TOP MARKING S1 Search Results

LM309K

Abstract: nsc marking QML MARKING DETAILS 40 lead ceramic flatpack ALPHA YEAR DATE CODE 5962-9553601QPA LM7171AMJ-QML top marking codes CERAMIC FLATPACK ALPHA YEAR CODE
Contextual Info: N Top Marking Information for Mil/Aero Products TOP MARK INFORMATION Not all marks shown may appear on parts 883 883&&38510 38510Date DateCode Code 2nd Last 2nddigit: digit: Lastdigit digitof ofthe theyear yearwafer wafersort sortwas wasperformed. performed.

marking s11

Contextual Info: Multilayer Chip Balun CHM1608U-F 積層チップバラン Series TYPE CHM1608U-F Series 1.6±0.15 3 2 0.3±0.1 1 MARKING 0.8±0.1 0.8±0.1 4 5 6 0.55 0.25 TOP VIEW SIDE VIEW ③ ④ NC IN ② GND ① OUT1 ⑤ GND ⑥ OUT2 Unit: mm • Marking of polarity : marking is on the upper Surface of

2012U

Abstract: marking s11
Contextual Info: Multilayer Chip Balun CHM2012U-F 積層チップバラン Series TYPE CHM2012U-F Series 2.0±0.15 3 2 0.3±0.15 1 MARKING 1.0Max. 1.25±0.15 4 5 SIDE VIEW TOP VIEW ③ ④ 0.65 0.35 6 NC IN ② GND ① OUT1 ⑤ GND ⑥ OUT2 Unit: mm • Marking of polarity : marking is on the upper surface of the

marking s11

Contextual Info: Multilayer Chip Balun CHM1608U-F 積層チップバラン Series TYPE CHM1608U-F Series 1.6±0.15 3 2 0.3±0.1 1 MARKING 0.8±0.1 0.8±0.1 4 5 6 0.55 0.25 TOP VIEW SIDE VIEW ③ ④ NC IN ② GND ① OUT1 ⑤ GND ⑥ OUT2 Unit: mm • Marking of polarity : marking is on the upper Surface of

Contextual Info: TOSHIBA TA4008F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4008F 1.6GHz BAND BUFFER AMPLIFIER APPLICATION FEATURES • Low current Ice =9mA Typ. • Recommended operating voltage PIN ASSIGNMENT (TOP VIEW) IN GND V c c = 2 .7 - 3 .3V MARKING

smd transistor A7

Abstract: smd transistor marking A14 smd a7 5962-8866204xx smd marking A8 smd transistor a4 SMD a7 Transistor Transistors Diodes smd e2 smd transistor marking A3 smd transistor A8
Contextual Info: SRAM MT5C2568 Austin Semiconductor, Inc. 32K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 28-PIN SOJ (DCJ) 28-Pin DIP (C, CW) FEATURES OPTIONS MARKING • Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2

IC 7107

Abstract: 5252 F 1006 C 5763 transistor PT 4962 marking 5241 CRE 6203 ECSP1006-3 EC3H10B current 5241 10419
Contextual Info: Ordering number : ENN7324 EC3H10B NPN Epitaxial Planar Silicon Transistor EC3H10B UHF to S Band Low-Noise Amplifier and OSC Applications Features 1 3 2 0.15 1 1.0 0.05 0.25 Top View 0.05 • [EC3H10B] Bottom View 0.5 0.65 • unit : mm 2183A Marking 2 0.05

GPI048

Abstract: upd3 PD30111
Contextual Info: ¿¿PD30111 NEC 23. ELECTRICAL SPECIFICATIONS This section shows the electrical specifications of versions 1.1 and 2.0 of the V r41 11. The revision is identified by the marking in the top of the package. 23.1 Version 1.1 Absolute Maximum Ratings T a = 25°C

smd marking "d3"

Abstract: SMD MARKING A13
Contextual Info: SRAM MT5C2568 Austin Semiconductor, Inc. 32K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 28-PIN SOJ (ECJ) 28-Pin DIP (C, CW) FEATURES OPTIONS MARKING • Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2

