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    TRANSISTOR 1202 Search Results

    TRANSISTOR 1202 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1202 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 PNP SILICON TRANSISTOR LOW VCE SAT  TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).


    Original     		PDF 2SB1424 2SB1424 2SB1424G-x-AB3-R OT-89 QW-R208-044

    2SB1424

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 Preliminary LOW VCE SAT „ PNP SILICON TRANSISTOR TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).


    Original     		PDF 2SB1424 2SB1424 2SB1424L 2SB1424G 2SB1424-x-AB3-R 2SB1424L-x-AB3-R 2SB1424G-x-AB3-R OT-89 QW-R208-044

    IMX17

    Abstract: 2SD1484K dual transistor
    Text: UTC IMX17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Two 2SD1484K chips in an SMT package. *Mounting possible with SMT3 automatic mounting machine. *Transistor elements are independent, eliminating interference. *High collector current. Ic=500mA


    Original     		PDF IMX17 2SD1484K 500mA OT-26 QW-R215-001 IMX17 dual transistor

    Untitled

    Abstract: No abstract text available
    Text: UTC IMX17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Two 2SD1484K chips in an SMT package. *Mounting possible with SMT3 automatic mounting machine. *Transistor elements are independent, eliminating interference. *High collector current. Ic=500mA


    Original     		PDF IMX17 2SD1484K 500mA OT-26 QW-R215-001 500mA, 100mA -20mA, 100MHz

    2SB1412

    Abstract: 2SB1412L-TN3-F-R 2SB1412-TN3-F-R
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. 1 TO-252 FEATURES *Excellent DC current gain characteristics *Low VCE SAT


    Original     		PDF 2SB1412 2SB1412 O-252 2SB1412L 2SB1412-TN3-F-R 2SB1412L-TN3-F-R QW-R209-021 2SB1412L-TN3-F-R 2SB1412-TN3-F-R

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SB1386 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR DESCRIPTION The UTC 2SB1386 is an epitaxial planar type PNP silicon transistor. 1 FEATURES *Excellent DC current gain characteristics *Low VCE sat VCE(sat)= -0.35V (Typ) (Ic/IB = -4A/-0.1A)


    Original     		PDF 2SB1386 2SB1386 OT-89 Figure12 QW-R208-019

    UTC 8050SL

    Abstract: NPN transistor 8050s UTC8050 NA1100 8050SL
    Text: UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.


    Original     		PDF 8050S UTC8050S 700mA 8550S 8050SL QW-R201-011 UTC 8050SL NPN transistor 8050s UTC8050 NA1100 8050SL

    ic 353

    Abstract: KTC601U SOT-353 SOT-353 Q2 marking LGR
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 KTC601U Plastic-Encapsulate Transistors DUAL TRANSISTOR NPN+NPN Features z A super-minimold package houses 2 Transistor z Excellent temperature response between these 2 transistor z High pairing property in hFE.


    Original     		PDF OT-353 KTC601U 100mA ic 353 KTC601U SOT-353 SOT-353 Q2 marking LGR

    8050S

    Abstract: ic 8050s UTC8550S transistor 8550S UTC8050S 8550S
    Text: UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.


    Original     		PDF 8050S UTC8050S 700mA 8550S QW-R201-011 8050S ic 8050s UTC8550S transistor 8550S 8550S

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SB1386 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR DESCRIPTION The UTC 2SB1386 is an epitaxial planar type PNP silicon transistor. 1 FEATURES *Excellent DC current gain characteristics *Low VCE sat VCE(sat)= -0.35V (Typ) (Ic/IB = -4A/-0.1A)


    Original     		PDF 2SB1386 2SB1386 OT-89 QW-R208-019

    2SB1132G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. „ FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) „ ORDERING INFORMATION


    Original     		PDF 2SB1132 2SB1132 -500mA/-50mA) 2SB1132L-x-AB3-R 2SB1132G-x-AB3-R 2SB1132L-x-TN3-R 2SB1132G-x-TN3-R 2SB1132L-x-TN3-T 2SB1132G-x-TN3-T OT-89 2SB1132G

    he8050l

    Abstract: audio output TRANSISTOR NPN
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8050 HE8050 HE8550 O-92NL HE8050L HE8050-x-T9N-A-B HE8050L-x-T9N-A-B HE8050-x-T9N-A-K HE8050L-x-T9N-A-K O-92NL he8050l audio output TRANSISTOR NPN

    D9D TRANSISTOR

    Abstract: SOT-23 marking D9D marking D9D d9d marking code transistor D9D npn D9D
    Text: UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC 8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.


