Untitled
Abstract: No abstract text available
Text: ZXTN07012EFF 12V, SOT23F, NPN high gain power transistor Summary BVCEO > 12V BVECO > 3V IC cont = 4.5A VCE(sat) < 70mV @ 1A RCE(sat) = 43m⍀ PD = 1.5W Complementary part number ZXTP07012EFF Description C This low voltage NPN transistor has been designed for applications
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ZXTN07012EFF
OT23F,
ZXTP07012EFF
OT23F
OT23F
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TRANSISTOR MARKING 1d3
Abstract: ZXTN07012EFF ZXTN07012EFFTA ZXTP07012EFF
Text: ZXTN07012EFF 12V, SOT23F, NPN high gain power transistor Summary BVCEO > 12V BVECO > 3V IC cont = 4.5A VCE(sat) < 70mV @ 1A RCE(sat) = 43m⍀ PD = 1.5W Complementary part number ZXTP07012EFF Description C This low voltage NPN transistor has been designed for applications
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ZXTN07012EFF
OT23F,
ZXTP07012EFF
OT23F
OT23F
TRANSISTOR MARKING 1d3
ZXTN07012EFF
ZXTN07012EFFTA
ZXTP07012EFF
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2SC5249
Abstract: FM20 NPN Transistor 600V 0,2A vbe 12v, vce 600v NPN Transistor
Text: 2SC5249 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor A IB 1.5 PC 35(Tc=25°C) Tj Tstg µA 600min V hFE VCE=4V, IC=1A 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V 150 °C fT VCE=12V, IE=–0.3A
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2SC5249
50typ
19max
600min
100max
O220F)
2SC5249
FM20
NPN Transistor 600V 0,2A
vbe 12v, vce 600v NPN Transistor
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2SC5249
Abstract: FM20
Text: 2SC5249 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor A IB 1.5 PC 35(Tc=25°C) Tj Tstg µA 600min V hFE VCE=4V, IC=1A 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V 150 °C fT VCE=12V, IE=–0.3A
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2SC5249
50typ
19max
600min
100max
O220F)
2SC5249
FM20
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IC 630
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •
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ZXTC6717MC
100mV
-140mV
DS31926
IC 630
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •
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ZXTC6717MC
100mV
-140mV
DS31926
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ZXTN25012EZ
Abstract: TS16949 ZXTN25012EZTA ZXTP25012EZ
Text: ZXTN25012EZ 12V NPN high gain transistor in SOT89 Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6.5A VCE(sat) < 38mV @ 1A RCE(sat) = 25m⍀ PD = 2.4W Complementary part number ZXTP25012EZ Description C Packaged in the SOT89 outline this new ultra high gain, low saturation
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ZXTN25012EZ
ZXTP25012EZ
D-81541
ZXTN25012EZ
TS16949
ZXTN25012EZTA
ZXTP25012EZ
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zxtn25012efh
Abstract: transistor 1.25W
Text: ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline
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ZXTN25012EFH
zxtn25012efh
transistor 1.25W
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ZXTN25012EFH
Abstract: No abstract text available
Text: ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline
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ZXTN25012EFH
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ZXTN25012EFH
Abstract: No abstract text available
Text: ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECO > 4.5V hFE > 500 IC cont = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline
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ZXTN25012EFH
ZXTN25012EFH
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Untitled
Abstract: No abstract text available
Text: ZUMT717 12V PNP POWER SWITCHING TRANSISTOR IN SOT323 Features Mechanical Data • • • • • BVCEO > -12V IC = -1.25A Continuous Collector Current ICM = -3A Peak Pulse Current Low Saturation Voltage VCE sat < -215mV @ IC = -1A RCE(SAT) = 150mΩ for a Low Equivalent On-Resistance
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ZUMT717
OT323
-215mV
J-STD-020
500mW
ZUMT617
DS33339
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ZXTN25012EFL
Abstract: TS16949 ZXTN25012EFLTA
Text: ZXTN25012EFL 12V, SOT23, NPN low power transistor Summary BVCEO > 12V BVECO > 4.5V hFE > 500 IC cont = 2A VCE(sat) < 65 mV @ 1A RCE(sat) = 46 m⍀ PD = 350mW Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse
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ZXTN25012EFL
350mW
ZXTN25012EFLTA
D-81541
ZXTN25012EFL
TS16949
ZXTN25012EFLTA
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IC 630
Abstract: marking DA1
Text: A Product Line of Diodes Incorporated ZXTC6717MC COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • RSAT = 45mΩ for a low equivalent On-Resistance
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ZXTC6717MC
100mV
-140mV
DS31926
IC 630
marking DA1
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTD6717E6 ADVANCE INFORMATION COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTORS IN SOT26 Features & Benefits Mechanical Data NPN Transistor • BVCEO > 15V • IC = 1.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A
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ZXTD6717E6
100mV
-140mV
AEC-Q10knowledge
DS33653
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2SC4495
Abstract: FM20
Text: 2SC4495 High hFE LOW VCE sat Silicon NPN Triple Diffused Planar Transistor A hFE IB 1 A VCE(sat) PC 25(Tc=25°C) W fT Tj 150 °C COB –55 to +150 °C Tstg µA 50min V VCE=4V, IC=0.5A 500min IC=1A, IB=20mA 0.5max V VCE=12V, IE=–0.1A 40typ MHz VCB=10V,f=1MHz
