TRANSISTOR D 570 Search Results

TRANSISTOR D 570 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR D 570 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _ ß PA1710A SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel M O S Field Effect Transistor designed for D C /D C converter and power m anagem ent applications of notebook computers.	OCR Scan	PA1710A PA1710AG	PDF
02p SMD TRANSISTOR Contextual Info: • bbS3131 002315=1 56H « A P X N AUER PHILIPS/DISCRETE BST82 b7E D y v . N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device SMD in thin and thick-film circuits for telephone ringer and for application	OCR Scan	bbS3131 BST82 175DSon 02p SMD TRANSISTOR	PDF
BFR93AW Abstract: B 1359 marking A3 amplifier 449 Contextual Info: BFR93AW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 13 652 2 13 570 3 Marking: WR2	Original	BFR93AW D-74025 07-Nov-97 BFR93AW B 1359 marking A3 amplifier 449	PDF
BFR92AW Contextual Info: BFR92AW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 1 13 652 2 13 570 3 Marking: WP2	Original	BFR92AW D-74025 07-Nov-97 BFR92AW	PDF
d 1879 TRANSISTOR Abstract: transistor D 1666 BFQ23C transistor d 1557 BFP91A B 1449 transistor TRANSISTOR D 471 Contextual Info: Philips Sem Product specification “^ 3 / — / f PNP 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE ]> • BFQ23C 711Gfl5b 0 D M S 4 1 0 S41 PINNING PNP transistor in	OCR Scan	BFP91A. BFQ23C 711Gfl5b d 1879 TRANSISTOR transistor D 1666 BFQ23C transistor d 1557 BFP91A B 1449 transistor TRANSISTOR D 471	PDF
Contextual Info: S A M S U N G SE MI C O N D U C T OR INC MMBTA64 D \| 7^4142 0007300 3 \| PNP EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	MMBTA64 T-29-29 OT-23 MMBTA63	PDF
Contextual Info: N AP1ER PHILIPS/PISCRETE b'lE D bb53T31 D03D675 T73 * A P X Product Specification Philips semiconductors PowerMOS transistor BUK638-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	bb53T31 D03D675 BUK638-500B bb53331	PDF
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
2929 transistor Abstract: MMBTA63 MMBTA64 t2929 Contextual Info: SAMSUNG SEMICONDUCTOR D \| 7^4,4142 0007300 3 \| INC MMBTA64 PNP EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current	OCR Scan	MMBTA64 T-29-29 MMBTA63 OT-23 100fjA 100mA 100mA, 2929 transistor t2929	PDF
BUX88 Abstract: IEC134 9a 1b Contextual Info: N AMER PHILIPS/DISCRETE 5SE D • bbS3T31 ’g OIIOSÌ S ■ BUX88 - ,- - - _ A r - 3 3 - \| g SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed, glass-passivated npn switching transistor in a TO-3 envelope intended for	OCR Scan	bbS3T31 BUX88 r-33-Iff T-33-15 7z88899 BUX88 7z8822s IEC134 9a 1b	PDF
TRANSISTOR GB 558 Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •	OCR Scan	2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558	PDF
blw86 Abstract: 43120203664 BY206 431202036640 choke IEC134 pdst47q sot-123-2 ferroxcube wideband hf choke Contextual Info: N AMER PHILIPS/DISCRETE bbSB'îai DDSTHbl 071 • APX BLW86 b'ïE D A H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transm itters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is	OCR Scan	BLW86 7Z77783 blw86 43120203664 BY206 431202036640 choke IEC134 pdst47q sot-123-2 ferroxcube wideband hf choke	PDF
Contextual Info: LFP AK 56 D PHPT610030NPK NPN/PNP high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/PNP high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK.	Original	PHPT610030NPK OT1205 LFPAK56D) PHPT610030NK. PHPT610030PK. AEC-Q101	PDF

