2SK208 Search Results

2SK208

Contextual Info: 2SK208 SILICON N CHANNEL JUNCTION TYPE G E N E R A L PURPOSE AND IMPEDANCE CONVERTER Unit in mm AND CONDEN SER MICROPHONE A P P L I C A T I O N S . + 0 .5 2 .5 — 0 .3 FEATURES: + 0 .2 5 1.5 - Q . l 5 . High Breakdown Voltage : V q q s =-50V dc5 +! d • High Input Impedance : Içgg=-1.0nA Max.

2SK208

Contextual Info: T O S H IB A 2SK208 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK208 GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER U nit in mm MICROPHONE APPLICATIONS + 0.5 2.5-0.3 • + 0.25 1.5-0.15 High Breakdown Voltage :V GD g = —50V •

Contextual Info: 2SK2084 L , 2SK2084(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter

2SK2089

Contextual Info: TO SHIBA 2SK2089 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SII.5 2SK2089 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm TO-22QFL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 10.3M AX APPLICATIONS.

2SK245

Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H

2SJ83

Abstract: 2SK238 2SJ82 2SK241 2SK240 2SK203 2SK220 2S119 2SK197 2SK198
Contextual Info: - 38 - * . 1 fr K ft f M € tí: € 2SK197 B ÍL B ÍL 2SK198 tñ“ F 2 SK196 H 2SK199 2SK201 NEC 2SK203 NEC 2SK208 m m m £ 4 -k % Vg s * X V* m (V) * (V) 800m 2m 120 0.2 -2 10 10m G 150m -lOn -0.5 2m 14m 10 -0.3 -4 10 LF A J N D -30 GDO 10m G 150m

2SK2081-01

Contextual Info: 2SK2081-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 0,6Ω 12A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

a2393

Abstract: 2SK2080-01R
Contextual Info: 2SK2080-01R FU JI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-II SERIES • Features Outline Drawings • Hi| h speed switching • Lo n on-resistance • Nc secondary breakdown • Lo w driving power • Hit|h voltage • V G,= ± 30 V Guarantee • Avalanche-proof

Hitachi DSA00279

Contextual Info: 2SK2085 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter

Contextual Info: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

Contextual Info: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

Contextual Info: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

gs 069

Abstract: 2SK2081-01
Contextual Info: 2SK2081-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 0,6Ω 12A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2sk2082

Abstract: 2SK2082-01 equivalent 2SK2082-01 n-channel 900v 9a
Contextual Info: 2SK2082-01 N-channel MOS-FET FAP-IIA Series 900V > Features - 1,4Ω 9A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: TOSHIBA 2SK208 TOSHIBA FIELD EFFECT TRANSISTOR <; i SILICON N CHANNEL JUNCTION TYPE \ c i n ft Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS + 0.5 2 .5 - 0.3 • • • • High Breakdown Voltage :V Gijg = —50V

2SK2082-01 equivalent

Abstract: 2Sk2082 2SK2082-01 SC-65
Contextual Info: 2SK2082-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-3P Applications Switching regulators

2SK2083

Abstract: bx090
Contextual Info: Ordering num ber:EN 4617 _ 2SK2083 No.4617 N-Channel MOS Silicon FET Very High-Speed Switching Applications I Features • Low ON resistance • Very high-speed switching •Micaless package facilitating mounting Absolute Maximum R atings at Ta = 25°C

n-channel 900v 9a

Abstract: 2Sk2082 2SK2082-01 equivalent 2SK2082-01 900v mosfet
Contextual Info: 2SK2082-01 N-channel MOS-FET FAP-IIA Series 900V > Features - 1,4Ω 9A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2085

Abstract: 2SK208
Contextual Info: 2SK2085 Silicon N Channel MOS FET Application TO–92 MOD. High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC

Contextual Info: Transistors IC SMD Type Type SMD Product specification 2SK2084S Features TO-252 Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low drive current 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15

Hitachi DSA001652

Contextual Info: 2SK2084 L , 2SK2084(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter

Contextual Info: 2SK2085 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter

2SK208

Abstract: 2SK2082
Contextual Info: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2sk2082

Abstract: condenser microphone 2SK208
Contextual Info: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)