TRANSISTOR 2SD1767 Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

transistor 2sb1238

Abstract: 2sb1238
Contextual Info: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5

2SB1189

Abstract: 2SB1238 2SD1767 2SD1859 T100
Contextual Info: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5

2Sb1238

Abstract: 2SB1189 2SD1767 2SD1859 T100 ic T100 bd marking code transistor ROHM
Contextual Info: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5

2SB1238

Contextual Info: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Dimensions (Unit : mm) 2SB1189 4.0 1.5 0.4 1.0 Collector power dissipation

marking BDR

Abstract: 2SB1189 2SD1767 Transistor 2SD1767 MARKING 82
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1189 TRANSISTOR PNP FEATURES z High breakdown voltage z Complements to 2SD1767 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO

2SD1859

Abstract: 2SB1189 2SB1238 2SD1767 T100 sc621
Contextual Info: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO

2SD1859

Contextual Info: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO

2sd1767

Abstract: 2SD1859
Contextual Info: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO

2SD1859

Abstract: 2SD1767 2SB1189 2SB1238 T100
Contextual Info: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO

2SB1238

Abstract: 2SB1189 2SD1767 2SD1859 T100
Contextual Info: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Dimensions (Unit : mm) Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5 0.4 1.0 VCBO −80 Collector-emitter voltage

Contextual Info: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors Medium Power Transistor —80V, —0.7A I 2SB1189 / 2SB1238 / 2SB889F •Features •A b s o lu te maximum ratings ( T a ^ î S t ) 1 ) High breakdown voltage and high current. {—60V, —0.7A)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1767 TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage and Current z Excellent DC Current Gain Linearity z Complement the 2SB1189 2. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1189 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z High breakdown voltage z Complements to 2SD1767 2. COLLECTOR 1 2 3 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

marking 07 sot89

Contextual Info: 2SB1189 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 B 2.6 4.25 2.4 3.75 Features — — 0.8 MIN High breakdown voltage Complements to 2SD1767 0.44 0.37 Parameter B 0.53 0.48 0.40 2x) 0.35 1.5 3.0 Dimensions in inches and (millimeters)

ic 11105 h

Contextual Info: h 7 > V ^ ^/Transistors 2SD1767 2SD1767 T £ $ * V T \ r f \ s —yf& NPN Epitaxial Planar NPN Silicon Transistor fl£U5fc 2jiil§ffl/Low Freq. Power Amp. • feft 1) • W f^ jilS l/D im e n sio n s Unit : mm) P C = 2 W T * 5 (40X 40X0.7mm * 7 $ . y

2SD1659

Abstract: 2SB689F 2sb123b
Contextual Info: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors I Medium Power Transistor —80V, —0.7A 2 S B 1 189 / 2 S B 1 238 / 2 S B 8 8 9 F •F e a tu re s • A b s o lu t e m axim um ratings (T a = 2 5 'C ) 1 ) High breakdown voltage and high current. (—80V, - 0.7A)

rds035

Abstract: rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198
Contextual Info: Standard Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Small signal type MOSFET RHU002N06 Medium Power Bipolar Transistors 0.5W-1.2W MPT3 Package Description CPT3 MPT3 Item Application Driver Low VCE (sat) High hFE High voltage SW High voltage-High speed SW

2SC5053 NPN

Abstract: B-2180
Contextual Info: M* Transistors/Surface I' tr4 » w - Mounting Type • MPT3 • CPT3 Package MPT3 series includes mini molded power transistor models rated at Pc=0.5 to 2 W SC-62 ; CPT F5 series are surface mounting power transistors. Part No. Application PNP 2S02167 - -

Contextual Info: 2SD1767 / T ransistors c n i 7 6 7 y '; ^ > h 7 > y ^ 4 , ^ ;tHll,i ffl/M e d iu m Power Amp. Epitaxial Planar NPN Silicon Transistor npn Pc = 2 W T & -S 40X 4 0 X 0 .7 m m -b 7 5 2 isiMEE, 7 • T tiiG S /D im e n s io n s (U n it: mm) so- yi v; V Ui ~r

2SD1767

Contextual Info: 2SD1767 N ~7> V 7. £ /Transistors O O Q 4 I t f ^ d r v 7 7 ; u y u - ^ N # w f P N Epitaxial Planar NPN Silicon Transistor f i ^ j 5 S ^ l i ,H ffl/L o w Freq. Power Amp. • « * 1) = l U ? * j a £ , PC= 2 W T 'S - 5 40 X 4 0 X 0.7mm Hz 5 5 y ? S H 3 ifN i) o

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

l289

Contextual Info: Is 7 > V X $ /Transistors 2SB1189 /M e d iu m Power Amp. Epitaxial Planar PNP Silicon Transistor • 4^JfiTj-;£[21/D iin e n s io n s Unit : mm 1 ) = i u ' ? i i j a ^ P c = 2 w r ' * 5 [, (4 0 x -7 40X0.7mm-tz 7 S 2) ra R E E , V ifc V ceo= - 80V, X