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    2N6577 Price and Stock

    . 2N6577

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2N6577 9 1
    • 1 $21.6
    • 10 $21.6
    • 100 $21.6
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    General Electric Company 2N6577

    POWER BIPOLAR TRANSISTOR, 15A I(C), 90V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-204AA, METAL, 2 PIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6577 44
    • 1 $30
    • 10 $30
    • 100 $25.5
    • 1000 $25.5
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    Henkel AG & Co KGaA 2N6577

    POWER BIPOLAR TRANSISTOR, 15A I(C), 90V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-204AA, METAL, 2 PIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6577 36
    • 1 $56
    • 10 $50.4
    • 100 $47.6
    • 1000 $47.6
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    STMicroelectronics 2N6577

    POWER BIPOLAR TRANSISTOR, 15A I(C), 90V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-204AA, METAL, 2 PIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6577 25
    • 1 $19.5
    • 10 $19.5
    • 100 $19.5
    • 1000 $19.5
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    Fairchild Semiconductor Corporation 2N6577

    POWER BIPOLAR TRANSISTOR, 15A I(C), 90V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-204AA, METAL, 2 PIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6577 20
    • 1 $30
    • 10 $28.5
    • 100 $27
    • 1000 $27
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    Find more 2N6577 price and stock on Findchips.com

    2N6577 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6577 Motorola Bipolar Transistor, NPN Silicon Power Darlington Transistor - Pol=NPN / Pkg=TO3 / Vceo=90 / Ic=15 / Hfe=500-5k / fT(Hz)=200M / Pwr(W)=120 Original PDF
    2N6577 On Semiconductor NPN Silicon Power Darlington Transistor Original PDF
    2N6577 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=90 / Ic=15 / Hfe=500-5k / fT(Hz)=200M / Pwr(W)=120 Original PDF
    2N6577 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6577 Central Semiconductor POWER DARLINGTON TRANSISTORS (METAL) Scan PDF
    2N6577 Central Semiconductor BJT, NPN, Power Transistor, IC 15A - Pol=NPN / Pkg=TO3 / Vceo=90 / Ic=15 / Hfe=500-5k / fT(Hz)=200M / Pwr(W)=120 Scan PDF
    2N6577 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N6577 General Electric 15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. - Pol=NPN / Pkg=TO3 / Vceo=90 / Ic=15 / Hfe=500-5k / fT(Hz)=200M / Pwr(W)=120 Scan PDF
    2N6577 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6577 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6577 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6577 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6577 Unknown Transistor Replacements Scan PDF
    2N6577 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6577 Unknown Transistor Replacements Scan PDF
    2N6577 Unknown Transistor Replacements Scan PDF
    2N6577 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6577 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6577 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6577 Semico Power Transistors Scan PDF

    2N6577 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N6576 2N6577 2N6578 SILICON NPN DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6576, 2N6577, and 2N6578 are silicon NPN Darlington power transistors designed for general purpose switching applications.


    Original     		PDF 2N6576 2N6577 2N6578 2N6576, 2N6577, 2N6578 100mA

    2N6576

    Abstract: 2N6578 2N6577 darlington npn 90v
    Text: Inchange Semiconductor Product Specification 2N6576 2N6577 2N6578 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・DARLINGTON ・High DC current gain APPLICATIONS ・Power switching ・Audio amplifiers ・Hammer drivers ・Series and shunt regulators


    Original     		PDF 2N6576 2N6577 2N6578 2N6576 2N6577 2N6578 darlington npn 90v

    Untitled

    Abstract: No abstract text available
    Text: 2N6577 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6577 O204AA) 16-Jul-02

    mje15033 replacement

    Abstract: BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • • • Replacement for 2N3055 and Driver


    Original     		PDF 2N3055 2N6576 2N6577 2N6578 TIP73B TIP74 TIP74A TIP74B TIP75 mje15033 replacement BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement

    NPN Transistor 2N3055 darlington

    Abstract: 2N3055 MOTOROLA 2N6576 2N3055* motorola 2N3055 2N6577 2N6578
    Text: MOTOROLA Order this document by 2N6576/D SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • •


    Original     		PDF 2N6576/D* 2N6576/D NPN Transistor 2N3055 darlington 2N3055 MOTOROLA 2N6576 2N3055* motorola 2N3055 2N6577 2N6578

    2N6576

    Abstract: 2N6578 2N6577 darlington npn 90v
    Text: SavantIC Semiconductor Product Specification 2N6576 2N6577 2N6578 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·DARLINGTON ·High DC current gain APPLICATIONS ·Power switching ·Audio amplifiers ·Hammer drivers ·Series and shunt regulators


