TRANSISTOR B42 Search Results

Contextual Info: . N E C ELECTRONICS INC 3QE D • b427525 G 0 2 ci50,:i 7 ■ T ^ " 4 i *“ W PHOTO TRANSISTOR _ P H 1 0 6 PHOTO TRANSISTOR The PH 106 is a photo transistor in a plastic molded package, and PACKAG E DIMENSIONS very suitable for a detector of a photo interrupter.

transistor t07

Abstract: NEX2303 NE 2301 02cj NEX2300 NEX2301 NEX230187 NEX2302 NEX230265 NEX230365
Contextual Info: NEC/ CALIFORNIA NEC b42?m4 0001202 S 1SE D .7 -3 3 r < 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H PO W ER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad­ vanced Stepped Electrode Transistor SET structure with

NEX2301

Abstract: NEX2303 NEX2300 NEX230187 NEX2302 NEX230265 NEX230365
Contextual Info: N E C / CALIFORNIA NEC 1SE b42?m4 D 0001202 S .7 -3 3 r< 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIG H POWER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad­ vanced Stepped Electrode Transistor SET structure with

2SK797

Contextual Info: Ôi|b427S2S 6427525 N E C 0Dlflci4S û ELECTRONICS 98D INC 18942 ~ C ~ J3 ~ r N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK797 D ESC R IPTIO N The 2SK797 is N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver. FEATU RES

PS2031

Abstract: NEC ps2031
Contextual Info: N E C ELECTRONICS INC b427525 0 0 2 ^ 5 2 T • 30E D o £3 PHOTO COUPLER PS2031 PHOTO COUPLER High Collector to Emitter Voltage Single Transistor DESCRIPTION The PS2031 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon photo transistor.

transistor D 4515

Abstract: 100-P BUK556-60A A1730
Contextual Info: PHILIPS INTERNATIONAL bSE J> B 7110fl2b □□b42Sb Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

transistor B42

Abstract: AX400 b42 transistor
Contextual Info: N E C ELECTRONICS INC 30E D • b457S25 OGSTSTl S ■ .r-W-b3 PHOTO TRANSISTOR PH I 07 DARLINGTON PHOTO TRANSISTOR The PH 107 is a darlington photo transistor in a plastic molded package, P A C K A G E D IM EN SIO N S and very suitable for a detector of a photo interrupter.

NE243187

Abstract: NE243188
Contextual Info: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The

2N2369A

Abstract: 2n2369a philips TU-T2
Contextual Info: N AMER PHILIPS/DISCRETE bTE bbSBTBl DDEÔDT? ?Db WM APX 11 2N2369A | i SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-18 metal envelope primarily intended for high-speed saturated switching and high frequency amplifier applications. QUICK REFERENCE DATA

Contextual Info: A/jÙi Avionics Pulsed Power Transistor PH 1090-75S Preliminary 75 Watts, 1030-1090 MHz, 10 is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

2sc2952

Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE24600 NE24615 FEATURES DESCRIPTION • LOW IM DISTORTION CHARACTERISTICS AT HIGH OUTPUT LEVELS: NE24615 IM2 = -56 dBc, IM3 = -64 dBc NE24620 IM2= -63 dBc, IM3 = -72 dBc @ V o = 120 dB|iV/75 i l The NE246 is an NPN transistor designed for broadband

2SK774

Contextual Info: 6427525 N E C ELECTRONICS as SaSyir.";- FEATU RES 98D 18925 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ~Tfi D ESCRIPTIO N INC D E | b457S2S OQlfl^BS fl 2SK774 The 2SK774 is N-channel MOS Field Effect Power Transistor designed for switching power supplies OC-OC converter.

my 50

Abstract: PS2031 KY transistor NEC ps2031 12010C LC-1175 LC117
Contextual Info: NEC ELECTRONICS INC 30E D • T ~ Ì 83 i^STSSS QOETbSS T ■ PHOTO COUPLER O / _ P S 2031 PHOTO CO U PLER High Collector to Emitter Voltage Single Transistor DESCRIPTIO N The PS2031 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon photo transistor.

