TRANSISTOR D 822 Search Results

BUX45

Abstract: transistor et 460
Contextual Info: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

telefunken IC 121

Contextual Info: S 822 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low current UHF remote control applications. Features D Low noise figure

log sheet air conditioning

Abstract: ZXT849K ZXT849KTC
Contextual Info: ZXT849K 30V NPN LOW SATURATION TRANSISTOR IN D-PAK SUMMARY BVCEO = 30V : RSAT = 33m typical; IC = 7A DESCRIPTION Packaged in the D-Pak outline this high current high performance 30V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits

ZXT953K

Abstract: ZXT953KTC of ZXT953KTC
Contextual Info: ZXT953K 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = -100V : RSAT = 67m ; IC = -5A DESCRIPTION Packaged in the D-Pak outline this high current high performance 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits

ZXT951K

Abstract: ZXT951KTC ZXT951 Bv 42 transistor
Contextual Info: ZXT951K 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = -60V : RSAT = 53m typical; IC = -6A DESCRIPTION Packaged in the D-PAK outline this high current high performance 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits

Contextual Info: ZXT1053AK 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = 75V : RSAT = 70m typical; IC = 5A DESCRIPTION Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various

Contextual Info: ZXT849K 30V NPN LOW SATURATION TRANSISTOR IN D-PAK SUM M ARY BV CEO = 30V : RSAT = 33m typical; IC = 7A DESCRIPTION Packaged in the D-Pak outline this high current high perform ance 30V NPN transistor offers low on state losses m aking it ideal for use in DC-DC circuits

ZXT790AK

Abstract: ZXT790AKTC ZXT790A
Contextual Info: ZXT790AK 40V PNP MEDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK SUMMARY BVCEO = -40V : RSAT = 83m ; IC = -3A DESCRIPTION Packaged in the D-Pak outline this high gain 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power

A 673 C2 transistor

Abstract: npn 2222 transistor inverter design using plc log sheet air conditioning NY TRANSISTOR MAKING ZXT1053AK ZXT1053AKTC
Contextual Info: ZXT1053AK 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = 75V : RSAT = 70m typical; IC = 5A DESCRIPTION Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various

ZXT690BK

Abstract: ZXT690BKTC
Contextual Info: ZXT690BK 45V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK SUMMARY BVCEO = 45V : RSAT = 77m ; IC = 3A DESCRIPTION Packaged in the D-Pak outline this high gain 45V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power

Contextual Info: ZXT953K 100V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN D-PAK SUM M ARY BV CEO = -100V : RSAT = 67m ; IC = -5A DESCRIPTION Packaged in the D-Pak outline this high current high perform ance 100V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

Contextual Info: ZXT951K 60V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN D-PAK SUM M ARY BV CEO = -60V : RSAT = 53m typical; IC = -6A DESCRIPTION Packaged in the D-PAK outline this high current high perform ance 60V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

Contextual Info: N AMER PHILIPS/DISCRETE ^1=53^31 DD3T433 E7D BLW83 fc.RE D IAPX l H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear

BLX13

Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971
Contextual Info: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested

transistor Siemens 14 S S 92

Abstract: 2sc 3150 transistor BRY 56 C Bry 56 BRY 66 A BRY 56 B
Contextual Info: ESC D • fl23StiQS 0004773 1 MS I E G , Programmable Unijunction Transistor BRY 56 7” ^ o f SIEMENS AKTIENGESELLSCHAF Programmable silicon planar unijunction transistor in TO 92 plastic package 10 A 3 DIN 41868 . K8max Type Ordering code BRY561» BRY 56 A

DTA143XS

Contextual Info: h DTA143XU/DTA143XK/DTA143XS/DTA143XF DTA143XL/DTA143XA/DTA143XV > v ^ £ / T ransistors D TA 143X U /D T A 143XK /D TA 143XS D TA 143XF/D TA 143XL/D TA 143XA DTA143XV h7>y'X^ }£iaF*3loh7>y'X^ h -7 > y 7. £ X -f " j /Transistor Switch Digital Transistors (Includes Resistors)

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

transistor Siemens 14 S S 92

Abstract: CBV2 BRY56 Q68000-A803 Q68000-A803-S1 Q68000-A803-S3 IW transistor BRY 56 A Programmable unijunction D 823 transistor
Contextual Info: ESC D • 023StiOS 0004773 1 M S Ï E G , Programmable Unijunction Transistor BRY 56 T -3 - ^ - o f SIEMENS AKTIEN6ESELLSCHAF Programmable silicon planar unijunction transistor in TO 9 2 plastic package 10 A 3 DIN 4 1 8 6 8 . H8m ax Type O rdering cod e

2SK822

Abstract: TD-4002 TD400
Contextual Info: DATA SHEET Preliminary NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK822 DESCRIPTION The 2SK822 is N-channel MOS Field E ffect Power Transistor designed fo r sw itching power supplies, DC-DC PACKAGE D IM EN SIO N S in m illim e te rs (inches)

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from