TRANSISTOR 600V 500A Search Results

transistor 600v 500a

Abstract: QM500HA-H E80276 Mitsubishi transistor 500a diode
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM500HA-H HIGH POWER SWITCHING USE INSULATED TYPE QM500HA-H • • • • • IC Collector current . 500A VCEX Collector-emitter voltage . 600V hFE DC current gain. 750

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM500HA-H HIGH POWER SWITCHING USE INSULATED TYPE QM500HA-H lc Collector current. .500A V c e x Collector-emitter voltage. . 600V hFE DC current gain. 750 Insulated Type UL Recognized

transistor 1002

Contextual Info: MITSUBISHI TRANSISTOR MODULES j QM500HA-H | HIGH POWER SWITCHING USE INSULATED TYPE QM500HA-H • lc Collector cu rre n t. 500A • VCEX Collector-emitter vo ltag e .600V • hFE DC current g a in . 750

qm300ha-h

Abstract: transistor b 1560 QM300HA-HB E80276
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM300HA-HB HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-HB • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 600V hFE DC current gain. 750

IRFI840G

Abstract: C-150 IRGIB7B60KD
Contextual Info: PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

IRFI840G

Abstract: ic MARKING QG C-150 IRGIB7B60KD
Contextual Info: PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

B1370

Abstract: B1370 transistor r b1370 transistor transistor b1370 b1370, transistor b1370 e
Contextual Info: PD - 94620A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

C-150

Abstract: IRFI840G IRGIB7B60KD
Contextual Info: PD - 94620 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

Contextual Info: PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

Contextual Info: PD - 95195 IRGIB7B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

Contextual Info: @ M ITEL GP350MHB06S Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes August 1998 version, DS4923-3.0 DS4923 -3.1 D ecem ber 1998 The GP350MHB06S is a dual switch 600V robust n channel enhancem ent m ode Insulated G ate Bipolar Transistor IGBT module. Designed for low power loss

ge traction motor

Contextual Info: GP500LSS06S M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R DS4324 - 4.4 Decem ber 1998 S upersedes July 1998 version, DS4324 - 4.3 The GP500LSS06S is a single switch 600V, robust n channel e nhancem ent mode insulated gate bipolar transistor IGBT . Designed for low power loss, the module

IGBT 3300V 250A

Abstract: DIM250WKS06-S000 DIM250WKS06 DIM250WLS06-S000 DIM250WKLS06-S000 ups 700 600V dc IGBT
Contextual Info: DIM250WLS06-S000 DIM250WLS06-S000 IGBT Chopper Module Lower Arm Control PDS5731-1.0 February 2004 FEATURES KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE(sat)* (typ) ■ Low Forward Voltage Drop (max) 250A Isolated Base IC ■ IC(PK) (max) 500A

transistor 600v 500a

Abstract: DIM500BSS06-S000
Contextual Info: DIM500BSS06-S000 DIM500BSS06-S000 Single Switch IGBT Module DS5677-1.4 April 2006 LN24534 FEATURES KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE(sat)* (typ) ■ Low Forward Voltage Drop Isolated Base IC (max) 500A ■ IC(PK) (max) 1000A

MJ 800

Abstract: CIRCUIT DIAGRAM UPS IGBT 3300V 250A lm 3886 ac motor speed control circuit diagram with IGBT bi-directional switches IGBT DC MOTOR SPEED CONTROL USING IGBT HALF BRIDGE MOTOR MODULE IC 4022 ups circuit diagram using igbt
Contextual Info: DIM250WHS06-S000 DIM250WHS06-S000 Half Bridge IGBT Module PDS5676-1.3 February 2004 FEATURES KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat * (typ) ■ Low Forward Voltage Drop (max) 250A Isolated Base IC ■ IC(PK) (max) 500A APPLICATIONS

DIM250WKS06-S000

Abstract: IGBT 3300V 250A DIM250WKS06 pwm ac chopper CIRCUIT DIAGRAM UPS bi-directional switches IGBT C 3886 DC MOTOR SPEED CONTROL USING chopper DC MOTOR SPEED CONTROL USING IGBT dc to dc chopper using igbt
Contextual Info: DIM250WKS06-S000 DIM250WKS06-S000 IGBT Chopper Module Upper Arm Control PDS5730-1.0 February 2004 FEATURES KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE(sat)* (typ) ■ Low Forward Voltage Drop (max) 250A Isolated Base IC ■ IC(PK) (max) 500A

GP350MHB06S

Contextual Info: GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces April 2002 version, DS4923-6.0 FEATURES DS4923-6.1 july 2002 KEY PARAMETERS • n - Channel VCES 600V ■ High Switching Speed VCE sat * (typ) 2.0V ■ Low Forward Voltage Drop (max) 500A Isolated Base

GP350MHB06S

Abstract: DS4923-5
Contextual Info: GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces January 2000 version, DS4923-4.0 FEATURES DS4923-5.0 October 2001 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat (typ) 2.0V ■ Low Forward Voltage Drop (max) 500A Isolated Base

GP350MHB06S

Contextual Info: GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces October 2001 version, DS4923-5.0 FEATURES DS4923-6.0 April 2002 KEY PARAMETERS • n - Channel VCES 600V ■ High Switching Speed VCE sat * (typ) 2.0V ■ Low Forward Voltage Drop (max) 500A Isolated Base

GP350MHB06S

Contextual Info: GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces April 2002 version, DS4923-6.0 FEATURES DS4923-6.1 july 2002 KEY PARAMETERS • n - Channel VCES 600V ■ High Switching Speed VCE sat * (typ) 2.0V ■ Low Forward Voltage Drop (max) 500A Isolated Base

DIM600BSS12-A000

Contextual Info: DIM600BSS12-A000 DIM600BSS12-A000 Single Switch IGBT Module Replaces December 2003 version, issue DS5692-1.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate PDS5692-2.0 February 2004 KEY PARAMETERS VCES

Contextual Info: DIM600BSS12-A000 DIM600BSS12-A000 Single Switch IGBT Module DS5692-1.3 December 2003 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V

DIM600BSS12-A000

Abstract: transistor 600v 500a
Contextual Info: DIM600BSS12-A000 DIM600BSS12-A000 Single Switch IGBT Module Replaces February 2004 version, issue PDS5692-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5692-3.0 June 2004 KEY PARAMETERS VCES typ

DIM600BSS12-A000

Contextual Info: DIM600BSS12-A000 DIM600BSS12-A000 Single Switch IGBT Module DS5692-3.1 June 2007 LN25362 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES VCE(sat)* (typ) IC (max) IC(PK) (max) 1200V