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    TRANSISTOR 12V 1A NPN Search Results

    TRANSISTOR 12V 1A NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 12V 1A NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ZXTN07012EFF 12V, SOT23F, NPN high gain power transistor Summary BVCEO > 12V BVECO > 3V IC cont = 4.5A VCE(sat) < 70mV @ 1A RCE(sat) = 43m⍀ PD = 1.5W Complementary part number ZXTP07012EFF Description C This low voltage NPN transistor has been designed for applications


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    PDF ZXTN07012EFF OT23F, ZXTP07012EFF OT23F OT23F

    TRANSISTOR MARKING 1d3

    Abstract: ZXTN07012EFF ZXTN07012EFFTA ZXTP07012EFF
    Text: ZXTN07012EFF 12V, SOT23F, NPN high gain power transistor Summary BVCEO > 12V BVECO > 3V IC cont = 4.5A VCE(sat) < 70mV @ 1A RCE(sat) = 43m⍀ PD = 1.5W Complementary part number ZXTP07012EFF Description C This low voltage NPN transistor has been designed for applications


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    PDF ZXTN07012EFF OT23F, ZXTP07012EFF OT23F OT23F TRANSISTOR MARKING 1d3 ZXTN07012EFF ZXTN07012EFFTA ZXTP07012EFF

    2SC5249

    Abstract: FM20 NPN Transistor 600V 0,2A vbe 12v, vce 600v NPN Transistor
    Text: 2SC5249 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor A IB 1.5 PC 35(Tc=25°C) Tj Tstg µA 600min V hFE VCE=4V, IC=1A 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V 150 °C fT VCE=12V, IE=–0.3A


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    PDF 2SC5249 50typ 19max 600min 100max O220F) 2SC5249 FM20 NPN Transistor 600V 0,2A vbe 12v, vce 600v NPN Transistor

    2SC5249

    Abstract: FM20
    Text: 2SC5249 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor A IB 1.5 PC 35(Tc=25°C) Tj Tstg µA 600min V hFE VCE=4V, IC=1A 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V 150 °C fT VCE=12V, IE=–0.3A


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    PDF 2SC5249 50typ 19max 600min 100max O220F) 2SC5249 FM20

    IC 630

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •


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    PDF ZXTC6717MC 100mV -140mV DS31926 IC 630

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •


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    PDF ZXTC6717MC 100mV -140mV DS31926

    ZXTN25012EZ

    Abstract: TS16949 ZXTN25012EZTA ZXTP25012EZ
    Text: ZXTN25012EZ 12V NPN high gain transistor in SOT89 Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6.5A VCE(sat) < 38mV @ 1A RCE(sat) = 25m⍀ PD = 2.4W Complementary part number ZXTP25012EZ Description C Packaged in the SOT89 outline this new ultra high gain, low saturation


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    PDF ZXTN25012EZ ZXTP25012EZ D-81541 ZXTN25012EZ TS16949 ZXTN25012EZTA ZXTP25012EZ

    zxtn25012efh

    Abstract: transistor 1.25W
    Text: ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline


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    PDF ZXTN25012EFH zxtn25012efh transistor 1.25W

    ZXTN25012EFH

    Abstract: No abstract text available
    Text: ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline


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    PDF ZXTN25012EFH

    ZXTN25012EFH

    Abstract: No abstract text available
    Text: ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECO > 4.5V hFE > 500 IC cont = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline


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    PDF ZXTN25012EFH ZXTN25012EFH

    Untitled

    Abstract: No abstract text available
    Text: ZUMT717 12V PNP POWER SWITCHING TRANSISTOR IN SOT323 Features Mechanical Data • • • • • BVCEO > -12V IC = -1.25A Continuous Collector Current ICM = -3A Peak Pulse Current Low Saturation Voltage VCE sat < -215mV @ IC = -1A RCE(SAT) = 150mΩ for a Low Equivalent On-Resistance


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    PDF ZUMT717 OT323 -215mV J-STD-020 500mW ZUMT617 DS33339

    ZXTN25012EFL

    Abstract: TS16949 ZXTN25012EFLTA
    Text: ZXTN25012EFL 12V, SOT23, NPN low power transistor Summary BVCEO > 12V BVECO > 4.5V hFE > 500 IC cont = 2A VCE(sat) < 65 mV @ 1A RCE(sat) = 46 m⍀ PD = 350mW Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse


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    PDF ZXTN25012EFL 350mW ZXTN25012EFLTA D-81541 ZXTN25012EFL TS16949 ZXTN25012EFLTA

    IC 630

    Abstract: marking DA1
    Text: A Product Line of Diodes Incorporated ZXTC6717MC COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • RSAT = 45mΩ for a low equivalent On-Resistance


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    PDF ZXTC6717MC 100mV -140mV DS31926 IC 630 marking DA1

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTD6717E6 ADVANCE INFORMATION COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTORS IN SOT26 Features & Benefits Mechanical Data NPN Transistor • BVCEO > 15V • IC = 1.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A


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    PDF ZXTD6717E6 100mV -140mV AEC-Q10knowledge DS33653

    2SC4495

    Abstract: FM20
    Text: 2SC4495 High hFE LOW VCE sat Silicon NPN Triple Diffused Planar Transistor A hFE IB 1 A VCE(sat) PC 25(Tc=25°C) W fT Tj 150 °C COB –55 to +150 °C Tstg µA 50min V VCE=4V, IC=0.5A 500min IC=1A, IB=20mA 0.5max V VCE=12V, IE=–0.1A 40typ MHz VCB=10V,f=1MHz


