TRANSISTOR BD 370 B Search Results

bo434

Abstract: b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202
Contextual Info: - ESC D • ÖS35L.05 000M3bfl 3 M S I E â 8236320 SIEMENS/ SPCL. SEMICONDS • r- j w ? BD 434 PNP Silicon Epibase Transistors BD 436 J6 8 D _ SIEMENS AKTIEN6ESELLSCHAF - BD 438 BD 440 BD 442 Pow er transistors for com plem entary A F stages

power transistor mrc 438

Abstract: mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439
Contextual Info: - ESC D • ñ23SbQS 0Q043bfl 3 « S I E G 8236320 SIEMENS/ SPCL. SEMICONDS PNP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF J68 BD434 BD 436 D _ - BD 438 BD440 BD442 Power transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase

PTH60G30BD150N

Abstract: PTH62H02AR180M265 PTH59F PTH61
Contextual Info: POSISTORS FO R C IR C U IT PRO TECTIO N PTH9M/59F SERIES FOR POWER TRANSISTOR OVERHEAT PROTECTION PTH9M Part Number * PTH9M04D471TS2F333 PTH59F04D471TS PTH9M04D222TS2F333 ♦PTH59F04D222TS □ BH BG TS 70 25 °C Resistance TS-10 (°C) TS (°C) Max. Voltage

1S84

Abstract: CA 4016 PIN DIAGRAM KCF4016 diagram LG TV circuits cmos 4016 CI 4016 MOS 4016 1S82 40168 4016
Contextual Info: G/ S - O n S ° N D7C J> I 7^2^237 D O m tS O u u o /iflO S •' IN T E G R A T ED CIRCUIT |Ì ^ ^ 7929225 b I T g tlL Hgò/hcf 40tiBtf S G S SEMICONDUCTOR CORP Q U A D B IL A T E R A L SW ITCH • • • • • • • • • • • • • • •

TRANSISTOR BFW 11

Abstract: BFW10 pins pin configuration of BFW10 BFW10 BF 494 C bf 494 transistor BF494 CIL 108 transistor bf 194b BF200 transistor
Contextual Info: METAL-CAN & EPOXY TRANSISTORS CONTINENTAL DEVICE INDIA 3EE D • S3fl33T4 ODOQOlb T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec

8 pin ic 3773

Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 3055 2N 3232 2N 3442

transistor Amp 3055

Abstract: transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Device 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N Ic VCE0 SUS Amp Volts hFE@

bfw10 transistor

Abstract: pin configuration of BFW10 BFW10 pins bf 194 pin configuration CIL 108 transistor bf 194b transistor bf 179 transistor BF 245 PIN CONFIGURATION BF 494 BF 194 transistor
Contextual Info: METAL-CAN & EPOXY TRANSISTORS CON TINENTAL DEVICE INDIA 3EE D • S3fl33T4 DDOOOlt T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec

Contextual Info: r= 7 SGS-THOMSON ^ 7 TSD2902 [j}fflO Mi[LI gTrœROD©i RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

LI 20 AB

Abstract: TSD2904 SGS 7301 M113
Contextual Info: r=7 SGS-THOMSON TSD2904 RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

Contextual Info: CALOGIC CORP MAE J> 1Ö4M322 00003SM 3 • C G C vJ 3N188-3N181 'T Z FEATURES • • • • l- 'Z I ABSOLUTE MAXIMUM RATINGS Ta - 25°C unless otherwise specified Very High Input Impedance High Gate Breakdown 3N190-3N191 Zener Protected Gate 3N188-3N189

KVL01

Contextual Info: MC100LVEL01 3.3V ECL 4−Input OR/NOR The MC100LVEL01 is a 4−input OR/NOR gate. The device is functionally equivalent to the EL01 device and works from a 3.3 V supply. With AC performance similar to the EL01 device, the LVEL01 is ideal for low voltage applications which require the ultimate in

4016 ic

Contextual Info: COS/MOS INTEGRATED CIRCUIT QUAD • • • • • • • • • • • • • • • A o \ t , * > h c c îh c f « m b B IL A T E R A L S W IT C H 20V D IG IT A L OR ± 10V P E A K -T O -P E A K SW ITCHING 2 8 0 « T Y P IC A L ON RESISTANCE FOR 15V O PE R ATIO N

