TRANSISTOR IC 4A NPN Search Results

2N3055 power amplifier circuit

Abstract: 2N3055 isc 2n3055 transistor transistor 2N3055 Power Transistor 2N3055 2N3055 specification 2N3055 transistor equivalent 2N3055 NPN Transistor 2N3055 transistor 2N3055 power circuit
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055 DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955

2N3055A

Abstract: Vce(sat) MJ2955A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055A DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A

darlington power transistor

Abstract: POWER TRANSISTOR TIP131 TIP131 TIP136 80V 1A NPN darlington
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0V(Max)@ IC= 4A

b 0409

Abstract: TS13005CZ ITO-220 TS13005 TS13005CI TS13005CP ic 4440 TS13005C 4 PIN TO 220 IC
Contextual Info: TS13005 High Voltage NPN Transistor ITO-220 BVCEO = 400V BVCBO = 700V Ic = 4A VCE SAT , = 1V @ Ic / Ib = 4A / 1A Pin assignment: 1. Base 2. Collector 3. Emitter Features Ordering Information High voltage. Part No. High speed switching Packing TS13005CZ Structure

TSC5304D

Abstract: power transistor Ic 4A NPN to - 251 TSC5304DCH TSC5304DCP TS530 NPN Transistor 10A 400V TSC5304 ic 565 pin diagram
Contextual Info: Preliminary TSC5304D High Voltage NPN Transistor with Diode Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 750V Ic = 4A VCE SAT , = 1.2V @ Ic / Ib = 4A / 1A Features Ordering Information Built-in free-wheeling diode makes efficient anti

2N3055H

Abstract: Vce(sat) transistor Ic 4A NPN transistor 2N3055H
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055H DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching and amplifier

Contextual Info: TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 4A 1V @ IC / IB = 4A / 1A Block Diagram  High Voltage  High Speed Switching Structure  Silicon Triple Diffused Type

marking c08

Abstract: C08 marking 250V transistor npn 2a BM 0228 marking code C5 power transistor Ic 4A NPN to - 251 1A MARKING CODE C5 MARKING TRANSISTOR marking code B2 NPN Silicon Power Transistor DPAK
Contextual Info: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

NPN Transistor 1A 400V

Abstract: transistor 926 npn transistors 400V 1A transistor j 127 ITO-220 TS13005 TS13005CI TS13005CZ transistor marking 2a transistor ts13005
Contextual Info: TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 4A 1V @ IC / IB = 4A / 1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

TSC5304D

Abstract: TSC5304DCH TSC5304DCP power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

Contextual Info: TS13005 High Voltage NPN Transistor TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE SAT Features 4A 1V @ IC=4A, IB=1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

TP 1078

Abstract: transistor 926
Contextual Info: TSC128D High Voltage NPN Transistor with Diode TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter TO-263 2 D PAK PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

transistor Ic 1A datasheet

Abstract: transistor Ic 1A datasheet NPN 2SB857 2SD1133
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1133 DESCRIPTION •Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE sat = 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB857

2sc2233

Contextual Info: SILICON PLASTIC POWER TRANSISTOR NPN 2SC2233 4A 40W Technical Data …designed for use in B/W TV horizontal deflection output. F Collector-Base Voltage: VCBO=200V F DC Current Gain: 20 @ IC=4A F TO-220 Package MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage

n50d

Abstract: ZXT13N50DE6 ZXT13N50DE6TA ZXT13N50DE6TC DSA0037462
Contextual Info: ZXT13N50DE6 SuperSOT4 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 36m ; IC= 4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

NPN SOT23-6

Abstract: ZXT10N15DE6 ZXT10N15DE6TA ZXT10N15DE6TC DSA0037431 CM13A
Contextual Info: ZXT10N15DE6 SuperSOT 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=15V; RSAT = 50m ; IC= 4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

IC 630

Contextual Info: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A

Contextual Info: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A

mje803

Abstract: MJE703 transistor 2A 3v
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector–Emitter Breakdown Voltage— : V BR CEO = 80 V ·DC Current Gain— : hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A ·Complement to Type MJE703

KTC5001D

Contextual Info: SEMICONDUCTOR KTC5001D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FEATURES Low Collector Saturation Voltage. : VCE sat =0.13V(Typ.) at (IC=4A, IB=0.05A) A I C Large Collector Current J D : IC=10A(dc) IC=15A(10ms, single pulse) K O Low Frequency Power Amplifier.

Contextual Info: SEMICONDUCTOR KTC5001D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FEATURES Low Collector Saturation Voltage. : VCE sat =0.13V(Typ.) at (IC=4A, IB=0.05A) A I C Large Collector Current J D : IC=10A(dc) IC=15A(10ms, single pulse) O E K Q APPLICATION M B

marking 1d4

Abstract: TS16949 ZXTN07045EFF ZXTN07045EFFTA ZXTP07040DFF
Contextual Info: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications

TS16949

Abstract: ZXTN07045EFF ZXTN07045EFFTA ZXTP07040DFF marking 1d4
Contextual Info: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications

ZETEX GATE DRIVER

Abstract: MARKING 1D4
Contextual Info: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications