TOSHIBA GT20D101 Search Results

TOSHIBA GT20D101 Result Highlights (5)

Part	Manufacturer	Description
TB6586BFG	Toshiba Electronic Devices & Storage Corporation	Brushless Motor Driver/3 Phases Controller/Vout(V)=18/Square Wave
TC78B006AFNG	Toshiba Electronic Devices & Storage Corporation	Brushless Motor Driver/1 Phase Pre Driver/Vout(V)=40/Square, Sine Wave
TB62216FTG	Toshiba Electronic Devices & Storage Corporation	Brushed Motor Driver/2ch/Vout(V)=40/Iout(A)=2.5
TB6613FTG	Toshiba Electronic Devices & Storage Corporation	Brushed Motor Driver/8ch/Vout(V)=6/Iout(A)=0.8
TB67H303HG	Toshiba Electronic Devices & Storage Corporation	Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=10

TOSHIBA GT20D101 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GT20D201 Abstract: toshiba gt20d201 GT20 GT20D101 Contextual Info: TOSHIBA GT20D201 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 HIGH PO W ER AM PLIFIER APPLICATION Unit in mm • High Breakdown Voltage • High Forward Transfer Admittance : \|Yfe\| = 10S Typ. • Complementary to GT20D101 •	OCR Scan	GT20D201 -250V GT20D101 961001EAA2' GT20D201 toshiba gt20d201 GT20 GT20D101	PDF
Contextual Info: TOSHIBA GT20D201 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION • • • • High Breakdown Voltage : VCES= —250V Min. High Forward Transfer Admittance : \|Yfe\| = 10S (Typ.) Complementary to GT20D101	OCR Scan	GT20D201 GT20D101	PDF
toshiba gt20d101 Abstract: GT20D101 GT20D201 Contextual Info: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH POWER AMPLIFIER APPLICATION 20.5MAX • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : \|Yfe\| = 10S(Typ.)	OCR Scan	GT20D101 GT20D201 toshiba gt20d101 GT20D101 GT20D201	PDF
Toshiba gt20d101 Abstract: GT20D101 GT20D201 Contextual Info: GT20D101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION 20.5MAX • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : \|Yfe\| = 10S(Typ.)	OCR Scan	GT20D101 GT20D201 961001EAA2' Toshiba gt20d101 GT20D101 GT20D201	PDF
toshiba gt20d101 Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL G T 2 0 D 1 01 DATA SILICON N CHANNEL TYPE GT20D101 Unit in mm HIGH POWER AMPLIFIER APPLICATION. 20.5MAX • • • • High Breakdown Voltage : VCES —250V (Min.) High Forward Transfer Admittance : \|Yfe\|= 10S(Typ.)	OCR Scan	GT20D101) --250V GT20D201 GT20D101 toshiba gt20d101	PDF
TOSH18A Contextual Info: GT20D101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 HIGH POWER AM PLIFIER APPLICATION • • • • H igh Breakdown Voltage : V cE S —250V Min.; H igh Forward Transfer Adm ittance : \|Yfe\|= 10S(Typ. Complementary to GT20D201	OCR Scan	GT20D101 --250V GT20D201 TOSH18A	PDF
Contextual Info: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH POWER AMPLIFIER APPLICATION 0d.S±O.2 2 0.5M A X • High Breakdown Voltage : V C E S ~ 250V Min. • High Forward Transfer Admittance : \|Yfe\| = 10S(Typ.)	OCR Scan	GT20D101 GT20D201	PDF
Contextual Info: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION 03.3±O .2 2 0.5M A X • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : \|Yfe \| = 10S(Typ.)	OCR Scan	GT20D101 GT20D201	PDF
Contextual Info: 45E D • TDT7E50 0017fl4fl I T OSM T TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N C H A N N EL T Y P E TOSHIBA T DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 03 : V c e s =250V (MIN.) 3 ±0.2 . High Forward Transfer Admittance : \| Yfe \| =10S (TYP.)	OCR Scan	TDT7E50 0017fl4fl GT20D101 GT20D201 DD17ASD	PDF
toshiba gt20d201 Abstract: GT20D201 Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL GT20D201 DATA SILICON P CHANNEL TYPE GT20D201 Unit in mm HIGH POWER AMPLIFIER APPLICATION. • • • • High Breakdown Voltage : VGEg = —250V (MIN.) High Forward Transfer Admittance : \|Yfe\| = 10S (TYP.)	OCR Scan	GT20D201) GT20D201 --250V GT20D101 GT20D201 toshiba gt20d201	PDF
GT20D101 Abstract: toshiba gt20d101 toshiba gt20d201 GT20D201 a 3050 c Contextual Info: TOSHIBA GT20D201 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • • 2 0.5 MAX. , & 3.3 ±0.2 High Breakdown Voltage : VCES~ —250V Min. High Forward Transfer Admittance : \|Yfe\| = 10S (Typ.)	OCR Scan	GT20D201 -250V GT20D101 GT20D101 toshiba gt20d101 toshiba gt20d201 GT20D201 a 3050 c	PDF
Contextual Info: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR f ' W i • u n mmr r m n SILICON N CHANNEL TYPE w m ■ Unit in mm HIGH POWER AMPLIFIER APPLICATION 2 0.5 M AX • • • • 0 3 .3 ± O .2 High Breakdown Voltage : V c e £>= 250V Min. High Forward Transfer Admittance : \|Y fe\|= 10S(Typ.)	OCR Scan	GT20D101 GT20D201 F001EAA2'	PDF
Contextual Info: 45E D • T0T72SG 0017ÔS1 T ■ T0S4 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D201 SILICON P CHANNEL TYPE TOSHIBA DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 0 3 .3 ± 0.2 20 5 MAX : VcES=-250V (MIN.) . High Forward Transfer Admittance : \| Yfe I =10S (TYP.)	OCR Scan	T0T72SG GT20D201 -250V GT20D101 0017SSB GT2QD201	PDF
GT20D101 Abstract: GT20D201 pc180 Contextual Info: 45E D • TCH7250 0017ÔS1 TOSM T ■ TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR - GT20D201 SILICON P CHANNEL TYPE TOSHIBA D IS C R E T E / O P T O HIGH POWER AMPLIFIER APPLICATION Unit in mm V c ES=-250V (MIN.) . High Forward Transfer Admittance I Yfe I =10S (TYP.)	OCR Scan	TDT72S0 0017AS1 GT20D101 -250V GT20D201 T-39-31 GT20D101 GT20D201 pc180	PDF