A1489 TRANSISTOR Contextual Info: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure	Original	BFR93A/BFR93AR/BFR93AW BFR93A BFR93AR BFR93AW D-74025 20-Jan-99 A1489 TRANSISTOR	PDF
transistor p2a Contextual Info: • Philips Semiconductors bbSB'lBl ODBSTB? 7Tfl « A P X N AUER PHILIPS/DISCRETE Product specification b?E D PNP switching transistor FEATURES PMST3906 PIN CONFIGURATION • S-mini package • Short switching time. H* H* DESCRIPTION PNP transistor in a plastic SOT323	OCR Scan	PMST3906 OT323 MAM096 transistor p2a	PDF
BFR92A P2 Abstract: BFR92A BFR92AR BFR92AW 706 TRANSISTOR sot-23 Contextual Info: BFR92A/BFR92AR/BFR92AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency	Original	BFR92A/BFR92AR/BFR92AW BFR92A BFR92AR BFR92AW 20-Jan-99 BFR92A/BFR9sign D-74025 BFR92A P2 706 TRANSISTOR sot-23	PDF
BFR92A P2 Abstract: BFR92A BFR92AR BFR92AW BFR92a MARKING P2 Contextual Info: BFR92A/BFR92AR/BFR92AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency	Original	BFR92A/BFR92AR/BFR92AW BFR92A BFR92AR BFR92AW D-74025 20-Jan-99 BFR92A P2 BFR92a MARKING P2	PDF
ZS 633 Abstract: BFR93A application board MARKING WR2 SOT-23 B 1359 BFR93A BFR93AR BFR93AW Contextual Info: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure	Original	BFR93A/BFR93AR/BFR93AW BFR93A BFR93AR BFR93AW D-74025 20-Jan-99 ZS 633 BFR93A application board MARKING WR2 SOT-23 B 1359	PDF
TRANSISTOR D 570 Abstract: BF 145 transistor transistor bf Contextual Info: 2SC D • Ö23SLQS 0GQ4S23 Q H S I E G r - 3 t-rs ~ BF 568 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 5 6 8 is a PNP silicon planar transistor with passivated surface in TO 2 3 6 plastic package 2 3 A 3 DIN 4.1869 . The transistor is particularly suitable for use in low-noise gain-controlled	OCR Scan	23SLQS 0GQ4S23 TRANSISTOR D 570 BF 145 transistor transistor bf	PDF
BFR93A Abstract: BFR93A application board ZS 1052 AC BFR93AR BFR93AW transistor BFR93A MARKING WR2 SOT-23 Contextual Info: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure	Original	BFR93A/BFR93AR/BFR93AW BFR93A BFR93AR BFR93AW 20-Jan-99 BFR93A/BFR93design D-74025 BFR93A application board ZS 1052 AC transistor BFR93A MARKING WR2 SOT-23	PDF
BFR92a MARKING P2 Abstract: BFR92A BFR92AR BFR92AW Contextual Info: BFR92A/BFR92AR/BFR92AW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency	Original	BFR92A/BFR92AR/BFR92AW BFR92A BFR92AR BFR92AW D-74025 20-Jan-99 BFR92a MARKING P2	PDF
BFR93AW Abstract: BFR93A application board transistor BFR93A ZS 1052 AC BFR93A BFR93AR BFR93A VISHAY ZS 633 Contextual Info: BFR93A/BFR93AR/BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure	Original	BFR93A/BFR93AR/BFR93AW BFR93A BFR93AR BFR93AW D-74025 20-Jan-99 BFR93A application board transistor BFR93A ZS 1052 AC BFR93A VISHAY ZS 633	PDF
1e47 Abstract: BUK638-500B SI3090 Contextual Info: PHILIPS : Philips Semiconductors Product Specification PowerMOS transistor G E N E R A L DESCRIPTION N-channel enhancement mode fiekJ-effect power transistor In a plastic envelope. F R E D F E T witn fast recovery reverse diode, particularly suitable for motor control applications, eg. in	OCR Scan	BUK638-500B Tt-25 1e47 BUK638-500B SI3090	PDF

TRANSISTOR D 570 Search Results

TRANSISTOR D 570 Result Highlights (5)

TRANSISTOR D 570 Datasheets Context Search

02p SMD TRANSISTOR

BFR93AW

BFR92AW

d 1879 TRANSISTOR

tip122 tip127 audio amp schematic

y51 h 120c

2929 transistor

BUX88

TRANSISTOR GB 558

blw86

A1489 TRANSISTOR

transistor p2a

BFR92A P2

BFR92A P2

ZS 633

TRANSISTOR D 570

BFR93A

BFR92a MARKING P2

BFR93AW

1e47