TRANSISTOR BD 108 Search Results

TRANSISTOR BD 108 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR BD 108 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
pin configuration transistor bd140 Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139	Original	BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136	PDF
microwave oscillator Abstract: transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE568 NE56854 Contextual Info: NEC/ BD CALIFOR NIA OODOlET 3 \| 6427414 N E C/ CALIFORNIA ' 30C 00129 D 7 C 3 / — 23 MICROWAVE TRANSISTOR SERIES NE568 PRELIMINARY DATA SHEET FEATURES DESCRIPTIONAND APPLICATIONS • T h e N E568 S e r i e s o f NPN silic o n medium pow e r t r a n HIGH fS	OCR Scan	3/w23 NE568 200mW NE568 NE56855 NES6851 microwave oscillator transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE56854	PDF
MM1027N Abstract: ccont mitsumi variable capacitor MM1027NF MM1027NV MM1027XD MM1027XF MM1027XV MM1081XV Contextual Info: System Reset with battery back-up MM1027, 1081 MITSUMI System Reset (with battery back-up) Monolithic IC MM1027, 1081 Outline These ICs were developed for STATIC-RAM (S-RAM) battery back-up, and have built-in switching circuit for main power supply and battery, back-up timing circuit and battery checker.	Original	MM1027, 00/div 5000/div MM1027N ccont mitsumi variable capacitor MM1027NF MM1027NV MM1027XD MM1027XF MM1027XV MM1081XV	PDF
MM1081XV Contextual Info: System Reset with battery back-up MM1027, 1081 MITSUMI System Reset (with battery back-up) Monolithic IC MM1027, 1081 Outline These ICs were developed for STATIC-RAM (S-RAM) battery back-up, and have built-in switching circuit for main power supply and battery, back-up timing circuit and battery checker.	Original	MM1027, 00/div 5000/div MM1081XV	PDF
BD 130 Y transistor Contextual Info: M 8Ï5U M 8 System Reset with battery back-up MM 1027, 1081 : Monolithic IC MM 1027, 1081 These ICs were developed for STATIC-RAM (S-RAM) battery back-up, and have built-in switching circuit for main power supply and battery, back-up timing circuit and battery checker.	OCR Scan	1000pF MM1027, MM1081 5000/div BD 130 Y transistor	PDF
BD 266 S Abstract: BD140 pnp transistor BD 136 to225a transistor bd 140 -16 BD136 transistor 136 138 140 BD136.6 Contextual Info: M OT O R C L A SC XSTRS/R 15E 0 § F b3b725M G0ÖM70S 3 \| BD136,-6,-10,-16 BD138,-6,-10,~16 BD140,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 1.S AMPERE POWER TRANSISTOR • . . designed for use as audio amplifiers and drivers utilizing	OCR Scan	b3b725M BD136 BD138 BD140 O-225AA 0GflM70t BD 266 S BD140 pnp transistor BD 136 to225a transistor bd 140 -16 transistor 136 138 140 BD136.6	PDF
bc 540 Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N Contextual Info: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0	OCR Scan	BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N	PDF
Contextual Info: Part Number: Integra IB0810M100 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M100 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C mode at Vcc=36V,	Original	IB0810M100 IB0810M100 IB0810M100-REV-NC-DS-REV-A	PDF
IB0810M100 Abstract: l-band 60 watt transistor x band radar U 855 D nc50 Contextual Info: Part Number: Integra IB0810M100 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M100 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C mode at Vcc=36V,	Original	IB0810M100 IB0810M100 IB0810M100-REV-NC-DS-REV-NC l-band 60 watt transistor x band radar U 855 D nc50	PDF
IL311ANM Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D Contextual Info: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.	Original		PDF
8d136 Abstract: transistor BD 141 transistor BD 110 BD140 BD13S transistor bd 138 transistor 136 138 140 transistor BD 140 BD 140 transistor Transistors bd 133 Contextual Info: 2sc D • aaasb o s 0004337 3 PIMP Silicon Transistors IS IE ß r ÖA337 /7 D* SIEMENS AKTIEN6ESELLSCHAF — BD 136 BD 138 BD 140 For A F d riv e r and o u tp u t stag es o f m e d iu m p erfo rm a n c e BD 1 3 6 , BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 1 2 6	OCR Scan	8D136, BD138, BD140 BD136. 023SbQS Q0QH341 BD13S. B0138, 8d136 transistor BD 141 transistor BD 110 BD140 BD13S transistor bd 138 transistor 136 138 140 transistor BD 140 BD 140 transistor Transistors bd 133	PDF
transistor BD 141 Contextual Info: 25C D • aaasbos 0 0 0 4 3 3 7 3 ISIEG r TW 3-/7 ÖA337 PIMP Silicon Transistors D SIEMENS AKTIENGESELLSCHAF — BD 136 BD 138 BD 140 For AF d river and o u tp u t stages of m e d iu m p erform ance BD 136, BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 126	OCR Scan	BD136. BD138, BD140 6235bQS BD138. transistor BD 141	PDF
bo 139 Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140 Contextual Info: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T \| XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing	OCR Scan	L3b72S4 0GflM703 BD135 BD137 BD139 225AA bo 139 bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140	PDF
Lautsprecher LP Abstract: transistor gt 322 service-mitteilungen AC188K ac187k schiebe funkschau STRALSUND MP20A SF225 Contextual Info: SERVICE-MITTEILUNGEN VEB IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N lE fe r a d io -television \ AUSGABE: Seite April 1-6 Aus der Sowjet-Union wird noch in diesem Jahr der TTEmpfänger " SIGNAL 601 " importiert. Es handelt sich um ein Gerät für den Empfang der Berei	OCR Scan		PDF

