TRANSISTOR 2N3904 E 25 Search Results

ct 2N3904

Contextual Info: 2N3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment 2N3904 2N3904 TO-92 / Bulk 2N3904-AP 2N3904 TO-92 / Ammopack s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t

2n3904

Abstract: 2n3904 225 2n3904 npn 2N3903 transistor switching transistor 30v npn transistor 2N3905 TRANSISTOR 2N3904 E 25
Contextual Info: 2N3903 2N3904 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3903 and 2N3904 types are NPN silicon transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N3905 and 2N3906.

2n3904, itt

Abstract: 2N3904 intermetall
Contextual Info: 2N3904 NPN Silicon Epitaxial Planar Ttansistor for switching and amplifier applications. As complementary type, the PNP transistor 2N3906 is recommended. On special request, this transistor is also manufactured in the pin configuration TO -18. 2.5 E - |0 <j>

Contextual Info: 2N3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V C e o = 4 0 V • Collector Dissipation: Pc max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO 60 40 6 200 625 150

pin configuration NPN transistor 2N3904

Abstract: 2N3904 plastic 2N3904 2N3906 MMBT3904 PNP switching transistor 2N3906
Contextual Info: 2N3904 Small Signal Transistor NPN t c u d o r P w e N TO-226AA (TO-92) Features 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP transistor

2N3904

Abstract: 2n3904 application 2n3904 TO-92 2N3904 dimension TRANSISTOR 2N3904 E 25 22N3904 2N3906 2N3906E
Contextual Info: 2N3904 NPN Silicon Transistor Descriptions PIN Connection • General small signal application • Switching application C Features B C B E • Low collector saturation voltage • Collector output capacitance • Complementary pair with 2N3906 E TO-92 Ordering Information

2N3055 TO220

Abstract: NPN Transistor 2N3055 darlington 100 amp npn darlington power transistors transistor BC107 specifications tip122 tip127 audio amp NPN Transistor TO92 10 amp npn darlington power transistors transistor 2n3053 DATASHEET Transistor BC107 2N3055 NPN Transistor
Contextual Info: TRANSISTOR SPECIFICATIONS - A TYPICAL TABLE FROM A CATALOGUE Transistor Polarity Number BC107 BC108 2N3904 ZTX300 2N3053 BFY51 TIP31A 2N3055 Case IC max VCE hFE Power NPN NPN NPN NPN NPN NPN NPN NPN Style TO18 TO18 TO92 E-line TO39 TO39 TO220 TO3 mA 100

2N3904

Abstract: 2N3906
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3904 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x =50nA Max. , IBL=50nA(Max.) @ V ce =30V , Veb=3V. • Excellent DC Current Gain Linearity.

n3904

Contextual Info: 2N3904 NPN SMALL SIGNAL TRANSISTOR Features • • • • Epitaxial Planar Die Construction Available in both Through-Hole andSurface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available . . . . r E"H r“A-H IT

1N916

Abstract: 2N3904 2N3906
Contextual Info: SEMICONDUCTOR 2N3904 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES Low Leakage Current N : ICEX=50nA Max. , IBL=50nA(Max.) K @VCE=30V, VEB=3V. E G Excellent DC Current Gain Linearity. J D

Contextual Info: SEMICONDUCTOR 2N3904 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) N E K @VCE=30V, VEB=3V. G D J Excellent DC Current Gain Linearity.

PNP switching transistor 2N3906 mhz

Abstract: transistor 2N3905 2n3906 2N3906 NPN Transistor 2N3904 CENTRAL
Contextual Info: 2N3905 2N3906 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3905 and 2N3906 types are PNP silicon transistors designed for general purpose amplifier and switching applications. NPN complementary types are 2N3903 and 2N3904.

2N3904

Abstract: 2N3906
Contextual Info: 2N3904 NPN SMALL SIGNAL TRANSISTOR Features Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available 2N3906 E A TO-92 B C Mechanical Data Case: TO-92, Plastic

2N3906

Abstract: tr 2n3906 2N3906 plastic 2N3906 die 2N3904 MMBT3906 marking k3 pnp
Contextual Info: 2N3906 PNP SMALL SIGNAL TRANSISTOR Features • · · · Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and Amplifier Applications Complementary NPN Types Available 2N3904 E A TO-92 B C Mechanical Data

Contextual Info: MPQ6700 SILICON COMPLEMENTARY QUAD TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ6700 is comprised of two 2N3904 NPN chips and two 2N3906 (PNP) chips to be used as dual complementary pairs for general purpose amplifier and switching

Contextual Info: 2N3904 NPN Silicon Transistor Descriptions PIN Connection • General sm all signal applicat ion • Swit ching applicat ion C Features B C B E • Low collect or sat urat ion volt age • Collect or out put capacit ance • Com plem ent ary pair wit h 2N3906

2n3904 transistor

Abstract: 2N3904, transistor 2N3904 2n3904transistor ct 2N3904
Contextual Info: Nnnam T O -9 2 P iasti -E n c a p s u la te T ra n s is to rs 2N3904 TRANSISTOR N P N FEATURE Powe dissipation Pcm : 0.625 W (Tamb=25°C) Collecto cu ent : 0-2 A 1c m Collecto -base voltage V(br)cbo •60 V Ope ating and storage junction temperature range

transistor E 13009

Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10

2N3904

Abstract: 2N3804 transistor ST 2N3904 transistor ST 2N3804 transistor 2n3903 2N3903 2n3904 225 ST 2n3904 transistor 2N 3904 N3903
Contextual Info: 2 N3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR CoN edor-Em itter Voltage: V c e o * 4 0 V C o lle cto r D issipation: P c m ax -62Sm W ABSOLUTE MAXIMUM RATINGS {TA=25t) C h a ra c te ristic C o lle cto r-B ase Voltage Collector-E m itter Voltage

Contextual Info: 2N3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCeo =40V • Collector Dissipation: Pc max =625mW T O -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

2N3903 transistor

Contextual Info: rt: N AMER PHILIPS/DISCRETE 25E D bbS'BTBl 0Q174b2 2 I A 2N3903 2N3904 T -3 £ ~ - SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for high-speed, saturated switching applications for industrial service.

2N3903

Contextual Info: 2N3903 S / S TR ELECTRONICS GENERAL PURPOSE TRANSISTOR Collector-Emitter Voltage: V c e o = 4 0 V Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

2N3904

Abstract: 2n3904 specification NPN Transistor TO92 40V 200mA TRANSISTOR 2N3904 E 25 2N3904 transistor free h 2n3904 2N3904G 2N3904-Y transistor NPN 2N3904 2n3904 datasheet
Contextual Info: 2N3904 0.2A, 60V NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM: 625mW Ta=25°C Collector Current ICM: 200mA Collector – Base Voltage V(BR)CBO: 60V

2N3904

Abstract: 2N39D4 2N3304 pc 525 2N39Q4 2n3904 225 h 2n3904 2N3904S 2N3903 2N39Q3
Contextual Info: 2N3904 S/S TR r-r. ELECTRONICS GENERAL PURPOSE TRANSISTOR Colledor-Emitter Voltage: VCEOm40V Collector Dissipation: ABSOLUTE MAXIMUM RATINGS TA=25t: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation