TRANSISTOR J8 Search Results
TRANSISTOR J8 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TTC022 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini |
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TTC020 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini |
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TRANSISTOR J8 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
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KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j | |
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
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AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 | |
BLW81
Abstract: transistor rf m 1104
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BLW81 BLW81 transistor rf m 1104 | |
c 3421 transistor
Abstract: d 3421 transistor J802
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100-Watts MJ4502 c 3421 transistor d 3421 transistor J802 | |
mj802Contextual Info: MOTOROLA Order this document by MJ802/D SEMICONDUCTOR TECHNICAL DATA M J802 H igh-Pow er NPN Silicon Transistor . . . for use as an output device in complementary audio amplifiers to 100-W atts music power per channel. • • • 30 AMPERE POWER TRANSISTOR |
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MJ802/D MJ4502 O-204AA mj802 | |
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
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Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET_ _ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface |
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BUK565-100A | |
Contextual Info: RN1967CT~RN1969CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967CT,RN1968CT,RN1969CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm |
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RN1967CT RN1969CT RN1968CT RN2967CT RN2969CT RN1968CT RN1967CT | |
Contextual Info: RN1967CT~RN1969CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967CT,RN1968CT,RN1969CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm |
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RN1967CT RN1969CT RN1968CT RN2967CT RN2969CT | |
PVB42004X
Abstract: SC15 sot445
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PVB42004X OT445A SCA53 127147/00/02/pp8 PVB42004X SC15 sot445 | |
diode BY239
Abstract: BD239 BY239 LLE16045X
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LLE16045X SCA53 127147/00/02/pp12 diode BY239 BD239 BY239 LLE16045X | |
Philips 2222-030
Abstract: philips resistor 2322 4312 020 36640 philips catalog potentiometer 100 pf, ATC Chip Capacitor 100A BLF543 enamelled copper wire MDA487 class b power transistors datasheet current gain IEC -320 C14
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BLF543 SC08b MBB072 MBA931 OT171 Philips 2222-030 philips resistor 2322 4312 020 36640 philips catalog potentiometer 100 pf, ATC Chip Capacitor 100A BLF543 enamelled copper wire MDA487 class b power transistors datasheet current gain IEC -320 C14 | |
SOT123 Package
Abstract: enamelled copper wire tables HF SSB APPLICATIONS BLF145 J119 transistor J-146 MGP040 j146 enamelled copper wire mm table
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BLF145 SC08a OT123 SOT123 Package enamelled copper wire tables HF SSB APPLICATIONS BLF145 J119 transistor J-146 MGP040 j146 enamelled copper wire mm table | |
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S9018W
Abstract: s9018 transistor S9018 transistor SOT J8 S9018 transistor
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S9018W 200mW) OT-323 S9018 BL/SSSTF060 S9018W s9018 transistor S9018 transistor SOT J8 S9018 transistor | |
enamelled copper wire tables
Abstract: BLF145 J146 J-146
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BLF145 OT123 MBB072 enamelled copper wire tables BLF145 J146 J-146 | |
RD07MUS2B
Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
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RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773 | |
RD07MUS2B
Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
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RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053 | |
4312 020 36640
Abstract: BLF543 MDA489 MRA991
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BLF543 MBA931 OT171 4312 020 36640 BLF543 MDA489 MRA991 | |
marking 7W 66
Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
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RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) Oct2011 marking 7W 66 AN-UHF-105 transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041 | |
SSB transmitter
Abstract: 7540 Group BLF145
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M3D065 BLF145 OT123A SCA75 613524/03/pp15 SSB transmitter 7540 Group BLF145 | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TV9018NND03 WBFBP-03B TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ) |
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WBFBP-03B TV9018NND03 WBFBP-03B 400MHz | |
2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
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2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 | |
LTE42012RContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LTE42012R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE42012R FEATURES PINNING - SOT440A • Interdigitated structure provides high emitter efficiency |
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LTE42012R OT440A SCA53 127147/00/02/pp12 LTE42012R |