KVL51

Contextual Info: MC100LVEL51 3.3V ECL Differential Clock D Flip-Flop The MC100LVEL51 is a differential clock D flip-flop with reset. The device is functionally equivalent to the EL51 device, but operates from a 3.3 V supply. With propagation delays and output transition times

BDX33C darlington pair

Abstract: 40349 transistor BDY29 2N3773 transistor 2N3055 RCA 528 2n3771 2N3772 RCA RCA transistor 2n3055 RCA 40250
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V c E to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* le a 1 .S A max. PT - 8.7S W m u . TO-391* A i t . AAi 9U X 9U lc » 3.S A max. P y « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max.

Contextual Info: COS/MOS INTEGRATED CIRCUITS _ n 4 ^ /+ » ‘¡ ¡ S Ä 4-BIT LATCH/4-TO-16 LINE DECODER: HCC/HCF 4514B OUTPUT "H IG H" ON SELECT HCC/HCF 4515B OUTPUT "LOW" ON SELECT • • • • • • Q UIESCENT C U R R E N T SPECIFIED TO 2 0 V FOR HCC D EVICE STRO BED INPUT LATC H

KEP65

Abstract: KP65
Contextual Info: MC100EP16VB 3.3V / 5V ECL Differential Receiver/Driver with High and Low Gain The EP16VB is a world−class differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices but with both high and low gain outputs. QHG and QHG outputs have a DC

Temperature FUSE

Abstract: transistor w08 PTGL07AR8R2M3P51B0 PTGL07AR4R6H2B51B0 PTGL12AR270M9C01B0 PTGL13AR3R7H4B71B0 PTGLS4AR1R0M1B53B0 PTGLS5AR0R8M1B53B0 PTGLS6ARR47M1B51B0 PTGL07AR330M6A51B0
Contextual Info: R90E6.pdf 04.3.1 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF catalog

100EL90

Abstract: Application Note AND8002/D
Contextual Info: MC100EL90 −3.3V / −5V Triple ECL Input to PECL Output Translator The MC100EL90 is a triple ECL to PECL translator. The device receives either −3.3 V or −5 V differential ECL signals, determined by the VEE supply level, and translates them to standard +5 V differential PECL

TBB204G

Abstract: TBB 204 TBB204 colpitts oscillator 400 MHz NEOSID 220 TBB 200 G 3VF8 SMD KRP 8 PIN SMD IC L02
Contextual Info: S IEM EN S Mixer / Oscillator TBB 204 G Bipolar 1C Features • Low noise • Low spurious signal content good suppression of input signal/output signal • High conversion gain • High isolated RF, IF, LO-parts • W ide range of supply voltage (down to 3 V)

TSZ 3.64 mhz

Contextual Info: C O S/M O S , , B 4 - o ^ ft INTEGRATED CIRCUITS jjjjg jg « g GATED J-K M ASTER-SLAVE FLIP-FLOPS • 16 M H z T O G G L E R A T E T Y P . A T V D D - V SS= 10V • GATED • Q U IE S C E N T C U R R E N T S P E C IF IE D T O 2 0 V FO R H C C D E V IC E

CW 7805

Abstract: PTFA092213EL H-34288-6 PTFA092213EL ESD BCP56 LM7805 R250 RO4350 H-33288-6 240-2520-2-ND
Contextual Info: PTFA092213EL PTFA092213FL Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier applications in the 920 to 960 MHz band. These devices feature

KV58

Contextual Info: MC100LVEL58 3.3V ECL 2:1 Multiplexer The MC100LVEL58 is a 2:1 multiplexer. The device is pin and functionally equivalent to the EL58 and works from a 3.3 V supply. With AC performance similar to the EL58 device, the LVEL58 is ideal for low voltage applications which require the ultimate in AC

RCA 40313

Abstract: RCA 528 2n3773 rca 40349 RCA 40349 2N3441 RCA 2N3442 40328 BUX 115 RCA 40250
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. lc • 8 0 A m a x . P t - 3 0 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax.