TR 2N3055 Search Results

RCA 40251

Abstract: rca 2n6254 2N3055H RCA 40251 2N3055H 2N6254 2N6253 2n6254 rca 2N6371 S 40251
Contextual Info: SEMELAB UIIHB POWER TR A N S ISTO R S 2N3055H, 2 N 6 2 5 3 , 2N 6254, 2N6371, 40251 H o m e ta x ia l-B a s e High-Power Silicon N -P -N Transistors • 2 N 6 2 5 4 : prem ium type fro m 2 N 3 0 5 5H Rugged, Broadly Applicable Devices For Industrial and Commercial Use

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

2N3065

Abstract: MJ16015 mj15015 MJ15016 2N3055A 2N3065A 3055A 2N3055* motorola
Contextual Info: D FJt.3t.7SS4 n O T O R O L A SC -CXSTRS/R F> 6367254 MOTOROLA, SC XSTRS/R D 96D 8 0 2 7 5 F DDflOaTS T r i ^ b L ~ r ~ 3 3 - s ^ MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA NPN PNP 2N3055A MJ15015 MJ2955A MJ15016 C O M P L E M E N T A R Y S IL IC O N HIGH-POW ER TR A N SISTO R S

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

N3055

Abstract: ZDT30 2N3440 2N3055 2N3439 ZT1480 ZT1482 ZT1484 ZT1486 ZT1488
Contextual Info: S ILIC O N TR A N SISTO R S High Voltage n-p-n The transistors listed in the table below have maximum coliector-emitter voltage ratings of 100 volts or higher and may therefore be used in applications where high voltages are encountered. Further information on these transistors can be found on the page indicated in the last column of the table, or on request from Ferranti Ltd.

2n3054

Abstract: RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147
Contextual Info: jo is is u e jj. J 9 M O d .1 1 - <r*#► • 1 - t * « 1 I -tr 14 p i-er 2 1 his edition of the P o w e r T r a n s is to r D ir e c ­ to r y has been completely revised to reflect new An important change in this Directory is in the Index of Types which has been expanded to include

MJ15016

Abstract: 2n3055a MJ15015 2N3055 NPN Transistor
Contextual Info: ON Semiconductort NPN 2N3055A Complementary Silicon High−Power Transistors MJ15015 * PNP MJ15016 * . . . PowerBaset complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or

2N3055

Abstract: NPN Transistor 2N3055 darlington 2N6576 2N6577 2N6578
Contextual Info: 2H6576 2H6577 2N6578 I NPN SILICON POWER DARLINGTON General-purpose EpiBase for linear and switching Replacement for 2N3055 Popular Voltage transistors, suitable and Driver Performance Diode Protection Can Be Driven from Operating darl ington applications.

2N3055* motorola

Abstract: mj15016 motorola 2n3055 motorola 1N6073 2N3055 2N3055A MJ15015 MJ15016 MJ2955 MJ2955A
Contextual Info: MOTOROLA Order this document by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon High-Power Transistors 2N3055A MJ15015* . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power

mj15015g

Contextual Info: 2N3055AG NPN , MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or

2N3055

Abstract: MJ2955 mj15015 MJ15016 MJ2955 mexico 1N6073 2N3055A MJ2955A
Contextual Info: ON Semiconductort NPN 2N3055A Complementary Silicon High-Power Transistors MJ15015 * . . . PowerBaset complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or

1N6073

Abstract: 2N3055 2N3055A MJ15015 MJ15016 2N3055A-D 2N30
Contextual Info: ON Semiconductort NPN 2N3055A Complementary Silicon High-Power Transistors MJ15015 * PNP MJ15016 * . . . PowerBaset complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or

MJ15015

Abstract: 2n3055a datasheet 2n3055AG MJ15016 MJ15015 TRANSISTOR MJ15015G MJ15015 application note 1N6073 2N3055 2N3055AG
Contextual Info: 2N3055A NPN , MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These

MJ15015

Abstract: 2N3055A MJ15016 MJ15015G MJ15015 application note 2N3055AG MJ15016G 1N6073 2N3055 DC variable power with 2n3055
Contextual Info: 2N3055A NPN MJ15015, MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These

Contextual Info: 2N3055A SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055A is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO3 MAXIMUM RATINGS IC 15 A IB 7.0 A VCE 60 V PDISS 115 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC

Contextual Info: 2N3055A m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055A is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T03 U 4J MAXIMUM RATINGS 7.0 A VCE p 1 DISS T 60 V .65 5 -675 115 W @ T c = 25°C -65 °C to +200 °C "^"sTG

2N3055A

Abstract: Vce(sat) MJ2955A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055A DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A

2N3055A

Abstract: MJ2955A
Contextual Info: SavantIC Semiconductor Product Specification 2N3055A Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type MJ2955A ·Excellent Safe Operating Area APPLICATIONS ·For high power audio ,stepping motor and other linear applications

2N30S5

Abstract: 2N305
Contextual Info: 2N3055A 2N3055A NPN POWER TRANSISTOR High Power Audio, Stepping Motor and Other Linear Applications DIM A B C D E F G H J K I M MIN MAX 39,37 22,22 8,50 6,35 1.09 0,96 1,77 29,90 30,4 10,69 11,18 5,72 5,20 16,64 17,15 11,15 12,25 26,67 3,84 4,19 - PIN CONFIGURATION

Contextual Info: SILICON NPN POWER TRANSISTOR IT ¡electronics . Semelab Limited 2N3055 High Gain A t High Current. Hermetic T03 Metal package. Ideally Suited For General Purpose Switching Screening Options Available

Transistor 2n3055

Abstract: power transistor 2n3055 t03 package transistor pin dimensions tr 2n3055 2N3055 2n3055 pin
Contextual Info: SILICON NPN POWER TRANSISTOR IT ¡electronics . Semelab Limited 2N3055 High Gain A t High Current. Hermetic T03 Metal package. Ideally Suited For General Purpose Switching Screening Options Available

Contextual Info: ^zmi-Conductoi 'LPtoaucti, Dna. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212) 227-6005 FAX: (973) 376-8960 NPN 2N3055A Complementary Silicon High-Power TVansistors MJ15015 . . PowerBase complementary transistors designed for high

Contextual Info: c^ Jstisii*/ <£s.m.i-(lon.<Licko\ Una. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN 2N3055A Complementary Silicon High-Power TVansistors MJ15015 . . PowerBase complementary transistors designed for high

MJ15016

Abstract: 2N3055AG MJ15015 2N3055A MJ15015G MJ15016G 2N3055 NPN Transistor 2N3055 2N3055A 2n3055 MJ-15016
Contextual Info: 2N3055A NPN , MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These