TRANSISTOR B 1560 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

transistor d 1557

Abstract: BSS83 BR B6S M74 marking philips bss83 BSS83 M74
Contextual Info: • fc,b53em []D25fel2 bßS H A P X N AUER PHILIPS/DISCRETE BSS83 b?E D _ MOSFET N-CHANNEL ENHANCEMENT SW ITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SO T143 envelope and features a low ON resistance and low capacitances.

KD621K20

Contextual Info: m ß /B S K KD621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 200 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

transistor d 1557

Contextual Info: ^53^31 DDSSblc! bfiS H A P X N AUER PHILIPS/D ISCR ETE BSS83 b?E D J V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.

Contextual Info: KS621220A7 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S Í O Q I b D d r lin Q t O P Transistor Module 200 Amperes/1200 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

Contextual Info: QCA300BA60 TRANSISTOR MODULE Q C A 3 0 0 B A 6 0 is a dual Darlington power transi which has series-connected ULTRA HIGH I if e , high power Darlington transistors. Each transistor has a ri leled fast recovery diode trr. 2 0 0 n s . The mounting module is electrically isolated from Semiconductor

cb pj 47 diode

Contextual Info: N AUER PHILIPS/DISCRETE b^E J> bbS3T31 DD3227fl 070 H A P X Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor _ LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors

TTL integrated circuit Dual J-K Master Slave Flip flop

Abstract: Fairchild 9002 DTL Fairchild 930 JK flipflop 9001 micrologic* master slave ami 9002 ttul Logic 9001 fairchild micrologic dtl rs flip flop ScansUX979
Contextual Info: MARCH 1967 • FAIRCHILD TR A N SIST O R -T R A N SIST O R G E N E R A L D E S C R IP T IO N MICROLOGIC The Fairchild Transistor-Transistor M icrologic* Integrated Circuit fam ily TT/iL com b ines a high fanout, high noise immunity, low power dissipation and good capacitive load driving

KD221203A7

Abstract: KD524575 KD225575 KD524505 KD221K75 KD221205A7 KD221404 KD421415 KD7212A1 kd224575
Contextual Info: D 0 111E R E X I N C t>4E rnmenex J> m 72T4L21 0 0 0 b 5 4 ci D b 4 * P R X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 DARLINGTON TRANSISTOR MODULES (Continued)

ks624550

Abstract: kd221k75hb KD224503HB KD224505HB KS524505HB QM150DY-2H QM150DY-HB KS524505HBA KD224575HB QM150DY-24
Contextual Info: POÜJEREX I NC b 4E J> m 000LSS3 515 BIPRX mn/Btex_ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 HIGH-BETA DARLINGTON TRANSISTOR MODULES

KD224503HB

Abstract: KS624550 powerex kd kd2245 kd2212 kd221K kd62 kd424520hbaa ks52 ksf220
Contextual Info: POÙJEREX I NC b4E D • 000LSS3 S^S « P R X m t/BÍEX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 HIGH-BETA DARLINGTON TRANSISTOR MODULES

KD221203A7

Abstract: KD524505 KD221404 KD225575 KD321408 kd424520 KD721KA1 kd2212 KD7245A1 kd221
Contextual Info: D 0 111E R E X t>4E J> INC rnmenex m 72T4L21 0 0 0 b 5 4 ci D b4 * P R X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 DARLINGTON TRANSISTOR MODULES (Continued)

philips Transistor Equivalent list

Abstract: BDT91 BY239 LFE15600X D0322 374 erie transistor td7
Contextual Info: N AUER PHILIPS/DISCRETE b^E T> • bbSBTBl GG3227Ô Ü70 H A P X Philips Semiconductors Product specification NPN silicon planar epitaxial microwave . . power transistor L rE I FEA TU R E S Q U IC K R E F E R E N C E DATA • Diffused emitter ballasting resistors

200V transistor npn 20a

Abstract: Transistor 200V 20A 2N3846 200V transistor npn 10a
Contextual Info: SOLITRON DEVICES INC flt D E|a3tflb O B ODOESbO t 7" - 3 3 - 0 $ 114 ELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, FAST SWITCHNG NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT M ETALLIZATIO N Base and emitter: > F O R M E R L Y 14 5 0 . 0 0 0 A Aluminum Collector: Gold

BUK795-60A

Contextual Info: PH I L I P S INTERNATIONAL SbE D • 7 1 1 Q S 5 b Ü Ü 4 4 7 S 3 7T2 ■ P H I N Philips Components Data sheet status Prelim inary specification date of issue March 1991 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a 5 pin plastic envelope.

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 sus VOLTS Ic (max) AMPS ^CEO PACKAGE DEVICE TYPE l*FE@ IC/ VCE (min/max @ A/V) VcE(sat) @ Ic^B (V @ A/A) p * WATTS fT (MHz) NPN 2N1487 40 6 15-45@ 1.5/4 3@1.5/.3 75 1.0 TO-3 2N1488 55 6 15-45@ 1.5/4 3@1.5/.3

DTS423

Abstract: DTS-425 DTS410 DTS413 2N6575 DTS-411 DTS425 DTS-413 transistor 2N6274 DTS-430
Contextual Info: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce

Contextual Info: General Transistor Corporation CASE le max ss TO-61 5 to 20A Vceo(sus) = 40-300V NPN Power Transistors VBE(SAT) 0IC/1B (V & A/V) ICEV0VCE (mA V) PO® TC = 25*C (W.M) Wt>®VCE I I I wc (A ®V) Ir (MHz) ton & W B (ju ® A/A) tOFF @IC/1B (p»®AfA) 1 @ 21.2

DTS-425

Abstract: 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 2N5936 2N5937
Contextual Info: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce

transistor s71

Abstract: 2N1489 2N5671 2N1487 2N1488 2N1490 2N3055A 2N3713 2N3714 2N3771
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS 1*FE@ I f / V c E V c E (ja t) (min/max @ A/V) @ Ic^B (V @ A/A) p * r D WATTS fT (MHz) NPN 2N1487 40 6 15-45@1.5/4 3@1.5/.3 75 1.0 TO-3 2N1488 55 6 15-45@ 1.5/4

Westinghouse diode

Abstract: Ks324520 WESTINGHOUSE ELECTRIC motor ac KS621K20 Westinghouse module KS324
Contextual Info: 7294621 POWEREX INC T É? DE | 72T4L.21 0DQEHG7 5 | f Q A T-33-35 Single Darlington _ AmDeres TRANSISTOR í c n /i nnn 51i+o M odules Dim A B C D E F G H J K L N P Inches 3.740 Max 3.150 + .010 .90 M 5xM et 2.44 Max .59 .925 1.181 Max .83 .28 .236 .216 Dia 4

2N1479

Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863

F18N10CS

Abstract: n713 18N10CS f18n10 RFB18N10CSVM Harris top marking
Contextual Info: HARRIS SbE D 43GE271 □ 0 4 2 2 1 b August 1991 Features TDM « H A S RFB18N10CS/ CSVM/CSHM Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor S E M C O N D SECTOR • p s s - q o Package • 18 A, 100V T S -0 0 1 5 LEAD TOP VIEW • rD S (O N ). ° - 1 fl

transistor 2N 3792

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE PN P TO-3 VcEO sus VOLTS Ic (m ax) A M PS 2N 3789 60 10 2 5 -9 0 @ l/2 2N 3790 80 10 2N 3791 60 2N 3792 hFE@ V CE VcE(sat) @ I cA b (V @ A /A ) Pr D * W ATTS fj (M H z) l@ 4/.4 150 4 2 5 -9 0 @ l/2