TRANSISTOR BC 137 Abstract: TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 PXTA14 JC546 transistor BC 56 2PA1015 JC sc70 2PC1815 Contextual Info: P h ilip s Sem iconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors G ENER AL-PU R PO SE LO W -FREQ UENCY TRANSISTO RS OVERVIEW PRO DUCT DATA: PAG ES 7-16 LOW -POW ER NPN surface-m ount leaded	OCR Scan	BC107/108 BCY58/59 2N2483/2484 BC546/547 BCX58 JC500/501 JC546-48 PS3704-3706 MPS3904 PS6513-6515 TRANSISTOR BC 137 TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 PXTA14 JC546 transistor BC 56 2PA1015 JC sc70 2PC1815	PDF
transistor BD 325 Abstract: tip 410 transistor transistor bu 126 BU126 TIP 122 transistor TIP 212 BU105 TIP high power transistor for inverter 500V15 transistor TIP 662 Contextual Info: BU126 NPN SILICON POWER TRANSISTOR B U 126 IS A H IG H V O L T A G E NPN S IL IC O N POWER T R A N S IS TO R • Designed for General Industrial and Consumer Applications • Primarily Intended for Use in Switching Mode Power Supplies mechanical specification	OCR Scan		PDF
XOA transistor Contextual Info: PRELIMINARY TECHNICAL DATA = Dual PCI Hot-PlugTM Controller Preliminary Technical Data PAUXONA ADM1014 3.3V Cmos Input 30 7 +3.3VAux AUXGA 31 AUXINA S Q FAULT LATCH 3.3V Cmos Output FAUXA G RESET 5 D OVERCURRENT AND UNDERVOLTAGE COMPARATORS FOR +3.3VAUX SET	Original	ADM1014 XOA transistor	PDF
D 5038 Transistor Horizontal Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58 Contextual Info: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching	OCR Scan	CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
ph 4148 zener diode Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148 Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS	Original	DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148	PDF
transistor TIP 350 Abstract: BD253 tip 410 transistor b0253 BD253B BD253A BD253C junction to case thermal resistance of to-3 package transistor BD 800 2N5683 Contextual Info: BD253, BD253A, BD253B, BD253C NPN SILICON POWER TRANSISTORS Formerly XB33 Series High Voltage Rating — V c e x uP t0 900 Volts High Current Rating — 6 Amps Peak Low Saturation Voltage at 3 Amps — 0.6 Volts typ. Fast Switching tf at 3 Amps — 300 nano Secs typ.	OCR Scan	BD253, BD253A, BD253B, BD253C BD253 0253A BD253B 700vers transistor TIP 350 tip 410 transistor b0253 BD253A BD253C junction to case thermal resistance of to-3 package transistor BD 800 2N5683	PDF
Keithley s900 Abstract: n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285 Contextual Info: DATE D’ORIGINE DATE ORIGINATED AUTEUR/ORIGINATOR: RT96-024 MARCH 22 1996 SEMICONDUCTOR OBJECT/SUBJECT: NUMÉRO DE RAPPORT REPORT NUMBER PAGE / SHEET 1 de/ of 80 Final Electrical Parameter Capability and Design Rule Evaluation of the 1.2 µm N-Well Single Poly Double Metal Process.	Original	RT96-024 enviro1995, Keithley s900 n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285	PDF
AM503B Abstract: TRANSISTOR bd 108 PAK35-10A AN-4109 A503 HDD Actuator driver 4194a loop gain Contextual Info: www.fairchildsemi.com Application Note 4109 A guide to the design of current feedback control Introduction At first, we will explain the designing method of current feedback control of actuator in CD-media system with FAN8024D/BD, 4CH motor drive IC, which has two current feedback control channel. And then, we describe	Original	FAN8024D/BD, AM503B TRANSISTOR bd 108 PAK35-10A AN-4109 A503 HDD Actuator driver 4194a loop gain	PDF
Bode diagram Abstract: A503 AM503B pi equation for dc motor control kpc motor Contextual Info: www.fairchildsemi.com Application Note 4109 A guide to the design of current feedback control FAN8024BDIntroduction At first, we will explain the designing method of current feedback control of actuator in CD-media system with FAN8024D/BD, 4CH motor drive IC, which has two current feedback control channel. And then, we describe	Original	FAN8024BDIntroduction FAN8024D/BD, Bode diagram A503 AM503B pi equation for dc motor control kpc motor	PDF

TRANSISTOR BD 108 Search Results

TRANSISTOR BD 108 Result Highlights (5)

TRANSISTOR BD 108 Datasheets Context Search

pin configuration transistor bd140

microwave oscillator

MM1027N

MM1081XV

BD 130 Y transistor

BD 266 S

bc 540

IB0810M100

IL311ANM

8d136

transistor BD 141

bo 139

Lautsprecher LP

TRANSISTOR BC 137

transistor BD 325

XOA transistor

D 5038 Transistor Horizontal

2sb504

ph 4148 zener diode

transistor TIP 350

Keithley s900

AM503B

Bode diagram