    Original     		PDF 8050S 8050S 800mA 8550S OT-23 D9D TRANSISTOR SOT-23 marking D9D marking D9D d9d marking code transistor D9D npn D9D

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8051 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR „ DESCRIPTION The UTC HE8051 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8051 HE8051 HE8551 HE8051L-x-T92-B HE8051L-x-T92-K HE8051G-x-T92-B HE8051G-x-T92-K QW-R201-046 HE80lues

    2SA2071

    Abstract: 2SC5824 T100
    Text: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 !External dimensions (Units : mm) MPT3 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) !Applications NPN Silicon epitaxial planar transistor 0.4 1.5


    Original     		PDF 2SC5824 200mV 200mA) 2SA2071. 2SA2071 2SC5824 T100

    transistor dk 50

    Abstract: transistor dk transistor 2SC4672 dk transistor
    Text: UTC 2SC4672 TRANSISTOR LOW FREQUENCY TRANSISTOR 50V,2A DESCRIPTION The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. 1 FEATURES *Low saturation voltage, typically VCE (sat)=0.1V at IC / IB=1A / 50mA *Excellent DC current gain characteristics


    Original     		PDF 2SC4672 2SC4672 OT-89 150products QW-R208-004 transistor dk 50 transistor dk transistor 2SC4672 dk transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR „ DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8550 HE8550 HE8050 HE8550-x-AB3-R HE8550-x-AE3-R HE8550-x-T92-B HE8550-x-T92-K HE8550-x-T9N-B HE8550-x-T9N-K HE8550L-x-AB3-R

    UTC8050S

    Abstract: c8050s UTC 8050SL transistor marking D9
    Text: UNISONIC TECHNOLOGIES CO., LTD 8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR 2 DESCRIPTION The UTC 8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and


    Original     		PDF 8050S 8050S 700mA 8550S OT-23 8050SL 8050S-AE3-R 8050SL-AE3-R OT-23 QW-R206-001 UTC8050S c8050s UTC 8050SL transistor marking D9

    2SB1198

    Abstract: sot akr
    Text: UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 FEATURES *High breakdown voltage : BVCEO= -80V *Low VCE sat : VCE(sat)= -0.2V (Typ) (Ic/IB = -0.5A/-50mA)


    Original     		PDF 2SB1198 2SB1198 A/-50mA) OT-23 QW-R206-040 sot akr

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR  DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor.  FEATURES *Low VCE SAT : VCE (SAT)= 0.15V(Typ.) (IC/IB= 500mA/50mA) * Complement the 2SB1132.


    Original     		PDF 2SD1664 2SD1664 500mA/50mA) 2SB1132. 2SD1664G-x-AB3-R 2SD1664G-x-AE3-R OT-89 OT-23

    ksc945

    Abstract: equivalent KSC945 KSA733
    Text: UTC KSC945 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC KSC945 is an audio frequency amplifier high frequency OSC NPN transistor. 1 FEATURES *Collector-Base voltage: BVCBO=60V *Collector current up to 150mA


    Original     		PDF KSC945 KSC945 150mA KSA733 QW-R201-060 equivalent KSC945 KSA733

    2SC945

    Abstract: 2SC945 DATASHEET 2SA733
    Text: UTC 2SC945 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. 1 FEATURES *Collector-Emitter voltage: BVCBO=50V *Collector current up to 150mA


    Original     		PDF 2SC945 2SC945 150mA 2SA733 QW-R201-005 2SC945 DATASHEET 2SA733

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    BC450

    Abstract: 5v power transistor
    Text: CRO BC450 PNP SILICON TRANSISTOR DESCRIPTION BC450 is PNP silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage


    OCR Scan     		PDF BC450 BC450 300mA 625mW 100mA 100MII; 300/iS, 5v power transistor