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2SC4495
10max
50min
500min
40typ
30typ
45typ
60typ
2SC4495
FM20
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2SC3851
Abstract: 2SC3851A FM20
Text: 2SC3851/3851A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1488/A A V(BR)CEO IB 1 A hFE VCE=4V, IC=1A 60min 80min 40 to320 PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB
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2SC3851/3851A
2SA1488/A)
100max
60min
80min
to320
15typ
60typ
2SC3851
2SC3851A
FM20
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2SC4495
Abstract: FM20
Text: 2SC4495 High hFE LOW VCE sat Silicon NPN Triple Diffused Planar Transistor A hFE IB 1 A VCE(sat) PC 25(Tc=25°C) W fT Tj 150 °C COB –55 to +150 °C Tstg µA 50min V VCE=4V, IC=0.5A 500min IC=1A, IB=20mA 0.5max V VCE=12V, IE=–0.1A 40typ MHz VCB=10V,f=1MHz
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2SC4495
10max
50min
500min
40typ
30typ
45typ
60typ
85typ
2SC4495
FM20
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2sc4024
Abstract: FM20 DSA0016508
Text: 2SC4024 High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor IEBO VEB=15V 10max µA V(BR)CEO IC=25mA 50min V VCE=4V, IC=1A 300 to 1600 3 A VCE(sat) IC=5A, IB=0.1A 0.5max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 24typ MHz Tj 150 °C COB VCB=10V, f=1MHz
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2SC4024
O220F)
10max
50min
24typ
150typ
100x100x2
50x50x2
2sc4024
FM20
DSA0016508
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bc 617 transistor equivalent
Abstract: FMMT-617 FMMT617 TRANSISTOR BC 846B sf 818 transistor BC808 BC818 FMMT620 FMMT717 FMMT720
Text: Application Note 15 Issue 1 November 1995 Application Note 15 Issue 1 November 1995 Features and Applications of the FMMT617 and FMMT717 “SuperSOT” SOT23 Transistors The FMMT717, though not quite as good as it’s NPN counterpart, still gives excellent performance. It is a 12V PNP
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FMMT617
FMMT717
FMMT717,
160mV
100mA
FMMT717
bc 617 transistor equivalent
FMMT-617
TRANSISTOR BC 846B
sf 818 transistor
BC808
BC818
FMMT620
FMMT720
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transistor 12v 1A NPN
Abstract: ap15* regulator AP1502
Text: AP1502 200KHz, 1A PWM Buck DC/DC Converter & 1 Linear CTRL Features General Descriptions - Provides two regulated voltages -one PWM Regulator Direct output or Drive NPN -one Linear Controller (Drive NPN or N-MOS) - Output voltage: 3.3V, 5V, 12V and adjustable
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AP1502
200KHz,
AP1502
04REF
041REF
transistor 12v 1A NPN
ap15* regulator
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ap15* regulator
Abstract: "PWM regulator" AP1502 12v to 20v converter pwm ic 494
Text: AP1502 200KHz, 1A PWM Buck DC/DC Converter & 1 Linear CTRL Features General Descriptions - Provides two regulated voltages -one PWM Regulator Direct output or Drive NPN -one Linear Controller (Drive NPN or N-MOS) - Output voltage: 3.3V, 5V, 12V and adjustable
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AP1502
200KHz,
AP1502
04REF
041REF
ap15* regulator
"PWM regulator"
12v to 20v converter
pwm ic 494
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dc-ac converter royer
Abstract: 12v schematic of fluorescent lamps schematic diagram modified sine wave dc-ac inverter Royer resonant an1722 ccfl Royer converter tsm108 transformer winding formula 220v Ac to 12v Dc royer dc-ac converter royer 220v
Text: AN1722 APPLICATION NOTE Design and Realization of a CCFL Application Using TSM108, STN790A, or STS3DPFS30, and STSA1805 1. ABSTRACT This technical document shows how to use the integrated circuit TSM108, the PNP power bipolar transistor STN790A, or the P channel power MOSFET STS3DPFS30, the NPN power bipolar transistor
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AN1722
TSM108,
STN790A,
STS3DPFS30,
STSA1805
STSA1805
1N5821
dc-ac converter royer
12v schematic of fluorescent lamps
schematic diagram modified sine wave dc-ac inverter
Royer resonant
an1722 ccfl
Royer converter
tsm108
transformer winding formula 220v Ac to 12v Dc
royer
dc-ac converter royer 220v
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ZXTC6717MC
Abstract: marking DA1 DFN3020B-8 ZXTC6717MCTA
Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 15V • RSAT = 45mΩ • IC = 4.5A PNP Transistor
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ZXTC6717MC
100mV
DFN3020B-8
J-STD-020
MIL-STD-202,
DS31926
ZXTC6717MC
marking DA1
DFN3020B-8
ZXTC6717MCTA
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NPN Transistor 600V
Abstract: NPN Transistor 600V 0,2A 2SC5249 NPN 600V transistor transistor ,12v ,Ic 1A ,NPN vbe 12v, vce 600v NPN Transistor transistor Ic 1A datasheet NPN transistor 2SC5249 transistor 12v 1A NPN
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5249 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 600V(Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator and general purpose applications.
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2SC5249
NPN Transistor 600V
NPN Transistor 600V 0,2A
2SC5249
NPN 600V transistor
transistor ,12v ,Ic 1A ,NPN
vbe 12v, vce 600v NPN Transistor
transistor Ic 1A datasheet NPN
transistor 2SC5249
transistor 12v 1A NPN
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