TRANSISTOR D 304 Search Results

ultra low noise NPN transistor

Abstract: Transistor Arrays "Transistor Arrays" PNP monolithic Transistor Arrays RF TRANSISTOR 10GHZ low noise UHF pnp transistor HFA3046 ultra low noise transistor harris 3046 HFA3128
Contextual Info: so Hm 3046, HFA3096, HFA3127, HFA3128 HARRIS S E M I C O N D U C TJM K Ultra High Frequency Transistor Arrays August 1996 Description • NPN Transistor fT . 8GHz • NPN Current Gain (hFe).

BF495

Abstract: BF495 transistor
Contextual Info: _ BF495 N AMER PHILIPS/DISCRETE . DbE D ^ =53=131 001H3QS D ' r-2/-/7 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant intended for h.f. applications in radio and television receivers; it is especially recommended for f.m. tuners, i.f. amplifiers in a.m./f.m. receivers where a low transistor

Contextual Info: bbS3^31 0024535 304 « A P X N ANER PHILIPS/DISCRETE BCV26 BCV46 b?E D SILICON PLANAR DARLINGTON TRANSISTOR P-N-P silicon planar darlington transistor in a plastic S O T 2 3 envelope. N-P-N complement is BCV27/47. Q U IC K R E F E R E N C E D A T A BCV26 BCV46

CA3046 RCA

Abstract: ICAN-5296 CA304B CA3046 CA3045 RCA-CA3018 rca CA3046 LLAM CA3045F 92CS-I52I6
Contextual Info: D E | 3fl7SDÛl 0014b0G 5 G E SOLID STATE 01 3875081 G Arrays _ SOLID S T AT E 0 1E 1 4 600 D CA3045, CA3046 General-Purpose N-P-N Transistor Arrays Three Isolated Transistors and One DifferentiallyConnected Transistor Pair For Low-Power Applications at Frequencies

CA3046E

Abstract: si3206 et 3045
Contextual Info: d e | 3fl?50fli o a m t o o 2 01E 14600 D G E SOLID STATE 01 3875081 G E SOLID STATE Arrays _ CA3045, CA3046 General-Purpose N-P-N Transistor Arrays T h re e Isolated Transistors and O ne D ifferen tiallyC o n nected Transistor Pair For L ow -P o w er A pplications at Frequencies

MRF342

Abstract: transistor D 2581 RF340
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF342 The RF Line 24 W 1 0 0 -1 5 0 MHz R F POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . d e s ig n e d p rim a rily fo r use in V H F a m p lifie rs w ith a m p litu d e m o d u la tio n and

MP4304

Contextual Info: TOSHIBA MP4304 TO SH IBA PO W E R TRANSISTOR M O D ULE SILICON NPN EPITA XIAL TYPE HIGH GAIN PO W E R TRANSISTOR 4 IN 1 M P 4 304 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

TT 2222

Contextual Info: N AMER PHIL IPS/D ISCR ETE btiS3T31 DDSTOMS STb I IAPX B LV 45/12 b'lE D V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optimum temperature profile

BUK453-100A

Abstract: T0220AB
Contextual Info: PHILIPS INTERNATIONAL L.5E D • 711Dfl2t QDb4041 MTO * P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUZ34

Abstract: 6j11 V103
Contextual Info: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ34_ ObE D • bb53T31 ODlMblS E ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

Contextual Info: N AMER PHILIPS/DISCRETE b 'lE ]> bb53^31 □ D 2 f i ci m IAPX TTD BLV21 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

TRANSISTOR BF495

Abstract: BF495 transistor BF495 BF495C N10Y BF495D transistor TI 310
Contextual Info: _ N AMER PHILIPS/DISCRETE " ~ . DbE D • BF495 htSBTBl 001H30Û G ■ T - 2 1 - I* ? ' SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant intended for h.f. applications in radio and television r a n r a n ; it is especially recommended for f.m . tuners, i.f. amplifiers in a.m./f.m. receivers where a low transistor

Contextual Info: P h ilip ^ e m ic o n d u c to i^ ^ • tatiS3 T 31 DDBltaflfi 75b M APX Pro d u c^p e cifica tio n NPN 1 GHz video transistor ^ BFQ162 N AUER PHILIPS/DISCRETE b'lE » PINNING DESCRIPTION NPN silicon epitaxial transistor in a SOT32 TO-126 package, with emitter-ballasting resistors and a

phonograph preamplifiers

Abstract: differential pair cascode darlington fua 3046 dc uA3045 MA3026 MONOLITHIC DIODE ARRAYS fairchild uA3046 darlington pair transistor cd 3054 LA3026
Contextual Info: |jA3018 •MA3018A. [i A3019 •mA3026 •mA3036 MA3039 • JA3045 •mA3046 •mA3054 •mA3086 TRANSISTOR AND DIODE ARRAYS F A IR C H IL D L IN E A R IN T E G R A T E D C IR C U IT S G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode A rrays consist o f general purpose integrated circuit devices constructed

2N599 JAN

Abstract: 2N599 N468 MIL-S-19491 Y2 TRANSISTOR CONFORMANCE pnp germanium transistor
Contextual Info: M IL-S-19500/186C NAVY 22 June 1964 SUPERSEDING MIL-S-l9500/166B(NAvy) 20 September 1962 (See 6.2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, TYPE 2N599 1. SCOPE 1.1 D escription.- This Specification covers the detailed requirem ents for a PNP germanium transistor

transistor vergleichsliste

Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N

bfr95 philips

Abstract: bfr95
Contextual Info: Product specification Philips Sem iconductors 7- 3 3 ' O S NPN 3.5 GHz wideband transistor DESCRIPTION 711002b D0M5773 H76 M P H I N SbE D PHILIPS INTERNATIONAL BFR95 PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.

Contextual Info: PowerMOS transistor N AMER PHILIPS/DISCRETE _ BUZ34_ ObE D • ^ 5 3 ^ 3 1 QOlHblE 2 ■ r-s^-n July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

MRF517

Abstract: 2761 l transistor 336 motorola OB2200
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF517 The R F Line HIG H FREQUENCY NPN SILICON HIGH FREQ UENCY TRANSISTOR TRANSISTOR NPN SILICON . . . designed s p e c ific a lly fo r b roadb and a p p lic a tio n s re q u irin g lo w d is to r tio n characteristics. S p e cifie d fo r use in C A T V d is tr ib u tio n

BFR95

Abstract: 1 Fp 33 transistor bfr95 philips QDHS773 D2 144 transistor
Contextual Info: Product specification Philips Semiconductors r^ 3 3 -o s NPN 3.5 GHz wideband transistor DESCRIPTION 711062b QDHS773 H76 M P H I N SbE D PHILIPS INTERNATIONAL BFR95 PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.