TRANSISTOR AJ 16 Search Results

sot69

Contextual Info: Central S e m ico n d u cto r Corp. CXT5401 DESCRIPTION: PNP SILICON TRANSISTOR TN> CENTRAL SEMICONDUCTOR CXTS401 type is PN Pstlicon transistor manulaciurod by tho cp<tax>aJ planar process, epoxy molded in a surface mount package, destgnod for high vortjgo am pifiei applications.

la 7518

Abstract: TFK 450 BCW60C BCW60D BCW60
Contextual Info: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

Contextual Info: CSD401 CDU CSD401 NPN PLASTIC POWER TRANSISTOR Complementary CSB546 TV Vertical Deflection Output Applications °{“ dj =. AJ. L * DIM A B C E F G H J K L M N MIN MAX 16,51 10.67 4 .8 3 0.90 1,15 1.40 3,75 3,68 2,29 2,79 2,54 3,43 0,56 12,70 14,73 6,35 2,92

Contextual Info: C4SC8 C45C8 PNP PLASTIC POWER TRANSISTOR Complementary C44C series General Purpose Applications E i„ _ Ì ° fl AJ. DIM A 8 C D E F G H J K L M N MIN MAX 16,51 10.67 4.83 0.90 1.15 1,40 3,75 3.88 2,29 2.79 2,54 3.43 0.56 12.70 14,73 6,35 2,03 2,92 31,24

Contextual Info: MOTOROLA Order this document by MPQ2369/D SEMICONDUCTOR TECHNICAL DATA Quad Switching Transistor MPQ2369 NPN Silicon Motorola Preferred Device lÿl liai Pp Pii Fp R I RI LyvJ L/ aJ NPN ÍY H rv i Lil H I LU liJ LàJ LU LiJ MAXIMUM RATINGS Rating Symbol Value

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 305 N channel Enhancement mode Avalanche-rated Type BUZ 305 * DS 800 V Aj 7.5 A D S on 1 .0 Í1 Package 1> O rdering Code TO-218 AA C67078-S3134-A2 M axim um Ratings Parameter Sym bol Continuous drain current, Tc = 31 "C

upa74ha

Abstract: UPA74 PA74H gw 348 PA74HA k 2445 transistor
Contextual Info: NEC Aj i ï T / \ W V -7 9 Com pound Transistor f x N L it ¿¿PA74HA P N X + □ ] h I M ift fé S H f& K iJ t I B fll NPN Silicon Epitaxial Compound Transistor Differential Amplifier #Ä /FEA TU RES O 1 chip ffîiè 'C Jb h flìsb , - 4 T 1 Ë J V B E = 2 mV T Y P . )

BA6196FP

Abstract: HSOP28 035101
Contextual Info: Optical disc ICs o 4-channel BLT driver for CD players aj o Q. o BA6196FP The BA6196FP is an IC designed CD players and has an internal 4-channel BTL driver, 5V regulator attached PNP transistor required , standard operational am plifier and a therm al shutdow n feature. The driver has gain adjustm ent

2SC2958

Abstract: transistor AE 2SC2959 2SA1221 F0246
Contextual Info: NEC Aj m^Tjvrx '> i; =3 > h = 7 > i> 7 .9 Silicon T ra n sisto rs 2 S C 2 9 5 8 ,2959 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier ^•JgH/PACKAGE DIMENSIONS # g/FEA TU RES oTViDSïtfilèK K7 -Í 7", ¡ti* , MIE, is Ja I S t i . \f y 9 "j :y 3 >

IC-524

Abstract: l0246 ua53c PA53C T108 m561 upa53c DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEC Aj ! Ÿ ÎtC 'ê ' b -7 Com pound / \ f 7 T 9 T r a n s is to r /¿PA53C y — ' > Y > ~F U -f h NPN Silicon Epitaxial Darlington Transistor Array High Gain Amplifier /iPA53C!±, r - 'J y b > W ^ tlfz N P N affim i b 5 § è, W-MM Unit : mm) v'J= r>

2SB624

Abstract: 2SD596 F50450
Contextual Info: NEC Aj Silico n T ra n s is to r m+Tixrx 2SD596 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier W-ÏÏÆ/ PACKAGE DIMENSIONS Unit:mm ««/FEA TU RES o m J 'B f t - B T t b ’I , ' ^ 7 " U -y K IC ffl t i r m & T t . 2 .8 ± 0 .2 Oh p £ [ wj ^ H p £ - 200 TYP. (V(;£ —1.0 V, Ic~100 rnA)

2SD1518

Abstract: 5AE0 2SD1581 C3052
Contextual Info: NEC Aj i i T / v 2 S D 1581 S ilicon T ran sis to r f z N P N Silicon Epitaxial Transistor Audio Frequency P o w e r Am plifier 2SD1581 i, x > 9 "iv 9 J T V * — hFE h £1-7(50,/P A C K A G E D IM E N S IO N S (Unit : m m ) 1&=> u 7 7 & ftlW .)± X \ W J j v x f r 'P t f 'y 't z t b , \& W M W ± .X c n ^

