2SK183 Search Results

Contextual Info: SILICON N CHANNEL MOS TYPE 2SK1830 HIGH SPEED SW ITCHING APPLICATIONS. A N A L O G SWITCH APPLICATIONS. • 2.5 V olts G ate D rive. • Low Threshold V oltage : V th = 0 .5 ~ 1 .5 V . H igh Speed • Enhancem ent-M ode • S m a ll P ackage MARKING KI M A X IM U M RATINGS Ta = 25°C

2SJ347

Abstract: 2SK1830
Contextual Info: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5 to −1.5 V • High speed • Small package • Complementary to 2SK1830 Marking

k1832

Abstract: K1831 2SK1157 2SK1158 2SK1831 2SK1832
Contextual Info: 2SK1831, 2SK1832 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 2

TOP-220

Abstract: TOP220 top 220 2SK1834 2SK183
Contextual Info: Power F-MOS FETs 2SK1834 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 25ns ● No secondary breakdown 16.7±0.3 4.2±0.2 2.7±0.2 φ3.1±0.1 4.0

Contextual Info: 2SK1836, 2SK1837 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter

Hitachi DSA002748

Contextual Info: 2SK1831, 2SK1832 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline

Hitachi DSA002748

Contextual Info: 2SK1835 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • High breakdown voltage VDSS = 1500V High speed switching Low drive current No secondary breakdown Suitable for switching regulator Outline and Equivalent Circuit

2SJ347

Abstract: 2SK1830
Contextual Info: TO SH IBA 2SJ347 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2SJ347 Unit in mm ANAROG SWITCH APPLICATIONS • Low Threshold Voltage : V t h = —0.5 ~ —1.5V • High Speed • Small Package • Complementary to 2SK1830

2SJ347

Abstract: 2SK1830
Contextual Info: TOSHIBA 2SJ347 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ347 HIGH SPEED SWITCHING APPLICATIONS Unit in mm ANAROG SWITCH APPLICATIONS • Low Threshold Voltage : V ^ ——0.5~ —1.5V • High Speed • Small Package • Complementary to 2SK1830

TOP-220

Abstract: top 220 2SK1834 2sk18 TOP220
Contextual Info: Power F-MOS FETs 2SK1834 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 25ns ● No secondary breakdown 16.7±0.3 7.5±0.2 4.0 14.0±0.5 Symbol

Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5~1.5 V • High speed • Enhancement-mode • Small package Marking

2SK1835

Contextual Info: 2SK1835 Silicon N Channel MOS FET REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Application High speed power switching Features • • • • • High breakdown voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator

2SK1830

Abstract: HN7G02FU RN2110
Contextual Info: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent

2SJ347

Abstract: 2SK1830 Toshiba 2SJ
Contextual Info: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V • High speed • Small package • Complementary to 2SK1830 Marking Unit: mm

2SK2829

Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
Contextual Info: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586

2SK1835

Abstract: 2SK1835-E PRSS0004ZE-A SC-65
Contextual Info: 2SK1835 Silicon N Channel MOS FET REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Application High speed power switching Features • • • • • High breakdown voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator

2SA1955

Abstract: 2SK1830 HN7G01FU 2SK1830 MOSFET
Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)

HN7G01FU

Abstract: 2SA1955 2SK1830 Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA
Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent · Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)

Contextual Info: TOSHIBA 2SK1830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K18 3 0 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS • 2.5V Gate Drive • Low Threshold Voltage : V£h = 0.5~1.5V • High Speed • Enhanncement-Mode • Small Package

2824R

Abstract: 2SK1839 EN4634 sanyo OIS
Contextual Info: Ordering num ber: EN4634 2SK1839 No.4634 SANYO i N -Channel E nhancem ent MOS Silicon FET Analog Switch Applications F e a tu re s • Very small-sized package perm itting 2SK1839-applied sets to be made sm all and slim. • Large I Yfs I • Enhancem ent type.

Contextual Info: Transistors IC SMD Type Type SMD Product specification 2SK1838S TO-252 Features Low on-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Suitable for switchingregulator, DC-DC converter +0.1 0.60-0.1 2.3 +0.15 5.55-0.15

Contextual Info: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5 to 1.5 V • High speed • Enhancement-mode • Small package

8150 diode

Abstract: Hitachi DSA002779
Contextual Info: 2SK1836, 2SK1837 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PL D