TRANSISTOR AJ Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: AjtÁ CW Power Transistor PH2323-6 Preliminary 6.0 Watts, 2.30 GHz Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors

Contextual Info: bRE J> N AJ1ER PHILIPS/DISCRETE bbS3T31 DD3DS^S Dlfi * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

VCC36

Contextual Info: Ajfa Radar Pulsed Power Transistor PH2729-120M Preliminary 120 Watts, 2.70-2.90 GHz, 100 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

BSD12

Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor
Contextual Info: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

tlc 1451

Abstract: TRANSISTOR T-03 13MM ATC100A PH2931-20M Rogers 6010.5
Contextual Info: AjûKim m an AM P company Radar Pulsed Power Transistor, 20W, IOOjis Pulse, 10% Duty PH2931-20M 2.9 - 3.1 GHz V2.00 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

sot69

Contextual Info: Central S e m ico n d u cto r Corp. CXT5401 DESCRIPTION: PNP SILICON TRANSISTOR TN> CENTRAL SEMICONDUCTOR CXTS401 type is PN Pstlicon transistor manulaciurod by tho cp<tax>aJ planar process, epoxy molded in a surface mount package, destgnod for high vortjgo am pifiei applications.

j48 transistor

Abstract: TRANSISTOR j4 ASI10545 AJT015
Contextual Info: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm

Contextual Info: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm

AJT150

Abstract: ASI10548
Contextual Info: AJT150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AJT150 is a common base RF power transistor primarily designed for pulsed avionics applications such as, mode-s TCAS and JTIDS. A 4x .062 x 45° 2xB C F E D G 2xR FEATURES:

transistor a13

Abstract: A13 transistor
Contextual Info: ALLEGRO MICROSYSTEMS INC T3]> ] • 0504330 G0G3b37 4 P R O CESS A JA T -^ l "O I Process AJA NPN Small-Signal Transistor Process A JA is a double-diffused epitaxial silicon transistor designed for use in medium-power, general-purpose amplifiers and as a switch for line volt­

D 1651 transistor

Abstract: AJT030 ASI10546
Contextual Info: AJT030 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N O A The ASI AJT030 is a Class-c RF power transistor, designed for JTIDS pulsed output & driver applications from 960 to 1215 MHz. B E K D C .062 x 45° M G FEATURES: F Ø.120

Contextual Info: Philips Semiconductors Product Specification POwerMOS transistor BUK543-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

la 7518

Abstract: TFK 450 BCW60C BCW60D BCW60
Contextual Info: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

AJT085

Abstract: ASI10547
Contextual Info: AJT085 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG The ASI AJT085 is an RF power transistor, designed for pulsed avionics applications with high duty cycle. A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B ØD C E F FEATURES: G H • 960-1215 MHz

automotive ignition tip162

Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —

MJE15020

Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment

BUS48AP

Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK453-60B data

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

2SA1398

Abstract: 2SC3580
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1398 FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1398 is a silicon PNP epitaxial type transistor designed with high OUTLINE DRAWING ¿5.1 MAX collector current, small VcE(sai).

BU108

Abstract: 2SC1629 equivalent BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times: