oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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epsilam 10
Abstract: BDT91 BY239 LFE15600X
Text: DISCRETE SEMICONDUCTORS DATA SHEET LFE15600X NPN microwave power transistor Product specification Supersedes data of January 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors
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LFE15600X
SCA53
127147/00/02/pp12
epsilam 10
BDT91
BY239
LFE15600X
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BP317
Abstract: PBSS4140T PBSS5140T
Text: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D088 PBSS4140T NPN BISS transistor Product specification 2001 Mar 23 Philips Semiconductors Product specification NPN BISS transistor PBSS4140T PINNING FEATURES • Low VCEsat PIN • High current capabilities. APPLICATIONS
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M3D088
PBSS4140T
PBSS5140T.
MAM255
613514/01/pp8
BP317
PBSS4140T
PBSS5140T
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,
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BFG135
OT223
MSB002
R77/03/pp16
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RN1110FS
Abstract: RN1111FS RN2110FS RN2111FS
Text: RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.
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RN1110FS
RN1111FS
RN1110FS,
RN2110FS,
RN2111FS
RN1111FS
RN2110FS
RN2111FS
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
OT223
MSB002
OT223.
R77/03/pp14
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bfg135 application note
Abstract: bfg135 bfg135sot223 BFG135 amplifier TRANSISTOR GENERAL DIGITAL L6 BFG135,115
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,
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BFG135
OT223
BFG135
MSB002
OT223.
R77/03/pp16
771-BFG135-T/R
bfg135 application note
bfg135sot223
BFG135 amplifier
TRANSISTOR GENERAL DIGITAL L6
BFG135,115
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BFG135 amplifier
Abstract: SC7313 BFG135 bfg135 application note MBB298
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,
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BFG135
OT223
MSB002
R77/03/pp16
BFG135 amplifier
SC7313
BFG135
bfg135 application note
MBB298
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transistors
Abstract: bc337 TRANSISTOR equivalent BC337 hie hre hfe EQUIVALENT TRANSISTOR bc547 bc547 sot 23 transistor BC547 equivalent bc337 hie bc338 equivalent bc327 equivalent BC547 sot23
Text: Application Applikation Bipolar Transistors Bipolartransistoren Nomenclature: Benennung: B – Silicon Transistor C – LF Low Power Transistor nnn – Serial Number X or -nn – hFE Group B – Siliziumtransistor C – NF Kleinleistungstransistor nnn – Serien-Nummer
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BC807
BC808
BC817
BC818
BC846
BC847
BC848
BC849
BC850
BC856
transistors
bc337 TRANSISTOR equivalent
BC337 hie hre hfe
EQUIVALENT TRANSISTOR bc547
bc547 sot 23 transistor
BC547 equivalent
bc337 hie
bc338 equivalent
bc327 equivalent
BC547 sot23
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TRANSISTOR GENERAL DIGITAL L6
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
OT223
BFG35
MSB002
OT223.
R77/03/pp14
771-BFG35-T/R
TRANSISTOR GENERAL DIGITAL L6
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BFG35
Abstract: TRANSISTOR GENERAL DIGITAL L6 BFG35 amplifier
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
OT223
MSB002
OT223.
R77/03/pp14
BFG35
TRANSISTOR GENERAL DIGITAL L6
BFG35 amplifier
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BFQ34
Abstract: bfq34 application note FP 801
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ34 PINNING NPN transistor encapsulated in a 4
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BFQ34
OT122A
BFQ34
bfq34 application note
FP 801
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is
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BFR106
MSB003
R77/02/pp10
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BFR106
Abstract: MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is
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BFR106
MSB003
R77/02/pp10
BFR106
MSB003
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sot669 footprint
Abstract: No abstract text available
Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY
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PHPT60603NY
OT669
LFPAK56)
PHPT60603PY
AECQ-101
sot669 footprint
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC
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PHPT61002NYC
OT669
LFPAK56)
PHPT61002PYC
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BFQ34
Abstract: transistor marking N1 BFQ34/01,112
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ34 PINNING NPN transistor encapsulated in a 4
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BFQ34
OT122A
BFQ34/01
BFQ34/01
OT122
BFQ34
transistor marking N1
BFQ34/01,112
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LFPAK footprint
Abstract: PH2920 sot669 lfpak
Text: PH2920 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 13 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH2920 in SOT669 (LFPAK).
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PH2920
M3D748
OT669
PH2920
LFPAK footprint
sot669
lfpak
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PH3230
Abstract: No abstract text available
Text: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 02 — 5 September 2002 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK).
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PH3230
M3D748
OT669
PH3230
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MCT8 opto
Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR
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MCT210
MCT26
MCT66
C1255
10TT1.
MCT8 opto
c1252
MCL601
MCT8 opto switch
C1246
4N25
4N26
4N27
4N28
4N35
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97CC
Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18
Text: ESM 18 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE High current fast switching transistor Transistor de commutation rapide fort courant V CEO 100 V Amplification BF ou H F grands signaux •c 25 A Thermal fatigue inspection
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CB-19
97CC
transistor ESM 16
transistor ESM 30
ESM18
transistor ESM 18
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR COUPLER MARKTECH IN TER NATI ON AL lfiE D • 57mS5 0000474 3 M T5800, M T5810 'T - m - s i GaAlAs INFRARED LED+ PHOTO TRANSISTOR The MT5800 and MT5810 consist of a photo transistor optically coupled to an aluminum gallium arsenide infrared emitting diode in a five lead VDE package. MTPC5800 is
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57mS5
T5800,
T5810
MT5800
MT5810
MTPC5800
fj24A
436-S865
OGGG47Ã
MT5810
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: / = 7 SGS-THOM SOil BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATIONS: . MOTOR CONTROL . HIGH FREQUENCY AND EFFICIENCY CONVERTERS DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency
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BUTW92
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