TRANSISTOR BFP420 Search Results

Contextual Info: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

bfp640f

Abstract: BFP420F
Contextual Info: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

bfp640f

Abstract: bfp640 R4S BFP640F BFP420F Infineon Technologies transistor 4 ghz
Contextual Info: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

transistor BC 245

Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136
Contextual Info: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the

Contextual Info: BFP640F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

Infineon Technologies transistor 4 ghz

Abstract: BFP720F BFP420F BFP720
Contextual Info: BFP720F NPN Silicon Germanium RF Transistor Target data sheet • High gain ultra low noise RF transistor 3 for low current operation 2 4 1 • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Optimum gain and noise figure

Contextual Info: BFP740F XYs NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor 3 • Provides outstanding performance for a wide range 2 4 of wireless applications up to 10 GHz 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

Contextual Info: BFP740F XYs NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for a wide range 2 4 of wireless applications up to 10 GHz 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

Contextual Info: BFP620F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 • Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain TSFP-4

Contextual Info: BFP740F NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for 2 4 1 a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

germanium transistor ac 128

Abstract: BFP420F BFP740F
Contextual Info: BFP740F NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for 2 4 1 a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

RF NPN POWER TRANSISTOR C 10-12 GHZ

Abstract: BFP740 BFP420F BFP740F LBC* MARKING 160 germanium transistor
Contextual Info: BFP740F NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for 2 4 1 a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

BFP620F

Abstract: BFP420F
Contextual Info: BFP620F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 1 • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz

Contextual Info: BFP620F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 1 • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz

Contextual Info: BFP740F XYs NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for 2 4 a wide range of wireless applications 1 up to 10 GHz and more TSFP-4 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

Contextual Info: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.1, 2012-11-07 RF & Protection Devices Edition 2012-11-07 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.0, 2012-01-30 RF & Protection Devices Edition 2012-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.0, 2012-01-30 RF & Protection Devices Edition 2012-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

diode t25 4 G9

Abstract: diode t25 4 g8 diode t25 4 c5 diode t25 4 g0 TRANSISTOR G13 diode t25 4 c4 BFP420 diode t25 4 c6 filter saw Siemens matsua siemens matsushita saw 45
Contextual Info: Siemens Matsushita Components Application Note Using the B4204 PCN 2in1 Filter with a LNA based on the BFP420 RF Transistor Horst Germann S+M OFW E MF October 30, 1998 Munich, Germany Reg.-No.: MFAPP03A Siemens Matsushita Components SAW Components Application: Using B4204 with a LNA based on BFP420

AMS 3630

Abstract: a06 transistor Q62702-F1591 ff 0401 transistor A06 marking A06 BFP420 A06 Code "A06" RF Semiconductor BFP420 application notes BFP420
Contextual Info: SIEGET 25 BFP420 NPN Silicon RF Transistor l For High Gain Low Noise Amplifiers l For Oscillators up to 10 GHz l Noise Figure F = 1.05 dB at 1.8 GHz Outstanding G = 20 dB at 1.8 GHz l Transition Frequency f = 25 GHz l Gold metalization for high reliability

BFP420 application notes

Abstract: INFINEON BFP420 (Ams) INFINEON BFP420 Ams BFP420 BGA420
Contextual Info: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

INFINEON BFP420 Ams

Abstract: BFP420 BGA420
Contextual Info: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

INFINEON BFP420 Ams

Abstract: BFP420
Contextual Info: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

Contextual Info: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability