TRANSISTOR 9050 Search Results

TRANSISTOR 9050 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 9050 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SB775 Abstract: 2SB77 2SD895 1116MW Contextual Info: Ordering number:ENN679F 2SB775 : PNP Epitaxial Planar Silicon Transistor 2SD895 : NPN Triple Diffused Planar Silicon Transistor 2SB775/2SD895 85V/6A, AF 35W Output Applications Package Dimensions unit:mm 2022A [2SB775/2SD895] 15.6 14.0 3.2 3.5 4.8 2.0 1.3	Original	ENN679F 2SB775 2SD895 2SB775/2SD895 2SB775/2SD895] 2SB775 2SB77 2SD895 1116MW	PDF
2SC4615 Abstract: 2044B 2SA1772 Contextual Info: Ordering number:ENN3398A 2SA1772 : PNP Epitaxial Planar Silicon Transistor 2SC4615 : NPN Triple Diffused Planar Silicon Transistor 2SA1772/2SC4615 High-Voltage Driver Applications Features Package Dimensions • Large current capacity IC=1A . · High breakdown votlage (VCEO≥400V).	Original	ENN3398A 2SA1772 2SC4615 2SA1772/2SC4615 VCEO400V) 2045B 2SA1772/2SC4615] 2044B 2SC4615 2044B 2SA1772	PDF
Contextual Info: AjtÁ CW Power Transistor PH2323-6 Preliminary 6.0 Watts, 2.30 GHz Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors	OCR Scan	PH2323-6 513MM) 5b422D5 00013D3	PDF
TRANSISTOR zo 109 ma Abstract: transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856 Contextual Info: Linear Accelerator Pulsed Power Transistor PH2856-22 22 Watts, 2.856 GHz, 12 jlis Pulse, 10% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • High Efficiency Interdigitated Geometry	OCR Scan	PH2856-22 TT50M50A ATC100A TRANSISTOR zo 109 ma transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856	PDF
transistor c 3206 Abstract: transistor j7 Contextual Info: Afa R adar Pulsed Power Transistor PH0404-7EL 7 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Emitter Configuration • Broadband Class C Operation • Reliable Fishbone Geometry	OCR Scan	PH0404-7EL Sb4220S 5b42205 0DQ1175 transistor c 3206 transistor j7	PDF
T4 0450 Abstract: transistor j8 Contextual Info: Radar Pulsed Power Transistor A ß PH0404-30EL 30 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry	OCR Scan	PH0404-30EL Sb42E05 Sb422DS D001177 T4 0450 transistor j8	PDF
MAPRST2729-170M Abstract: 15 w RF POWER TRANSISTOR NPN VCC36 Contextual Info: MAPRST2729-170M RADAR PULSED POWER TRANSISTOR 170 Wpk, 2700 - 2900 MHz, 100 s Pulse Width, 10% Duty Cycle Preliminary Specification, Rev 03/30/2005 OUTLINE DRAWING FEATURES • Designed for ATC Radar Applications • NPN Silicon Microwave Power Transistor	Original	MAPRST2729-170M MAPRST2729-170M 15 w RF POWER TRANSISTOR NPN VCC36	PDF
transistor yb Abstract: M220S transistor t 04 27 Contextual Info: Afa Radar Pulsed Power Transistor PH0404-1OOEL 100 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry	OCR Scan	PH0404-1OOEL M220S PH0404-lOOEL 5b422DS transistor yb transistor t 04 27	PDF
omni spectra sma Abstract: transistor n03 PH2856 Contextual Info: Linear Accelerator Pulsed Power Transistor PH2856-3 3 Watts, 2.856 GHz, 12 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry	OCR Scan	PH2856-3 Sb42205 0D013S3 TT50M50A ATC100A Sb4E20S Q0D1324 omni spectra sma transistor n03 PH2856	PDF
VCC36 Contextual Info: Afa Avionics Pulsed Power Transistor PH0912-40 40 Watts, 960-1215 MHz, 7 Features Preliminary Pulse, 50% Duty Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation	OCR Scan	PH0912-40 5b42SD5 VCC36	PDF
2SD896 Abstract: 2SB776 Contextual Info: Ordering number:ENN678F 2SB776 : PNP Epitaxial Planar Silicon Transistor 2SD896 : NPN Triple Diffused Planar Silicon Transistor 2SB776/2SD896 100V/7A, AF 40W Output Applications Features Package Dimensions • Capable of being mounted easily because of onepoint fixing type plastic molded package	Original	ENN678F 2SB776 2SD896 2SB776/2SD896 00V/7A, 2SB776/2SD896] 2SB776 2SD896. 2SD896	PDF
transistor 355 Abstract: SHM-2E CC 1215 Contextual Info: Afa Avionics Pulsed Power Transistor PH0912-2.5 Preliminary 2.5 Watts, 960-1215 MHz, 7 ¿is Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation	OCR Scan	PH0912-2 ShM2E05 transistor 355 SHM-2E CC 1215	PDF
Contextual Info: Ma Avionics Pulsed Power Transistor PH0912-20 Preliminary 20 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation	OCR Scan	PH0912-20 5b4220S	PDF
F300 Contextual Info: CW Power Transistor A fa PH0303-8 8.0 Watts, 300-325 MHz Features • • • • • • • Outline Drawing NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation Diffused Emitter Ballasting Resistors Gold Metallization System	OCR Scan	PH0303-8 5b422D5 0DD1172 F300	PDF