Contextual Info: 64 27 5 25 N E C .NEC EL EC T R O N I C S ELECTRONICS 98D INC 16890 ,f D INC -CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK705 DESCRIPTION FE A T U R E S The 2SK705 is N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver.

NEC uPA101G

Abstract: UPA101B UPA101G
Contextual Info: NEC/ CALIFORNIA 5bE D NEC b4274m 00GSS7S ÖS3 * N E C C UPA101B UPA101G TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: 9 GHz Single Transistors (Units in mm) OUTLINE BS14 T0PVIEW <^° 8 • OUTSTANDING hFE LINEARITY

NEL130681-12

Abstract: NEL1306 2SC3542 NEL1300 NEL13208I-12 2SC3541 J425 75E5 NEL132081-12 NEL1320
Contextual Info: CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR FEATURES NEL130681-12 NEL13208I-12 DESCRIPTION • HIGH LINEAR POWER AND GAIN: N E L 1306: P idB = 3 8 dBm , G id B = 7.5 dB T Y P N EC 's N E L 1 3 0 0 series of N P N epitaxial microwave power transistor is designed specifically for large volum e mobile and

2SC2150

Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
Contextual Info: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use

NE02136

Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
Contextual Info: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­

Contextual Info: N E C ELECTRONICS INC 30E D o • b427525 00aih3h 1 ■ T-HI-fS PHOTO COUPLER P S 1 1 PHOTO COUPLER INDUSTRIAL USE DESCRIPTION The PS1001 is an optically coupled isolator containing a GaAs light em itting diode and an NPN sillicon photo transistor.

FOR1A

Abstract: 2SK720A
Contextual Info: 6427525 N E C ELECTRONICS 98D INC DE|b4275aS 'N E C W MOS GGlflTDl FIELD 18901 D 5 EFFECT TRANSISTOR EfCTBONDEVlCS ß ' W FAST SWITCHING N-CHANNEL SILICON POWER F 1 2 UJ FET Features •Suitable for switching power supplies, DC-DC converters and pulse circuits

nec ps2021

Abstract: T-AV83 PS2021 1581m
Contextual Info: N E C ELECTRONICS INC 3QE D • T - W* f 3 b4E7S2S 002=1^40 fl ■ PHOTO COUPLER P S 2021 PHO TO COUPLER High Isolation Voltage Single Transistor — n e p o c s e r ie s — D E S C R IP T IO N The PS2021 is an optically coupled isolator containing a GaAs light em itting diode and an NPN silicon photo transistor.

PS2607

Abstract: PS2607L PS2608 PS2608L
Contextual Info: N E C ELECTRONICS INC 3QE D • b427525 0Ü217DS 5 ■ f _ O PHOTO COUPLER / PS2607 ,PS2608 J_ PS2607L, PS2608L HIGH ISOLATION VOLTAGE AC INPUT,DARLINGTON TRANSISTOR TYPE 6 PIN PHOTO COUPLER DESCRIPTION PIN CONNECTION Top View PS2607, PS2608 and PS2607L, PS2608L are o ptically coupled isolators

2SC3584

Abstract: ne3813 SC358 NE68133 10r 236 NE68100 NE AND "micro-X" el3025 2SC3582 2SC3583
Contextual Info: N E C / CALIFORNIA 1SE NEC J> b427414 OOG144S 7 NPN SILICON HIGH FREQUENCY TRANSISTOR T-3I-& T -3 I-I7 NE68100 NE68132 NE68133 NE68135 NE68137 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz The NE681 series of NPN silicon transistors are designed for

2SA1424

Abstract: 2SA1228 NE88935 G503 NE327 NE88900 NE AND micro-X NE88933 2SA1223 NE88912
Contextual Info: f NEC/ CALIFORNIA NEC b427414 D0DES05 4DT SbE D INECC NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • PNP COMPLEMENT TO NE327 The NE889 series o f PNP silico n transistors is designed for ultra high speed current mode sw itching applications and