TRANSISTOR FT TO NPN 4V 5MA Search Results

2SC3927

Contextual Info: 2SC3927 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 100max µA V IEBO VEB=7V 100max µA V V(BR)CEO IC=10mA 550min V VCE=4V, IC=5A 10 to 28 10(Pulse15) A hFE IB 5 A VCE(sat) PC 120(Tc=25°C) W VBE(sat) Tj 150 °C fT –55 to +150

2SC3851

Abstract: 2SC3851A FM20
Contextual Info: 2SC3851/3851A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1488/A A V(BR)CEO IB 1 A hFE VCE=4V, IC=1A 60min 80min 40 to320 PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB

2SC3851

Abstract: 2SC3851A FM20 DSA0016507
Contextual Info: 2SC3851/3851A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1488/A A V(BR)CEO IB 1 A hFE VCE=4V, IC=1A 60min 80min 40 to320 PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB

2sc4024

Abstract: FM20 DSA0016508
Contextual Info: 2SC4024 High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor IEBO VEB=15V 10max µA V(BR)CEO IC=25mA 50min V VCE=4V, IC=1A 300 to 1600 3 A VCE(sat) IC=5A, IB=0.1A 0.5max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 24typ MHz Tj 150 °C COB VCB=10V, f=1MHz

t6790

Abstract: ZDT6790 zetex t6790 100MA 45 V NPN ic1a FZT690 DSA003726
Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ZDT6790 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6790 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 45 -50

C3679 equivalent

Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
Contextual Info: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.

d2494

Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in

Contextual Info: DCX LO-R1 H COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors Lead-Free Device CXXYM Mechanical Data · · · · · · Case: SOT-563, Molded Plastic

10KW

Abstract: 22KW DCX122LH DCX122TH DCX142JH DCX142TH Transistor FT TO NPN 4V 5mA
Contextual Info: SPICE MODELS: DCX122LH DCX142JH DCX122TH DCX142TH Pb DCX LO-R1 H Lead-free COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction SOT-563 A Built-In Biasing Resistors

10KW

Abstract: 22KW DCX122LH DCX122TH DCX142JH DCX142TH J-STD-020A
Contextual Info: SPICE MODELS: DCX122LH DCX142JH DCX122TH DCX142TH DCX LO-R1 H COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors Lead-Free Device

20M diode zener

Abstract: 102k1k LDTDG12GPT1G SC-89 transistor collector diode protection
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

Contextual Info: DCX LO-R1 H COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR NE W P RO DUC T Features • • • • Epitaxial Planar Die Construction Built-In Biasing Resistors Lead Free By Design/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5)

NPN PNP sot-563

Abstract: Surface mount NPN/PNP complementary transistor DCX122LH DCX122TH DCX142JH DCX142TH DDCX122LH DDCX142JH
Contextual Info: DCX LO-R1 H COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR NE W P RO DUC T Features • • • • Epitaxial Planar Die Construction Built-In Biasing Resistors Lead Free By Design/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5)

2SC6053

Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC6053 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC6053 is a mini package resin sealed silicon NPN epitaxial type transistor designed with high collector current, small VCE sat .

DCX122LU

Abstract: DCX122LU-7-F DCX122TU DCX142JU DCX142TU
Contextual Info: DCX LO-R1 U COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction SOT-363 A Built-In Biasing Resistors Lead Free/RoHS Compliant (Note 3) CXX YM Mechanical Data

Y 363 transistor

Abstract: DCX122LU DCX122LU-7 DCX122TU DCX142JU DCX142TU marking code vl transistor PNP 5 w
Contextual Info: DCX LO-R1 U COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction SOT-363 A Built-In Biasing Resistors Available in Lead Free/RoHS Compliant Version (Note 3) CXX YM

102k1k

Abstract: 20M diode zener LDTDG12GPLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

Contextual Info: DCX LO-R1 H COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NE W P RO DUC T Features • • • • Epitaxial Planar Die Construction Built-In Biasing Resistors Lead Free By Design/RoHS Compliant (Note 3)

2SC3130

Contextual Info: Transistor 2SC3130 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm +0.2 2.8 –0.3 Ta=25˚C Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO

2sc4809

Contextual Info: Transistor 2SC4809 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 1.6±0.15 Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 3 V Collector current

Diode marking CODE 5M

Abstract: transistor collector diode protection RADIO FREQUENCY transistor marking CODE LDTDG12GPWT1G LDTDG12GPWT3G diode 50M marking code
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

Surface mount NPN/PNP complementary transistor

Abstract: transistor built in resistors 47k 22k DCX122LU DCX122LU-7-F DCX122TU DCX142JU DCX142TU
Contextual Info: DCX LO-R1 U COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR NE W P RO DUC T Features • • • • Epitaxial Planar Die Construction Built-In Biasing Resistors Lead Free/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5)

Contextual Info: DCX LO-R1 U COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NE W P RO DUC T Features • • • • Epitaxial Planar Die Construction Built-In Biasing Resistors Lead Free/RoHS Compliant (Note 3)

Contextual Info: DCX LO-R1 U COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR NE W P RO DUC T Features • • • • Epitaxial Planar Die Construction Built-In Biasing Resistors Lead Free/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5)