TRANSISTOR AH 2 Search Results

Contextual Info: 2SB1197K Transistor, PNP Features Dimensions Units : mm • available In SMT3 (SMT, SC-59) package • package marking: 2SB1197K; AH-*, where ★ is hFE code • 2SB1197K (SMT3) 1.9±0.2 low collector saturation voltage 0.96 a (2 )[ 2.4 V CE(sat) - “ ° - 5 v f o r

la 7518

Abstract: TFK 450 BCW60C BCW60D BCW60
Contextual Info: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

Contextual Info: na. TELEPHONE: 979 378*2922 (212) 227-8008 FAX: (973) 3784880 20 STERN AVE. SPfllNQRELD, NEW JERSEY 07081 U.SA 2N4997 N-P-N SILICON TRANSISTOR *AU JEDEC TO-92 DIMENSIONS AND NOTES ARE APPLICABLE AH pIMENilONi IN INCHII —MK- 0.010 (NOT! A) .• N —H o'«> + A^—i r~H_

LM114

Abstract: LM114D Monolithic Transistor Pair LM114A LM114AH LM114H alc100
Contextual Info: ïïM M m \ll LM114IH, LM114A/AH Dual NPN Monolithic Transistor GENERAL DESCRIPTION FEATURES These devices contain a pair of junction-isolated NPN transis­ tors fabricated on a single silicon substrate. This m onolithic structure makes possible extrem ely tig ht parameter matching

ITCH725D

Contextual Info: TOSHIBA -CDISCRETE/OPTOJ- 9097250 TOSHIBA ^aHììln CDI S C R E T E / O P T O “H DeTJ B O T O S O 990 16647 D 0 1 L t 47 b DT-3Ì-I3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 3 5 5 SILICON N CHANNEL MOS TYPE <7T-MOS ) TECHNICAL DATA INDUSTRIAL APPLICATIONS

transistor Cd 18 p

Abstract: ic MARKING FZ 2SA1759 7028 TRANSISTOR marking 7T transistor
Contextual Info: 2SA1759 Transistor, PNP Features D im ensions Units : mm • av a ila b le in M P T 3 (M PT, S C -6 2 ) p a cka g e • p a c k a g e m arking: 2 S A 1 7 5 9 ; AH-*, w h ere ★ is hFE co d e • high breakdow n voltage, 2SA1759 (MPT3) V ceo = “ 400 V

2n7000 equivalent

Abstract: transistor 2n7000 field effect transistor 2n7000 N-Channel Enhancement Mode Field Effect Transistor Transistor AH 10 equivalent of 2n7000 TRANSISTOR AH TRANSISTOR2N7000
Contextual Info: N-Channel Enhancement Mode Field Effect Transistor 2N7000 N-Channel Enhancement Mode Field Effect Transistor Features • • • • • High density cell design for low RDS ON Voltage controlled small signal switch Rugged and reliable High saturation current capability

Contextual Info: EPSON PF400-07 SCI7630M/C Series Switching Regulator I DESCRIPTION •Step-up Switching Regulator 1.5V 2.0, 2.2, 2.35, 2.4, 2.7, 2.8, 3.0, 3.1, 3.5, 3.7, 4.2 ,5.0V •L o w Operating Voltage(Min 0.9V) •Voltage Detecting function, Battery Back-up function

VARTA 4006

Abstract: alkaline varta TRANSISTOR AH varta Transistor AH 10 LR6 varta varta alkaline alkaline varta 4006
Contextual Info: 4006 VARTA Industrial Data Sheet Recommended Application: Universal Type Designation Designation IEC System 4006 LR6 Zn-MnO2 Alkaline Shelf Life (Coding)* 5 years Nominal Voltage [V] Typical Capacity C [mAh] Permissible Temperature Range 1.5 2600 (discharge with high-resistance)

Contextual Info: MMBTA63/64 SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. MAXIMUM RATINGS Ta=25°C DIM CHARACTERISTIC A B SYMBOL Collector-Base MMBTA63/64 Voltage C ollector-E m itter MMBTA63/64 Voltage Em itter-B ase Voltage