Contextual Info: ADVANCE INFORMATION KM658512/L/L-L Pseudo SRAM 5 1 2 K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time: 80,100,120ns Max. — Cycle Time: Random Read/Write Cycle Time 160, 180, 210ns (Max.) • Low Power Dissipation: 200mW typ. (Active)

Gex DIODE

Contextual Info: 6D I50M -050 50 a IW f i T t i i • Outline Drawings POWER TRANSISTOR MODULE ■ t t f t : Features • SfthpE • High DC Current Gain High Speed Switching : Applications • illffl- fV - 'i—^ General Purpose Inverter • mznwM Uninterruptible Power Supply

Contextual Info: ETN36-O3O 300a s < r7 - \ ' 7 > i > X 9 :Z is z L - ) l' : Outline Drawings POWER TRANSISTOR MODULE : Features • High Current • hFE High DC Current Gain •immm Non Insulated Type : Applications High Power Switching • S H ?W iS 3f{K • DC i - • i§ liU !S

027SS

Abstract: 2SK442
Contextual Info: TOSHIBA {DISC RE TE /O PT O} 9097250 T O S H IB A Tí < D IS C R E T E /O P T O 99D DE I ci0cì7aS0 DGlbbaS 16635 D r - 3 ¿ /o ò iìih TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S J 1 2 3 SILICON P CHANNEL MOS TYPE TECHNICAL DATA HIGH SPEED SWITCHING APPLICATION.

R/Detector/"Detector IC"/"CD"/9019 transistor

Contextual Info: MULTI-POWER SUPPLY u n c o R x 5 V E 0 x x x SERIES OUTLINE The RX5VE0 XXX series are multi-power supply ICs with high accuracy output voltage and detector threshold and with ultra low supply current by CMOS process. Each of these ICs consists of four voltage regulators,two volt­

transistor 1Bp

Abstract: 1Bp transistor transistor 337 AJ b338
Contextual Info: 1DI300MN-120I300A '•Outline Drawings POWER TRANSISTOR MODULE ■4#^: : Fea tu res • hFE)b''fit' High DC Current Gain • r * - K rt* • s i s w a f t iiE n r jii : A p p licatio n s • ? General Purpose Inverter • Uninterruptible Power Supply • N C X fN R W Servo & Spindle Drive for NC Machine Tools

TRANSISTOR TCD 100 LS

Abstract: B-205
Contextual Info: 1DI75E-055 75 a W ïfé T b 'È : O utline D ra w in g s /< 7 POWER TRANSISTOR MODULE : Features • S ft fS i H igh V o lta g e • 7 U— Kl *l 3K • A S O A '7 £ tv • fêjSfe In c lu d in g Free W h e e lin g D io d e E xcellent Safe O p e ra tin g Area

Contextual Info: Transistor B minil^eel NPN H atin g s mlnlBefif Bui* 500 pcs T yp e N PN G en eral P urpo se 73-2369 MMBT2369 73-8181 BC818-16 73-8182 BC818 25 73-8183 BC818 40 100 pcs 53-2369 53-8181 53-8182 53-8183 VCEO V Ic mA hFE M in-M ax @ lc VCE 15V 500mA 10mA@1V 25V

tone Dialer

Abstract: ba20 transistor lr48202
Contextual Info: SHARP EL EK / MELEC D IV 1SE o | a ific n n a a c m w P u ls e /T o n e D ia le r LSI LR 48202 LR48202 • / -Dy-Ö-? - Pulse/Tone Dialer LSI D e s crip tio n Pin Connections The LR48202 is a CMOS pulse/tone dialer LSI poviding auto-dialing and redialing. It features a builtin 32-digit X 20 or 16-digit X 40 one-touch or twotouch memory and 32-digit redial memory.

Contextual Info: TT TOSHIBA {DIS CR ETE/ OP TO} 9097250 TOSHIBA DISCRETE/OPTO dF I ^ D T V E S O DDlbbSb 99D 16656 SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2 SK 3 5 8 SILICON N CHANNEL MOS TYPE (7T-MOS) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA {DISCRETE/OPTO} TT 9097250 TOSHIBA <DISCRETE/OPTO> »FI t DTTESO DDlbbBa 99D 16632 SEMICONDUCTOR D T~~ 31-13 TOSHIBA FIELD EFFECT TRANSISTOR 2 S J 1 1 5 SILICON P CHANNEL MOS TYPE TECHNICAL DATA Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION.

induction heater circuit

Abstract: induction heater circuit diagram diagram induction heater induction heater
Contextual Info: : MITSUBISHI TRANSISTOR MODULES ? QM30HC-2H ! 2 1 I INDUCTION HEATER USE TYPE QM30HC-2H Collector current. 30A Collector-emitter voltage.1600V • hFE