G50Q2YS40 Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js Contextual Info: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101	OCR Scan	GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js	PDF
Toshiba gt20d101 Contextual Info: 45E D • TCH7250 0017ÔS1 T ■ TOSHIBA IN S U LA T ED G ATE B IP O LA R T R A N S IS TO R TOS M - SILICO N P C H A N N E L T Y P E TOSHIBA GT20D201 DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm V c ES=-250V (MIN.) . High Forward Transfer Admittance	OCR Scan	GT20D101 -250V GT20D201 T-39-31 Toshiba gt20d101	PDF
transistor d 4515 Abstract: Transistor 4515 2-21F1C GT20D101 Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage ¿3.3 ¿0.2 20.5MAX : Vc e s =250V MIN. . High Forward Transfer Admittance : \| Yfe \| =10S (TYP.) . Complementary to GT20D201	OCR Scan	GT20D101 GT20D201 2-21F1C transistor d 4515 Transistor 4515 2-21F1C GT20D101	PDF
IGBT gt20d201 Abstract: p channel igbt GT20D201 Contextual Info: GT20D201 TO SH IBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL IGBT GT20D201 HIGH POWER AMPLIFIER APPLICATION Unit in mm 20.5M AX. • High Breakdown Voltage • High Forward Transfer Admittance : \|Yfe\| = 10S Typ. • Complementary to GT20D101	OCR Scan	GT20D201 --250V GT20D101 IGBT gt20d201 p channel igbt GT20D201	PDF
T20D201 Abstract: gt20d201 Contextual Info: TOSHIBA GT20D201 Insulated Gate Bipolar Transistor U nit in m m Silicon P Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - VCES = -250V Min • High Forward Transfer Admittance - Yfs' = 10S (Typ.) • Complementary to GT20D101	OCR Scan	GT20D201 -250V GT20D101 T20D201 T20D201 gt20d201	PDF
GT20D201 Abstract: GT20D101 10S0V Contextual Info: TOSHIBA GT20D101 insulated Gate Bipolar Transistor Unit in mm Silicon N Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - v c e s = 2 5 0 V M in • High Forward Transfer Admittance - Yfs = 10S0VP-) • Complementary to GT20D201	OCR Scan	GT20D101 10S0VP-) GT20D201 GT20D201 GT20D101 10S0V	PDF
Contextual Info: TO SH IBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 2 0 D 1 01 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : \|Yfe\|= 10S(Typ.) Complementary to GT20D201	OCR Scan	GT20D101 GT20D201	PDF
gt20d201 Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE P T ^ n n ^ fM GT20D201 HIGH POWER AMPLIFIER APPLICATION Unit in mm [Si : VcES=~250V MIN. . Complementary to GT20D101 ) oin esi < <1 1 2.5 3.0 + 2.5 1.0-0.25 MAXIMUM RATINGS (Ta=25°C) 5 .4 5 ± 0 .1 5	OCR Scan	GT20D201 GT20D101 gt20d201	PDF
J3302 Contextual Info: GT20D201 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION • • • • High Breakdown Voltage : VCES= —250V Min. High Forward Transfer Admittance : \|Yfe\| = 10S (Typ.)	OCR Scan	GT20D201 --250V GT20D101 J3302	PDF
GT200101 Abstract: GT20D101 GT20D201 toshiba gt20d101 TOS-M Contextual Info: 45E D m TOSM T 0 T 7 5 5 G 0017äMfl T TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE TOSH IB A D I S C R E T E / O P T O HIGH POWER AMPLIFIER APPLICATION Unit in mm 0 3 3 ± 0 .2 . High Breakdown Voltage v CES=25° v . High Forward Transfer Admittance	OCR Scan	1CH755G GT20D101 GT20D201 T-39-31 GT200101 GT20D101 GT20D201 toshiba gt20d101 TOS-M	PDF

TOSHIBA GT20D101 Search Results

TOSHIBA GT20D101 Result Highlights (5)

TOSHIBA GT20D101 Datasheets Context Search

GT20D201

toshiba gt20d101

Toshiba gt20d101

toshiba gt20d101

TOSH18A

toshiba gt20d201

GT20D101

GT20D101

G50Q2YS40

Toshiba gt20d101

transistor d 4515

IGBT gt20d201

T20D201

GT20D201

gt20d201

J3302

GT200101