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    PDF 2SC4495 10max 50min 500min 40typ 30typ 45typ 60typ 2SC4495 FM20

    2SC3851

    Abstract: 2SC3851A FM20
    Text: 2SC3851/3851A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1488/A A V(BR)CEO IB 1 A hFE VCE=4V, IC=1A 60min 80min 40 to320 PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB


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    PDF 2SC3851/3851A 2SA1488/A) 100max 60min 80min to320 15typ 60typ 2SC3851 2SC3851A FM20

    2SC4495

    Abstract: FM20
    Text: 2SC4495 High hFE LOW VCE sat Silicon NPN Triple Diffused Planar Transistor A hFE IB 1 A VCE(sat) PC 25(Tc=25°C) W fT Tj 150 °C COB –55 to +150 °C Tstg µA 50min V VCE=4V, IC=0.5A 500min IC=1A, IB=20mA 0.5max V VCE=12V, IE=–0.1A 40typ MHz VCB=10V,f=1MHz


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    PDF 2SC4495 10max 50min 500min 40typ 30typ 45typ 60typ 85typ 2SC4495 FM20

    2sc4024

    Abstract: FM20 DSA0016508
    Text: 2SC4024 High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor IEBO VEB=15V 10max µA V(BR)CEO IC=25mA 50min V VCE=4V, IC=1A 300 to 1600 3 A VCE(sat) IC=5A, IB=0.1A 0.5max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 24typ MHz Tj 150 °C COB VCB=10V, f=1MHz


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    PDF 2SC4024 O220F) 10max 50min 24typ 150typ 100x100x2 50x50x2 2sc4024 FM20 DSA0016508

    bc 617 transistor equivalent

    Abstract: FMMT-617 FMMT617 TRANSISTOR BC 846B sf 818 transistor BC808 BC818 FMMT620 FMMT717 FMMT720
    Text: Application Note 15 Issue 1 November 1995 Application Note 15 Issue 1 November 1995 Features and Applications of the FMMT617 and FMMT717 “SuperSOT” SOT23 Transistors The FMMT717, though not quite as good as it’s NPN counterpart, still gives excellent performance. It is a 12V PNP


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    PDF FMMT617 FMMT717 FMMT717, 160mV 100mA FMMT717 bc 617 transistor equivalent FMMT-617 TRANSISTOR BC 846B sf 818 transistor BC808 BC818 FMMT620 FMMT720

    transistor 12v 1A NPN

    Abstract: ap15* regulator AP1502
    Text: AP1502 200KHz, 1A PWM Buck DC/DC Converter & 1 Linear CTRL „ Features „ General Descriptions - Provides two regulated voltages -one PWM Regulator Direct output or Drive NPN -one Linear Controller (Drive NPN or N-MOS) - Output voltage: 3.3V, 5V, 12V and adjustable


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    PDF AP1502 200KHz, AP1502 04REF 041REF transistor 12v 1A NPN ap15* regulator

    ap15* regulator

    Abstract: "PWM regulator" AP1502 12v to 20v converter pwm ic 494
    Text: AP1502 200KHz, 1A PWM Buck DC/DC Converter & 1 Linear CTRL „ Features „ General Descriptions - Provides two regulated voltages -one PWM Regulator Direct output or Drive NPN -one Linear Controller (Drive NPN or N-MOS) - Output voltage: 3.3V, 5V, 12V and adjustable


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    PDF AP1502 200KHz, AP1502 04REF 041REF ap15* regulator "PWM regulator" 12v to 20v converter pwm ic 494

    dc-ac converter royer

    Abstract: 12v schematic of fluorescent lamps schematic diagram modified sine wave dc-ac inverter Royer resonant an1722 ccfl Royer converter tsm108 transformer winding formula 220v Ac to 12v Dc royer dc-ac converter royer 220v
    Text: AN1722 APPLICATION NOTE Design and Realization of a CCFL Application Using TSM108, STN790A, or STS3DPFS30, and STSA1805 1. ABSTRACT This technical document shows how to use the integrated circuit TSM108, the PNP power bipolar transistor STN790A, or the P channel power MOSFET STS3DPFS30, the NPN power bipolar transistor


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    PDF AN1722 TSM108, STN790A, STS3DPFS30, STSA1805 STSA1805 1N5821 dc-ac converter royer 12v schematic of fluorescent lamps schematic diagram modified sine wave dc-ac inverter Royer resonant an1722 ccfl Royer converter tsm108 transformer winding formula 220v Ac to 12v Dc royer dc-ac converter royer 220v

    ZXTC6717MC

    Abstract: marking DA1 DFN3020B-8 ZXTC6717MCTA
    Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 15V • RSAT = 45mΩ • IC = 4.5A PNP Transistor


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    PDF ZXTC6717MC 100mV DFN3020B-8 J-STD-020 MIL-STD-202, DS31926 ZXTC6717MC marking DA1 DFN3020B-8 ZXTC6717MCTA

    NPN Transistor 600V

    Abstract: NPN Transistor 600V 0,2A 2SC5249 NPN 600V transistor transistor ,12v ,Ic 1A ,NPN vbe 12v, vce 600v NPN Transistor transistor Ic 1A datasheet NPN transistor 2SC5249 transistor 12v 1A NPN
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5249 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 600V(Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator and general purpose applications.


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    PDF 2SC5249 NPN Transistor 600V NPN Transistor 600V 0,2A 2SC5249 NPN 600V transistor transistor ,12v ,Ic 1A ,NPN vbe 12v, vce 600v NPN Transistor transistor Ic 1A datasheet NPN transistor 2SC5249 transistor 12v 1A NPN