TRANSISTOR IQR Search Results
TRANSISTOR IQR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| 93L422ADM/B |
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93L422A - 256 x 4 TTL SRAM |
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| 27S185DM/B |
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27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 |
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TRANSISTOR IQR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK565-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channei enhancement mode logic level fleld-effect power transistor in a |
OCR Scan |
BUK565-200A SQT404 | |
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Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK543-60A/B Logic level _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack |
OCR Scan |
BUK543-60A/B BUK543 | |
transistor 746Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A/B Logic level GENERAL DESCRIPTION N-channe! enhancement mode logic level fietd-effect power transistor in a plastic full-pack |
OCR Scan |
BUK545-60A/B BUK545 transistor 746 | |
lg diode 923Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. |
OCR Scan |
BUK582- OT223 BUK582-100A lg diode 923 | |
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Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fleld-effect power transistor in a plastic envelope suitable for surface mount applications. |
OCR Scan |
BUK581-60A OT223 | |
diode T-71
Abstract: BUK657-400B
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OCR Scan |
BUK657-400B T0220AB BUK657-400B diode T-71 | |
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Contextual Info: Philips Semiconductors Objective Specification PowerMOS transistor Isolated version of PHP1N60E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable |
OCR Scan |
PHP1N60E PHX1N60E PINNING-SOT186A | |
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Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP10N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable |
OCR Scan |
PHP10N40E PHX5N40E OT186A | |
2iy transistorContextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology |
OCR Scan |
BUK9628-55 SQT404 2iy transistor | |
BUK416-1OOAE
Abstract: BUK416-100BE BUK416-100AE transistor 136 138 140
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OCR Scan |
BUK416-100AE/BE BUK416 -100AE -100BE OT227B BUK416-1OOAE/BE BUK416-1OOAE BUK416-100BE BUK416-100AE transistor 136 138 140 | |
diode sy 345
Abstract: T0220AB
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OCR Scan |
PHP3055E T0220AB 100A4is; diode sy 345 T0220AB | |
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Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor isolated version of PHP3N50E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable |
OCR Scan |
PHP3N50E PHX2N50E OT186A | |
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Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, |
OCR Scan |
BUK455-200A/B BUK455 -200A -200B T0220AB | |
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Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance |
OCR Scan |
PHP3055E T0220AB | |
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Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, |
OCR Scan |
BUK452-60A/B BUK452 T0220AB | |
BUK426-800AContextual Info: Philips Com ponents Data sheet status Product specification BUK426-800A/B PowerMOS transistor date of issue March 1991 PHILIPS INTERNATIONAL SbE D 1_ I GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a |
OCR Scan |
BUK426-800A/B BUK426 -800B T-39-11 7110fl5tj BUK426-800A | |
c 879 transistorContextual Info: Philips Semiconductors Product specification RowerMOS transistor Logic level FET GENERAL DESCRIPTION BUK565-100A QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. |
OCR Scan |
BUK565- BUK565-100A c 879 transistor | |
BUK553-100A
Abstract: BUK553-100B T0220AB L013 fet junction transistor
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OCR Scan |
7110fi2b 00kMS31 BUK553-100A/B T0220AB BUK553 -100A -100B BUK553-100A BUK553-100B L013 fet junction transistor | |
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Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, |
OCR Scan |
BUK457-400B T0220AB | |
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Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode fieid-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance |
OCR Scan |
PHP4N40E T0220AB | |
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Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, |
OCR Scan |
BUK456-200A/B BUK456 -200A -200B T0220AB | |
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Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP4N40E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, last switching and |
OCR Scan |
PHP4N40E T0220AB | |
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Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK482-200A QUICK REFERENCE DATA N-channei enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking |
OCR Scan |
BUK482-200A OT223 | |
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Contextual Info: Preliminary Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device Is intended for use in automotive and general purpose |
OCR Scan |
BUK556-60H T0220AB | |