VCO 1.4 GHz Contextual Info: PH3135-80M Radar Pulsed Power Transistor Preliminary 80 Watts, 3.10-3.50 GHz, 100 us Pulse, 10% Duty Features • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation New Power Dense Interdigitated Geometry	OCR Scan	PH3135-80M SbM250S VCO 1.4 GHz	PDF
MAPHST0034 Abstract: MAPHST MAPHS VCC36 9-GHz c 129 transistor Contextual Info: MAPHST0034 RADAR PULSED POWER TRANSISTOR 129 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY Datasheet 032803 ECRIEE OUTLINE DRAWING FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry	Original	MAPHST0034 29Wpk, MAPHST0034 MAPHST MAPHS VCC36 9-GHz c 129 transistor	PDF
a 103 m Transistor Abstract: A 103 TRANSISTOR transistor PD j6 1030 mhz transistor j6 PH1090-75L f103 TRANSISTOR 75 Contextual Info: PH1090-75L AVIONICS PULSED POWER TRANSISTOR 75 WATTS, 1030 - 1090 MHz, 250µs PULSE, 10% DUTY M/A-COM PHI, INC. FEATURES OUTLINE DRAWING • Designed for Pulsed Avionics Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration	Original	PH1090-75L DS181 a 103 m Transistor A 103 TRANSISTOR transistor PD j6 1030 mhz transistor j6 PH1090-75L f103 TRANSISTOR 75	PDF
1030-1 Abstract: PH1090-15L Contextual Info: PH1090-15L AVIONICS PULSED POWER TRANSISTOR 15 WATTS, 1030 - 1090 MHz, 250µs PULSE, 10% DUTY M/A-COM PHI, INC. FEATURES OUTLINE DRAWING • Designed for Pulsed Avionics Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration	Original	PH1090-15L DS180 1030-1 PH1090-15L	PDF
VCC36 Contextual Info: Ajfa Radar Pulsed Power Transistor PH2729-120M Preliminary 120 Watts, 2.70-2.90 GHz, 100 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation	OCR Scan	PH2729-120M SL4220S VCC36	PDF
100 N 37 Contextual Info: CW Power Transistor PH0303-37 37 Watts, 300-325 MHz Features Outline Drawing • NPN Silicon Power Transistor • Common Emitter Configuration • Class AB Linear Operation • Diffused Emitter Ballasting Resistors • Gold Metallization System • Internal Input Impedance Matching	OCR Scan	PH0303-37 SL422DS 100 N 37	PDF
Contextual Info: A ßi Avionics Pulsed Power Transistor PH0912-150 Preliminary 150 Watts, 960-1215 MHz, 7 ys Pulse, 50% Duty Features • • • • • • • • • Outline Drawing Designed for JTIDS Applications NPN Silicon Microwave Power Transistor Common Base Configuration	OCR Scan	PH0912-150	PDF
transistor f20 Contextual Info: Aß Oscillator Power Transistor PH2022-1OSC 1 Watt, 2.00-2.20 GHz Outline Drawing Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Emitter Configuration Designed for S-Band Applications Interdigitated Geometry Diffused Emitter Ballasting Resistors	OCR Scan	PH2022-1OSC transistor f20	PDF
Contextual Info: Afa Avionics Pulsed Power Transistor PH 1090-80L Preliminary 80 Watts, 1030-1090 MHz, 250 us Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation	OCR Scan	1090-80L	PDF
PH1417-200S Abstract: F 140 F140 C5 155 10 PH1417 Contextual Info: A/jtA PH1417-200S Avionics Pulsed Power Transistor Preliminary 200 Watts, 1.40-1.70 GHz, 10 jlis Pulse, 10% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse Avionics Applications NPN Silicon Microwave Power Transistor	OCR Scan	PH1417-200S Sb4220S DDD12L PH1417-200S F 140 F140 C5 155 10 PH1417	PDF

TRANSISTOR 9050 Search Results

TRANSISTOR 9050 Result Highlights (5)

TRANSISTOR 9050 Datasheets Context Search

2SB775

2SC4615

TRANSISTOR zo 109 ma

transistor c 3206

T4 0450

MAPRST2729-170M

transistor yb

omni spectra sma

VCC36

2SD896

transistor 355

F300

VCO 1.4 GHz

MAPHST0034

a 103 m Transistor

1030-1

VCC36

100 N 37

transistor f20

PH1417-200S