TRANSISTOR 4221 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

2N422A

Abstract: 4221
Contextual Info: *2 N 4220, A *2 N 4221, A *2 N 4222,A FIELD-EFFECT TRANSISTOR, SILICON. N CHANNEL TRANSISTOR A E FF E T DE CHAMP, SILIC IU M . CANAL N % Preferred device Dispositif recommandé - LF amplification A m plifica tio n BF 'DSS r 21s F 100 Hz 0 ,5 - 3 mA 2 - 6 mA

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

T2721

Abstract: BFX29 CTC 880 transistor d0422 bfx29 transistor IEC134 Silicon Epitaxial Planar Transistor philips 5BE1
Contextual Info: BFX29 T - Z.7 - Z J PHILIPS INTERNATIONAL SbE D • 711005b 0GM2EGb 5Ô7 ■ P H I N SILICON PLANAR EPITAXIAL TRANSISTOR £ PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter

4221 transistor datasheet

Abstract: smd transistor NJ "photo transistor" ir PHOTO TRANSISTOR
Contextual Info: NEW Dialight Surface Mount LED IR Photo Transistor 1.91 [.075] .806 [.032] 597-4221-2xx 2.79 [.110] PART NO.* 597-4221-2xx TAPING SPECIFICATIONS rear side of tape 2.21 [.087] 2.00 [.079] .806 [.032] 4.00 [.157] 1.00 [.039] 3.20 [.126] 3.40 [.134] 8.00

42181

Contextual Info: Silicon Low Noise Bipolar Transistors Transistor Selection Guide Series Geometry Nominal fT GHz Nominal Optimum Noise Figure at Current (mA) 42161 42111 42141 42151 42000 42197 42020 42051 42217 42120 42181 72 60 63 63 60 60 20 55 55 70 02 7.0 5.5 4.5 4.5

4-221

Abstract: transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET
Contextual Info: National Semiconductor" May 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

TA17444

Contextual Info: IRF710 Semiconductor Data Sheet June 1999 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

M38527

Abstract: M38527/2-05D M38527/01-036D A55485/02-032D M38527/06-022D M38527/3-01D M38527/02-001D M38527/02-005D M38527/03-015N M38527/1-030D
Contextual Info: molded power transistor mounts Material Specifications: Nylon, per ASTM D 4066 PA111 UL Rated 94V-2 Oxygen Rating Index: Over 28% Standard Drawing Tolerances: unless otherwise indicated Fractions: +_ 1/64 (0.4) .XX = +_ 0.01 (0.25) + _ 0.10 (2.5) .X = .XXX = +_ 0.005 (0.13)

Contextual Info: May 1996 national Semiconductor~ NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode • N-Channel 3.5A, 20V, RDS 0N| = 0.10 @ VGS = 10V. power field effect transistors are produced using

2N4220A

Abstract: 4221 transistor 2N4221A 2N4220 SMP4220
Contextual Info: B 10 9 -9 7 2N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222A N -C H A N N E L SILICON JUNCTION FIELD-EFFECT TRANSISTOR • • • • Absolute maximum ratings at T* = 25°C MIXERS OSCILLATORS VHF AMPLIFIERS SMALL SIGNAL AMPLIFIERS Reverse Gate Source & Reverse Gate Drain Voltage

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

irf710 datasheet

Abstract: IRF710 and its equivalent IRF710 TB334
Contextual Info: IRF710 Data Sheet June 1999 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

4222C

Abstract: 2N7079
Contextual Info: 2N7079 f X S iB c o n ix in c o rp o ra te d P-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW PRODUCT SUMMARY V fDS(ON) (n) (A) -100 0.210 -17 V (BR)DSS • d 2 SOURCE 3 GATE Case Isolated A BSO LU TE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

4221 transistor

Abstract: 2n4220 to72 - 2N4221 2N4222 2N4221 transistor 4221 2N4220A 2N4221 transistor 2N4221A 4222A
Contextual Info: Philips Components Data sheet status Preliminary specification date of issu« October 1990 2N4220/4220A/4221/4221A/ 4222/4222A N-channel J-FETs PINNING - TO-72 FEATURES PIN 1 2 3 4 • High gain in VHF range • Low receiver noise figure. DESCRIPTION PIN CONFIGURATION

2N4220

Abstract: 2N4222 2N4221 transistor
Contextual Info: Philips Components Data sheet status Preliminary specification date of issue October 1990 2N4220/4220A/4221/4221A/ 4222/4222A N-channel J-FETs FEATURES • High gain in VHF range • Low receiver noise figure. DESCRIPTION PINNING - TO-72 1 2 3 4 drain source

2n4221

Abstract: 2n4220 2N4222 2N4221 transistor Philips MBB 2N4220A 4221 transistor 2N4221A 2N4222A to72 - 2N4221
Contextual Info: 711Qô2b OObôObfl 2 0 2 • P H I N Philips Semiconductors Data sheet status Preliminary specification date of issue October 1990 2N4220/4220A/4221/4221A/ 4222/4222A N-channel J-FETs FEATURES PINNING - TO-72 • High gain in VHF range • Low receiver noise figure.