2N4400

Abstract: 2n4401 amplifier 2N4401 transistor 2N4400 2N4401 NPN transistor 2n4400 2N4401
Contextual Info: Small Signal General Purpose Transistors NPN 2N4400/2N4401 Small Signal General Purpose Transistors (NPN) Features • NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications • RoHS Compliance TO-92 Mechanical Data Case: TO-92, Plastic Package

LP298X

Abstract: LM29XX variable voltage regulator LM317 LM3420 Regulated Power Supply Schematic Diagram lm317 LM1117 LM317 LM431 LMV431 LP2981
Contextual Info: Focus on Voltage Regulators Muna Acosta Applications Manager Standard Analog Products October 30, 2002 Good morning. Welcome to today's Web cast on voltage regulator. My name is Muna Acosta. I'm the Application Manager for the Standard Analog Group at National

2n3904

Abstract: 2N3903 transistor 2N3904 plastic general purpose transistors npn
Contextual Info: Small Signal General Purpose Transistors NPN 2N3903/2N3904 Small Signal General Purpose Transistors (NPN) Features • NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications • RoHS Compliance TO-92 Mechanical Data Case: TO-92, Plastic Package

2N2464

Abstract: transistor 2n2270 2N6369 D 756 transistor
Contextual Info: GENERAL TRANSISTOR CORP 2ME D • BTaflODl 00QD074 0 ■ General Transistor Corporation "T 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL S IG N A L TRANSISTORS NPN General Purpose Typ» No,

TRANSISTOR AH-16

Abstract: AH-16 transistor Transistor AH10 AH16 ah-16 AH16 transistor AH-16 npn TRANSISTOR AH-10 AH-16 on semiconductor AH MARKING SOT223
Contextual Info: BCP53T1 Series Preferred Devices PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

TRANSISTOR AH-16

Abstract: AH MARKING SOT223 AH-16 on semiconductor AH-16 transistor AH16 SOT223 sot 223 marking code AH AH-16 npn TRANSISTOR AH-10 ah-16 AH16 transistor
Contextual Info: BCP53T1 Series Preferred Devices PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

Contextual Info: Transistors Digital Transistor Common Emitter Dual Transistors U M G 2 N / F M 2 A G •F e a tu re s 1) Two DTC144E digital transistors in a UMT, SMT package. 2) M ounting co st and area can be cut in half. •S tru c tu re Epitaxial planar type NPN silicon transistor

power 22E

Abstract: BCX70GR TRANSISTOR AH BCX70 BCX70G BCX70H BCX70HR BCX70J BCX70JR BCX70K
Contextual Info: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR BCX70 BCX70 ISSUE 2 – FEBRUARY 95 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. Collector-Emitter Breakdown Voltage V(BR)CEO 45 5 Emitter-Base Breakdown Voltage

Multimeter dmm 850

Abstract: transistor number D 2498
Contextual Info: Low Cost Handheld DMM’s ߜ ߜ ߜ ߜ ߜ ߜ ߜ ߜ GS-Mark EN61010-1 Approval, Over-Voltage Category II 600 Vdc/Vac; Pollution Degree II Models: HHM26 and HHM28 have RS-232 Interface Safety Input Jacks Logic Probe Tester Models: HHM15, HHM20, HHM23 Temperature Measurement

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBTA13 l^ E 00 072c10 4 | O J NPN EPITAXIAL SILICON TRANSISTOR _ L DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: S A M S UN G SEMICONDUCTOR INC 14E D I 7^4142 0007370 2 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA64 T -2 9 -2 9 DARLINGTON TRANSISTOR • C ollector-Em itter Voltage: Vc*s =30V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS6522 D | 7*^4145 0007327 1 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto =25V • Collector Dissipation: P c max =625mW A BSO LU TE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT5086 14E D I 0007573 M | PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltape Emitter-Base Voltage Collector Current Collector Dissipation

Contextual Info: SAMSUNG SEMICONDUCTOR I NC 14E | 7*11,4142 0007^^6 «1 | T - t f - * ? MMBTA63 PNP EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C C h aracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage