TRANSISTOR B72 Search Results

TRANSISTOR B72 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR B72 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
b72L Abstract: IC regulator B72 sot-23 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES	Original	B772SS B772SS D882SS B772SSL-x-AE3-R B772SSG-x-AE3-R OT-23 2012isonic QW-R206-089 b72L IC regulator B72 sot-23	PDF
TRANSISTOR b72 Abstract: B772 D882 datasheet d882 B772SS D882SS b72 voltage regulator B772SSG B772SSG-x-AE3-R b772ssl Contextual Info: UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES	Original	B772SS B772SS D882SS B772SSL B772SSG B772SS-x-AE3-R B772SSL-x-AE3-R B772SSG-x-AE3-R OT-23 QW-R206-089 TRANSISTOR b72 B772 D882 datasheet d882 D882SS b72 voltage regulator B772SSG B772SSG-x-AE3-R b772ssl	PDF
2SB772SS Abstract: B72 sot-23 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION 3 The UTC 2SB772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 2 FEATURES	Original	2SB772SS 2SB772SS 2SD882SS OT-23 2SB772SSL 2SB772SS-x-AE3-R 2SB772SSL-x-AE3-R OT-23 2SB772SSL-x-AE3-R B72 sot-23	PDF
B72 sot-23 Abstract: TRANSISTOR b72 B772SS D882SS D882* transistor Contextual Info: UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION 3 The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 2 FEATURES	Original	B772SS B772SS OT-23 D882SS B772SSL B772SS-x-AE3-R B772SSL-x-AE3-R B72 sot-23 TRANSISTOR b72 D882SS D882* transistor	PDF
B72 sot-23 Abstract: 2SB772SS QW-R206-089 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION 3 The UTC 2SB772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 2 FEATURES	Original	2SB772SS 2SB772SS 2SD882SS OT-23 2SB772SSL 2SB772SS-x-AE3-R 2SB772SSL-x-AE3-R OT-23 2SB772SSL-x-AE3-R B72 sot-23 QW-R206-089	PDF
B72 sot-23 Abstract: TRANSISTOR b72 D882 datasheet d882 b72L b72 voltage regulator B772 b772s marking b72 B772SS Contextual Info: UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 3 DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 2 FEATURES	Original	B772SS B772SS D882SS OT-23 B772SSL B772SSG B772SS-x-AE3-R B772SSL-x-AE3-R B772SSG-x-AE3-R B72 sot-23 TRANSISTOR b72 D882 datasheet d882 b72L b72 voltage regulator B772 b772s marking b72	PDF
datasheet d882 Abstract: b72 voltage regulator B772 TRANSISTOR b72 B772SS D882SS transistor marking 2A H B721 Contextual Info: UTC B772SS PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 2 1 FEATURES 3 *High current output up to 3A	Original	B772SS B772SS D882SS OT-23 QW-R206-017 datasheet d882 b72 voltage regulator B772 TRANSISTOR b72 D882SS transistor marking 2A H B721	PDF
TRANSISTOR b72 Abstract: B721 Contextual Info: UTC B772SS PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 2 1 FEATURES *High current output up to 3A	Original	B772SS B772SS D882SS OT-23 QW-R206-017 TRANSISTOR b72 B721	PDF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device	OCR Scan	MUN5211T1 SC-70/SOT-323 0Cn354L\| MUN5211T1	PDF
BUK457-600B Abstract: T0220AB Contextual Info: PHILIPS INTERNATIONAL L.5E D fll 7110fl2b CJObmMb ^ 3 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	711002b 0b414b BUK457-600B T0220AB 711002b BUK457-600B T0220AB	PDF
BU1708AX Abstract: 7DFL Contextual Info: Product specification Philips Semiconductors Silicon diffused power transistor BU1708AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope specially designed for 277 V high frequency electronic lighting ballast applications.	OCR Scan	BU1708AX QD77S3S f-rs54] OT186A; OT186 007753b BU1708AX 7DFL	PDF
lem HA Abstract: BU1708AX Contextual Info: Product specification Philips Semiconductors Silicon diffused power transistor BU1708AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope specially designed for 277 V high frequency electronic lighting ballast applications.	OCR Scan	BU1708AX OT186A; OT186 007753b lem HA BU1708AX	PDF
D1571 Abstract: AA0463 st cpcap zy 406 D157 DSP56300 DSP56301 G30-88 G38-87 series T212 data Contextual Info: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56301 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56301 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this	OCR Scan	DSP56301 AA0500 b3b72MA D1571 AA0463 st cpcap zy 406 D157 DSP56300 G30-88 G38-87 series T212 data	PDF
BUK457-600B Contextual Info: PHILIPS INTERNATIONAL fc,5E D m 7110fl2fe. O O b m M b IbB • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	7110fl2fe. BUK457-600B -T0220AB VDS/V-12jy	PDF

equivalent transistor TT 3034 Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718 Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages	OCR Scan	-335/H-135/D-40 -334/H-280/D-41 -334/H-280/D-41 -334/H-28Q/D-41 L-56SW-42/H-115 L-565/W-42/H-12 OT-23, SC-59 equivalent transistor TT 3034 transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718	PDF
transistor b722 Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034 Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded	OCR Scan		PDF
equivalent transistor TT 3034 Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded	OCR Scan		PDF
Contextual Info: N AMER PHILIPS/DISCRETE b^E T> b b S a ' m 0027752 T27 APX BFX34 J V SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-39 metal envelope primarily intended for use as high-current switching device, e.g. inverters and switching regulators. QUICK REFERENCE DATA	OCR Scan	BFX34 bbS3131 0Q577SS bb53T31 002775b bbS3T31	PDF
B861 transistor Abstract: equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR Contextual Info: R OJ N m DTA/DTB/DTC/DTD I DIGITAL TRANSISTOR APPLICATION: • j EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEA T U R ES; • R ep laces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded	OCR Scan	J/U13 B861 transistor equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR	PDF
Contextual Info: September 1996 National Semiconductor NDT453N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	NDT453N OT-223 34bTb74	PDF
Contextual Info: September 1996 National Semiconductor NDT451N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	NDT451N NDT451N OT-223 34bTb74	PDF
T2D 24 DIODE Abstract: T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D Contextual Info: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is	OCR Scan	NDT455N OT-223 NDT455N OT-223 T2D 24 DIODE T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D	PDF
Contextual Info: NDT452AP P-Channel Enhancement Mode Field Effect Transistor G eneral Description Features These P-Channel enhancem ent mode pow er field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored	OCR Scan	NDT452AP NDT452AP OT-223 34bTb74	PDF
NDT453N Contextual Info: September 1996 National Semiconductor" N D T453N N-Channel Enhancement M ode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	NDT453N NDT453N OT-223	PDF

TRANSISTOR B72 Search Results

TRANSISTOR B72 Result Highlights (5)

TRANSISTOR B72 Datasheets Context Search

b72L

TRANSISTOR b72

2SB772SS

B72 sot-23

B72 sot-23

B72 sot-23

datasheet d882

TRANSISTOR b72

BUK457-600B

BU1708AX

lem HA

D1571

BUK457-600B

equivalent transistor TT 3034

transistor b722

equivalent transistor TT 3034

B861 transistor

T2D 24 DIODE

NDT453N