TRANSISTOR B 458 Search Results

BUK545

Abstract: BUK545-60A BUK545-60B
Contextual Info: PHILIPS INTERNATIONAL bSE D B 7110flSb O O b m ^ b Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

rank 502 fp

Abstract: 2SC4863
Contextual Info: Ordering n u m b e r:E N 4 5 8 2 _ 2SC4863 N o.4582 N PN Epitaxial Planar Silicon Transistor I VHF to UHF Wide-Band Low-Noise Amp Applications F e a tu r e s •Low noise : N F = l.ld B typ f= 1GHz • H igh ga in : I S21e I 2= lld B typ (f= 1GHz)

2N4115

Abstract: 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 2N5346
Contextual Info: llP NPMTO-111 ^ 84aa_^ 2 D I Q D E ISOlaledcnllBntn.-ltenn.-rt' l a f l H B 3 S E TRANSISTOR GO I N C . Ö4D 0G0Q13S □ I 00128 ^— — — t D1DDE TRANSISTOR CQ.J(\IC. FAX ^201^6755883 139-385 * 0u,8lde NV 4 NJ area ca|l T O LL FR EE 800-526-4581 PNP

AE8 diode

Abstract: 4a8 diode diode marking A43 DIODE S6 4aa BV99 aA88 IPB120N06N G
Contextual Info: IPB120N06N G IPP120N06N G "%&$!"# Power-Transistor Product Summary Features . V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R  + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4; I &/  D4@A8 >= X" /- I9 6 O   R >? 4@0B 8=6 B

IPP050N06NG

Abstract: diode a43 IPB050N06NG
Contextual Info: IPP050N06N G IPB050N06N G "%&$!"# Power-Transistor Product Summary Features V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R  + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4;  D4@A8 >= I9 . I ,&/ X" ( 6 O   R >? 4@0B 8=6 B

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK545-60A/B Logic level GENERAL DESCRIPTION PINNING-SOT186 PIN SYMBOL 0 O > N-channel enhancement mode logic level fieid-effect power

Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO

FMMT458

Abstract: FMMT558
Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO

FMMT458

Abstract: FMMT558 ic tba 500 DSA003671
Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO

bf199

Abstract: transistor NPN BF199
Contextual Info: BF199 J V_ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 package. The B F 199 has a very low feedback capacitance and is intended fo r use in the ou tp u t stage o f a vision i.f. amplifier. QUICK REFERENCE D ATA Collector-base voltage open emitter

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

PA47D

Abstract: PA48D UPA47D transistor 16345 TT 6053
Contextual Info: B & D Enterprises nPA47D, 48D Main & Liberty St. Russell PA 16345 /¿PA47D,48D 1- 800 - 458 - 6053 fax 814 -757 5400 *> IJ 3 NPN Silicon Epitaxial Quad Transistor High Current High Speed Switching Industrial Use h ^PA 47D,48D (i, fl-JliEI/PACKAGE DIMENSIONS

UPA46D

Contextual Info: B&DEnterprises Main&LibertySt. Russell PA16545 1-800 458-6053 fax 814}-757-5400 u PA46D NPN Silicon Epitaxial Quad Transistor High Current High Speed Switching Industrial Use ¿iPA46D(i, -i i f Jfc E l/ Package Dimensions (Unit: mm y f->?m t y - ^ l z 4flii0 tK 7 ^ 7 ,

2N5084

Abstract: 2N5284 FL-35A 2N4115 2N5085 2N4116 2N5002 2N5004 2N5083 2N5285
Contextual Info: llP NPMTO-111 I s o la t e d c n llB n t n . - lt e n n . - r t ' ^ 84aa_^ 2 DIQDE TRANSISTOR CO IN C . l a f l H B 3 S E 0G0Q13S □ I Ö4D 0 0 1 2 8 ^ ——— t D1DDE TRANSISTOR CQ.J(\IC. FA X ^ 201 ^ 6 75 58 83 139-385 * 0u,8lde N V 4 N J area ca|l T O LL F R EE 800-526-4581

Type A USB

Abstract: transistor 2515
Contextual Info: 458-2012:QuarkCatalogTempNew 9/1/12 12:57 PM Page 458 ENCLOSURES A/V, TEST CONNECTORS & IC SOCKETS TEST & MEASUREMENT 2 USB, Strip, DIP, Grid, Transistor Sockets and Headers Standard Solder Tail DIP Sockets Open Frame A B .015-.025 .010*.018 Most popular line of standard low profile IC-Sockets. Open frame design leaves

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

by 458 ph diode

Contextual Info: SIEMENS BUZ 72 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 72 Vbs 100 V h> 10 A RoSion Package Ordering Code 0.2 ß TO-220 AB C67078-S1313-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b

lm 458 ic

Abstract: tip624
Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP624,-2,-4 T L P 6 2 4 P R O G R A M M A B L E CONTROLLERS AC/DC-INPUT M O D U LE TELEC O M M U N IC A TIO N Th e T O S H IB A T L P6 2 4 , -2 and -4 consist of a g alliu m arsenide infrared em ittin g diode op tically coupled to a photo-transistor.

smd transistor marking code XC

Abstract: XC SMD MARKING
Contextual Info: B S S 169 I nf ine on technologies Preliminary Data SIPMOS Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Type ^DS BSS 169 100 V 0.12 A ñDS on Package Marking Ordering Code 12Q SOT-23 SFs Q67000-S322 Maximum Ratings

Contextual Info: 1 ^ 3 3 -1 3 ' Philips Components RZ3135B28W Data sheet status Product specification date of Issue June 1992 NPN Silicon planar epitaxial microwave power transistor • 7110ûBt> ODMbSTG bôE « P H I N SbE D PHILIPS INTERNATIONAL _ D E S C R IP T IO N

2N1479

Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863

ALY TRANSISTOR

Abstract: 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY 2N1479
Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863