluminum electrolytic capacitors

elna capacitor SILMIC II

Abstract: elna silmic Elna LP5 LP5 ELNA ELNA 25v 47uf RVS HUmiseal 1A27NS RJ4 Elna ELNA EDLC ELNA Electrolytic capacitor SILMIC II rvt SMD Electrolytic CAPACITORS
Contextual Info: Certifications of Quality Management System as of Jun. 2008 Factory Applicable Standard Certification Number Item Applicable Organization ELNA CO., LTD. SHIRAKAWA Tech. (Japan) ELNA TOHOKU CO., LTD. AOMORI Factory (Japan) ISO 9001 JAB JP10/062036 UAKS JP05/060268

Toho

Abstract: GM71V18163C
Contextual Info: GM71V18163C GM71VS18163CL LG Semicon Co.,Ltd. 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71V S 18163C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM71V(S)18163C/CL has realized higher density, higher performance and various

AS7C331MNTD32A

Abstract: AS7C331MPFD32A AS7C332MPFD18A AS7C332MPFS18A
Contextual Info: November 2004 AS7C331MNTD32A AS7C331MNTD36A 3.3V 1M x 32/36 Pipelined SRAM with NTDTM Features • Organization: 1,048,576 words × 32 or 36 bits • NTD architecture for efficient bus operation • Fast clock speeds to 200 MHz • Fast clock to data access: 3.2/3.5/3.8 ns

LH75401

Abstract: LH75401N0Q100C0 LH75411 LH75411N0Q100C0 LQFP144
Contextual Info: LH75401/LH75411 System-on-Chip Preliminary data sheet DESCRIPTION • JTAG Debug Interface and Boundary Scan The NXP BlueStreak LH75401/LH75411 family consists of two low-cost 16/32-bit System-on-Chip SoC devices. • Single 3.3 V Supply • LH75401 — contains the superset of features.

Tag 225 600 replacement

Abstract: 80C51 C251 TSC80251 TSC80251G1D TSC83251G1D TSC87251G1A
Contextual Info: TSC80251G1D Extended 8–bit Microcontroller with Serial Communication Interfaces 1. Description The TSC80251G1D products are derivatives of the TEMIC Microcontroller family based on the extended 8–bit C251 Architecture. This family of products is tailored to 8–bit microcontroller applications requiring

M82C51A-2

Abstract: m80c88a-2 m82c51 M81C55 80C88A m80c88a M80C88A-10 m81c55-5 msm80c88a2 MSM80C85AH
Contextual Info: E2O0011-27-X2 This version: Jan. 1998 MSM80C88A-10RS/GS/JS Previous version: Aug. 1996 ¡ Semiconductor MSM80C88A-10RS/GS/JS ¡ Semiconductor 8-Bit CMOS MICROPROCESSOR GENERAL DESCRIPTION The MSM80C88A-10 is internal 16-bit CPUs with 8-bit interface implemented in Silicon Gate

8286/8287

Abstract: microprocessor 8286 timing diagram of 8286 microprocessor 8286 8286 transceiver ic 8287 8086 logic diagram 8086 microprocessor block diagrammed with direction 8088 microprocessor block diagrammed with direction 82878
Contextual Info: 1 8 2 8 6 /8 2 8 7 00 S Octal Bus Transceivers DISTINCTIVE CHARACTERISTICS Data bus buffe r/d river for 8086, 8088, 8080A, 8085A, and 8048 processors Fully parallel 8-bit transceivers: 8 2 8 6 is n o n in v e rtin g 8287 is inverting 3-state inp u ts/ou tp u ts for interfacing with bus-oriented

8087 architecture and configuration

Abstract: 8087 coprocessor architecture black diagram of ic 8086 1QS01 8087 data types
Contextual Info: 8087 Numeric Data Coprocessor ¡APX86 Family DISTINCTIVE CHARACTERISTICS • • • High performance arithmetic and transcendental func­ tions in hardware Supports 8-, 16-, 32-, 64-bit integer Performs 32-, 64-, 80-bit floating point calculations conforming to IEEE standard

8086 minimum mode and maximum mode

Abstract: timing diagram of 8086 maximum mode 8086 microprocessor architecture diagram timing diagram of 8086 minimum mode max and min mode 8086 8086 microprocessor APPLICATIONS block and pin diagram of 8086 addressing modes 8086 8086 minimum mode 8086 microprocessor pin diagram
Contextual Info: 8086 16-Bit Microprocessor ¡APX86 Family MILITARY INFORMATION 8086 DISTINCTIVE CHARACTERISTICS • • • • • Directly addresses up to 1 Mbyte of memory 24 operand addressing modes Efficient implementation of high-level languages Instruction set compatible with 8080 software

d8264

Contextual Info: 8284A/8284A-1 8284A /8284A-1 Clock Generator and Driver for 8086, 8088 Processors DISTINCTIVE CHARACTERISTICS • • • Generates the System Clock for the 8086, 8088 Proces­ sors: 5MHz, 8 MHz with 8284A; 10MHz with 8284A-1 Uses a crystal or a TTL signal for frequency source

BU 808 DX

Abstract: til 808 segment RT 8284 N 8088H
Contextual Info: 8088 8-Bit Microprocessor CPU ¡APX86 Family FINAL DISTINCTIVE CHARACTERISTICS • • • 8 • • Byte, w ord, and block o p e ratio ns 24 o pe ran d add ressing m odes P ow erful in struction set E fficie nt high level la nguage im plem e nta tion T hree speed options; 5M H z 8088

Contextual Info: IB M 1 1 M 4 6 4 0 C IB M 1 1 M 4 6 4 0 C B 4M X 64 DRAM MODULE • Au contacts • Optimized for byte-write non-parity applications Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - • 4Mx64 Fast Page Mode DIMM

Contextual Info: IBM11M32730B IBM11M32730C 32M x 72 DRAM MODULE Features • 32Mx72 Dual Bank Fast Page Mode DIMM System Performance Benefits: -Buffered inputs (except RAS, Data) -Reduced noise (32 Vss/Vcc Pir|s) -4 Byte Interleave enabled -Buffered PDs • Performance:

Contextual Info: IBM11M2730H 2M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module Optimized for ECC applications System Performance Benefits: • 2Mx72 Fast Page Mode DIMM - Buffered inputs except RAS, Data - Reduced noise (32 Vss/Vcc Pins)