TRANSISTOR 20 DB 2400 MHZ Search Results

Contextual Info: BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance

Contextual Info: BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance

Contextual Info: BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 3 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance

Contextual Info: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 3 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance

Contextual Info: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 3 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance

Contextual Info: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 2 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance

Contextual Info: BLF2425M7L100; BLF2425M7LS100 Power LDMOS transistor Rev. 1 — 6 December 2013 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance

j350 TRANSISTOR

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHT1006N Rev. 0, 5/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET RF power transistor suitable for industrial heating applications from 728 to 2700 MHz. Device is capable of both CW and pulse operation.

Contextual Info: BLF8G22LS-270 Power LDMOS transistor Rev. 3 — 20 December 2012 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance

smd transistor 2300

Abstract: BLF7G24LS-160P 2300 TRANSISTOR REPLACEMENT table for transistor
Contextual Info: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 3 — 20 April 2012 Preliminary data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance

Contextual Info: BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance

Contextual Info: BLF8G24LS-200PN Power LDMOS transistor Rev. 1 — 20 January 2014 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance

Contextual Info: BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance

Contextual Info: Document Number: AFT27S006N Rev. 1, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.

Application Notes on LM7805

Abstract: lm7805 lm7805 p PCC104BCTND PCC104bct-nd ATC 4r7 capacitor 100b LM7805 05 PTF240101S BCP56 ceramic capacitor 47 pf
Contextual Info: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.

Contextual Info: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 4 — 25 July 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance

smd transistor 2300

Contextual Info: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 2 — 1 March 2012 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance

Contextual Info: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 4 — 25 July 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance

Contextual Info: BLF8G22LS-270 Power LDMOS transistor Rev. 2 — 3 December 2012 Preliminary data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance

smd transistor 2300

Contextual Info: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 5 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance

LM7805

Abstract: PCC104BCTND PCC104bct-nd H-32259-2 rf transistor 2.5GHz 240101S
Contextual Info: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.

transistor 742

Abstract: j494 transistor blf8g22ls
Contextual Info: BLF8G22LS-270V; BLF8G22LS-270GV Power LDMOS transistor Rev. 2 — 3 December 2012 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.

ECB-101537

Abstract: ECB1 transistor 20 dB 2400 mhz
Contextual Info: Product Description SGA-2186 DC-5000 MHz Silicon Germanium HBT Cascadeable Gain Block Stanford Microdevices’ SGA-2186 is a high performance cascadeable 50-ohm amplifier designed for operation from a 2.2-volt supply. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

TRANSISTOR J477

Abstract: J890
Contextual Info: Document Number: AFT23S170−13S Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.