TRANSISTOR MARKING 1Y Search Results

74AUP1G19GM

Abstract: 74AUP1G19GW JESD22-A114E
Contextual Info: 74AUP1G19 Low-power 1-of-2 decoder/demultiplexer Rev. 01 — 13 August 2008 Product data sheet 1. General description The 74AUP1G19 provides a 1-of-2 decoder/demultiplexer with a common output enable. It buffers the data on input pin A and passes it either to output pin 1Y true or 2Y

HVR-1X 7 diode

Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Contextual Info: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

PBSS4480x

Abstract: PBSS5480X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4480X 80 V, 4 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2004 Aug 5 2004 Oct 25 NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X

Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

IS3H4

Abstract: MARKING CODE 6408
Contextual Info: IS3H4 INPUT COMPACT RANGE DESCRIPTION The IS3H4 is an optically coupled isolator consisting of two infrared light emitting diodes in inverse parallel and an NPN silicon photo transistor. It belongs to Isocom’s Compact range of opto-couplers AHP1 FEATURES

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Package Drawings unit: mm DESCRIPTION The 2SJ463A is a sw itching device which can be driven directly by a 2.5 V power source. The 2SJ463A has excellent sw itching characteristics, and is

2SD2457

Contextual Info: Transistor 2SD2457 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● High collector to emitter voltage VCEO. Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment

Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol Collector-Base Voltage Col lector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies

fairchild power bjt

Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor
Contextual Info: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver

Contextual Info: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when used in an ESBCTM configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition

C10535* MANUAL NEC

Abstract: 2SJ461 C10535E MEI-1202
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

314J

Abstract: CS8126 CS8156 LM2926 LM2927 936h
Contextual Info: CS8126 5.0 V, 750 mA Low Dropout Linear Regulator with Delayed RESET The CS8126 is a low dropout, high current 5.0 V linear regulator. It is an improved replacement for the CS8156. Improvements include higher accuracy, tighter saturation control, better supply rejection, and

Contextual Info: Transistors SMD Type Product specification BF821,BF823 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High voltage max. 300 V . 1 0.55 Low current (max. 50 mA) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

Contextual Info: FJPF2145 ESBC Rated NPN Power Transistor ESBC Features FDC655 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON)(1) 0.21 V 2A 0.105 Ω The FJPF2145 is a low-cost, high-performance power switch designed to provide the best performance when

MN638S

Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

Contextual Info: LMP91300 www.ti.com SNOSCS3A – SEPTEMBER 2013 – REVISED OCTOBER 2013 LMP91300 Industrial Inductive Proximity Sensor AFE Check for Samples: LMP91300 FEATURES DESCRIPTION • • • • • • • The LMP91300 is a complete analog front end AFE optimized for use in industrial inductive proximity

Contextual Info: LMP91300 www.ti.com SNOSCS3A – SEPTEMBER 2013 – REVISED OCTOBER 2013 LMP91300 Industrial Inductive Proximity Sensor AFE Check for Samples: LMP91300 FEATURES DESCRIPTION • • • • • • • The LMP91300 is a complete analog front end AFE optimized for use in industrial inductive proximity

lm9130

Contextual Info: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents LMP91300 SNOSCS3B – SEPTEMBER 2013 – REVISED MARCH 2014 LMP91300 Industrial Inductive Proximity Sensor AFE 1 Features 3 Description • • • • • • • The LMP91300 is a complete analog front end AFE

1ff TRANSISTOR SMD MARKING CODE

Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
Contextual Info: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369

chn 924

Abstract: CHN 712 transistor chn 047 transistor chn 746 chn 832 transistor chn 848 CHN 709 chn 723 CHN 927 TL82
Contextual Info: T e m ic S886T/S886TR Semiconductors MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. ^ Applications Low noise gain controlled input stages in UHF- and VHFtuner with 12 V supply voltage.

Contextual Info: TOSHIBA 2SK208 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK208 GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER Unit in mm MICROPHONE APPLICATIONS +0.5 2.5-0.3 + 0.25 1.5-0.15 • High Breakdown Voltage :V j d s = —50V • High Input Impedance

transistor MAR 826

Abstract: SMD TRANSISTOR MARKING 99r MAR 948 transistor transistor MAR 231 MAR 732 marking 949
Contextual Info: Temic S949T/S949TR S e m i c o n d u c t o r s MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. *" Applications Low noise gain controlled input stages in UHF- and VHFtuner with 9 V supply voltage.