    Original     		PDF 2N6576 2N6577 2N6578 2N6576 2N6577 2N6578 darlington npn 90v

    2N6577

    Abstract: No abstract text available
    Text: 2N6577 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6577 O204AA) 31-Jul-02 2N6577

    2N6576

    Abstract: 2N6578 darlington npn 90v 2N6577
    Text: JMnic Product Specification 2N6576 2N6577 2N6578 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・DARLINGTON ・High DC current gain APPLICATIONS ・Power switching ・Audio amplifiers ・Hammer drivers ・Series and shunt regulators PINNING


    Original     		PDF 2N6576 2N6577 2N6578 2N6576 2N6577 2N6578 darlington npn 90v

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    pmd10K80

    Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
    Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789


    Original     		PDF 2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 pmd10K80 PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    HEP transistors

    Abstract: 2n6576 2N6578
    Text: File Number 2N6576, 2N6577, 2N6578 1152 15-Ampere N-P-N Darlington Power Transistors 60, 90, 120 Volts, 120 Watts Gain of 2000 at 4 A TERM INAL DESIGNATIONS Features: c • Operates from 1C without predriver ■ Low leakage at high temperature Applications:


    OCR Scan     		PDF 2N6576, 2N6577, 2N6578 15-Ampere 2751ft 2N6578 HEP transistors 2n6576

    2N3055 NPN MOTOROLA POWER TRANSISTOR

    Abstract: NPN Transistor 2N3055 darlington 2n3055 motorola Motorola ic 2N6576 2N6577 2n6578
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington TVansistors •Motorola P ry fy rtd Oovte« General-purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • • •


    OCR Scan     		PDF 2N3055 2N6576 2N6577 2N6578 2N3055 NPN MOTOROLA POWER TRANSISTOR NPN Transistor 2N3055 darlington 2n3055 motorola Motorola ic 2n6578

    2N6578

    Abstract: BM-500 2N6576 2N6577
    Text: Data Sheet 2N6576 2N6577 2N6578 Central Sem iconductor Corp. NPN SILICON POWER DARLINGTON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-3 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF 2n6576 2n6577 2n6578 2N6578 150mA 400mA 100mA BM-500

    transistor equivalenti

    Abstract: 2N6576 equivalent 2N6576 2N6577 2N6578 20000 watts audio power amplifier circuit diagram 2N6578 equivalent B-01 N9543 GD175B
    Text: Q l 3875081' G E "'SOLID d STATE F | “ 3 0 7 S D Ô 1 G O IT E S T 0 1 E ~1 7 2 5 9 ' 1 D T ' 5 ’3 ~2 - 1 Power Transistors File N u m b e r 1152 2N6576, 2N6577, 2N6578


    OCR Scan     		PDF 307SDÃ 2N6576, 2N6577, 2N6578 15-Ampere TQ-204AA 2N6578 transistor equivalenti 2N6576 equivalent 2N6576 2N6577 20000 watts audio power amplifier circuit diagram 2N6578 equivalent B-01 N9543 GD175B

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-3 Case Continued TYPE NO. •c (A) NPN PNP Pd (W) bvceo (V) (V) hFE 8 lc »TYP (A) VCE(SAT) @ic (V) (A) MAX h *TYP (MHZ) MIN MIN MIN MAX 10 125 110 100 20 100 5.0 3.5 10 4.0 2N6249 10 175 300 200 10 50 10 1.5 10 2.5 2N6250 10 175 375


    OCR Scan     		PDF 2N6249 2N6250 2N6251 2N6253 2N6254 2N6248 2N6282 2N6285 2N6547 2N6576

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)


    OCR Scan     		PDF 5-500V MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 MJ10012 MJ13015

    transistor buv18a

    Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
    Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min


    OCR Scan     		PDF MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    2N6248

    Abstract: 2N6249 2N6250 2N6251 2N6253 2N6254 2N6282 2N6283 2N6284 2N6285
    Text: Power Transistors TO-3 Case Continued TYPIE NO. •c (A) NPN PNP Pd (W) MAX bvcbo bvceo @ hFE lC *TYP (V) (V) MIN MIN MIN MAX (A) V CE(SAT) @ ic (V) (A) MAX fT *TYP (MHZ) MIN 10 125 110 100 20 100 5.0 3.5 10 4.0 10 175 300 200 10 50 10 1.5 10 2.5 2N6250


    OCR Scan     		PDF 2N6248 2N6249 2N6250 2N6251 2N6253 2N6254 2N6282 2N6285 2N6283 2N6286 2N6249 2N6250 2N6251 2N6253 2N6254 2N6284

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C