Contextual Info: SRAM MT5C2568 Austin Semiconductor, Inc. 32K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 28-PIN SOJ (DCJ) 28-Pin DIP (C, CW) FEATURES OPTIONS MARKING • Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2

256k x 8 dram

Abstract: SIMM 30-pin
Contextual Info: MT2D2568 256K X 8 DRAM M ODULE [MICRON DRAM . . 256K x 8 DRAM _ FAST PAGE MODE MT2D2568 LOW POWER, EXTENDED REFRESH (MT2D2568 L) M O DULE IV IV L fU I-L . FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access

UVA photodiode

Abstract: SFH291 SFH 291 UV diode 250 nm
Contextual Info: SIEMENS SFH 291 SILICON PHOTODIODE HIGH UV SENSITIVITY Package Dimensions in Inches mm FEATURES Maximum Ratings * Anode Marking: Tab at Package Bottom Operating and Storage Temperature Range (TOP, Tgtg) .- 40° to +80”C Soldering Temperature (2 mm from case bottom) (Ta,tS3 s . .230°C

LTF3216L

Abstract: 16L-HR4G LT3216 toko ltf marking
Contextual Info: TYPE LTF Frequency Range: 800-2500MHz Input Marking I GND r IN i GND J _ OUT TOP VIEW SIDE VIEW Features • • • • • • • Miniature footprint: 3.2 x 1.6mm 1206 Low profile (1,4mm) Carrier frequency range: 800MHz ~ 2.6GHz Suitable for flow and reflow soldering

C10-A10FX

Abstract: C12-A21BX 220v ac voltage stabilizer circuit C12-A21FX C10-A10BX solid state 220v ac stabilizer 220V AC Automatic Voltage stabilizer transistor A1232 releco relay 24v dc 10a C12-A21X
Contextual Info: IRC Interface and general application The new IRC relays Button and lockable lever push-to-test, lift-to-lock Mechanical and LED indication as standard Coil voltage marked on the top of the relay Marking label Optional in-built suppressors circuits and bridge rectifier for AC/DC relays

5962-8868101LA

Abstract: 5962-8868102LA 64K X 4 SRAM 5962-8868103LA
Contextual Info: SRAM MT5C2564 Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-88681 • MIL-STD-883 24-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access

SCP1000-D11

Abstract: SCP1000 D01 SCP1000 SCP1000-D01 TN51 2716 eeprom
Contextual Info: Doc.Nr. 8260800.08 Product Family Specification SCP1000 Series Absolute pressure sensor SCP1000-D01 SCP1000-D11 SCP1000 Series Note: Reader is advised to notice that this Product Family Specification applies to SCP1000 having updated signal conditioning circuitry. This version can be recognized from the D01 or D11 marking on the top of the

dh 321

Abstract: SMD a7 S smd a10 SMD a7 Transistor smd diode marking a6 smd marking A8 MT5C2565 mt5c2565 883
Contextual Info: SRAM MT5C2565 Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-89524 • MIL-STD-883 28-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access

43211

Abstract: MT5C2565 smd a10 SMD a7 Transistor smd marking A8 5962-8952403XX A12 smd MT5C256
Contextual Info: SRAM MT5C2565 Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-89524 • MIL-STD-883 28-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access

Contextual Info: PRELIMINARY |W|IC=RC3N 512K M T4C 8 512/3 L WIDE DRAM X 8 512K x 8 DRAM WIDE DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View OPTIONS 28-Pin ZIP (DB-3) 28-Pin SOJ (DC-4) MARKING • Timing 60ns access 70ns access 80ns access • MASKED WRITE

MT5C2565EC-25

Contextual Info: SRAM MT5C2565 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-89524 • MIL-STD-883 28-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access

smd 5 pin marking a9

Contextual Info: SRAM MT5C2565 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-89524 • MIL-STD-883 28-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access

MT1805

Contextual Info: M IC R O N 512K DRAM MODULE 512K X X MT18D51236 36 DRAM MODULE 36 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT (Top View OPTIONS 72-Pin SIMM (T-12) MT18D51236M/G MARKING • T im ing 60ns access 70ns access 80ns access P ackages L ead less 7 2 -p in SIM M

Contextual Info: EN25LF40 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

cFeon

Contextual Info: EN25LF10 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the