TRANSISTOR MARKING 391 Search Results
TRANSISTOR MARKING 391 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TTC022 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini |
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TTC020 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini |
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TRANSISTOR MARKING 391 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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marking AE 5pin
Abstract: AE MARKING 5PIN dual transistors UMT5
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OCR Scan |
SC-74A) 2SA1037AK, marking AE 5pin AE MARKING 5PIN dual transistors UMT5 | |
Contextual Info: SIEMENS NPN Silicon RF Transistor BF 763 • For low-noise amplifiers and oscillators up to 1 GHz Type Marking Ordering Code BF 763 - Q62702-F766 Pin Co nfigurai ion 1 2 3 B E Package1 TO-92 C Maximum Ratings Parameter Symbol Collector-emitter voltage Collector-base voltage |
OCR Scan |
Q62702-F766 l235bGS | |
Contextual Info: BSS 100 In fin e o n taehnologifts SIPMOS Small-Slgnal Transistor • N channel • Enhancement mode • Logic Level *V'GS th = 0.8.2.0V Type Vbs fe f l DS(on) Package Marking BSS 100 100 V 0.22 A 6Í2 TO-92 SS 100 Type BSS 100 BSS 100 BSS 100 Ordering Code |
OCR Scan |
Q62702-S499 Q62702-S007 Q62702-S206 E6288 E6296 E6325 S35bQ5 Q133777 SQT-89 B535bQ5 | |
2n3057Contextual Info: 2N3057A Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3057A NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and |
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2N3057A MIL-PRF-19500/391 2N3057A 2N3057 MIL-PRF-19500/391. T4-LDS-0185-1, | |
2n3019 equivalent
Abstract: 2n3019 transistor test 2N3700 "nickel cap"
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2N3019 MIL-PRF-19500/391 2N3019 MIL-PRF-19500/391. T4-LDS-0185, 2n3019 equivalent 2n3019 transistor test 2N3700 "nickel cap" | |
Contextual Info: 2N3019S Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019S NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and |
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2N3019S MIL-PRF-19500/391 2N3019S O-205AD) 2N3019 MIL-PRF-19500/391. T4-LDS-0185-4, | |
6822
Abstract: 2N3019S "nickel cap"
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2N3019S MIL-PRF-19500/391 2N3019S 2N3019 MIL-PRF-19500/391. T4-LDS-0185-4, 6822 "nickel cap" | |
test 2N3700
Abstract: 2n3019 equivalent
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2N3700 MIL-PRF-19500/391 2N3700 MIL-PRF-19500/391. O-206AA) T4-LDS-0185-2, test 2N3700 2n3019 equivalent | |
2N3700 Equivalent transistor
Abstract: 2n3019 transistor 23/1N647-1 JANTXV
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2N3700 MIL-PRF-19500/391 2N3700 MIL-PRF-19500/391. 2N3700. O-206AA) T4-LDS-0185-2, 2N3700 Equivalent transistor 2n3019 transistor 23/1N647-1 JANTXV | |
JANSL 2N3019S
Abstract: JANS2N3700UB 2n3019 equivalent
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2N3019 2N3019S MIL-PRF-19500/391 2N3019S 2N3019. O-205AD) T4-LDS-0098, JANSL 2N3019S JANS2N3700UB 2n3019 equivalent | |
2N3057AContextual Info: JANS_2N3057A RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR DESCRIPTION This RHA level 2N3057A NPN Silicon Transistor device is military qualified up to a JANSR level for high-reliability applications requiring a radiation hardened device. Microsemi also |
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2N3057A MIL-PRF-19500/391 2N3057A 2N3057. O-206AB) T4-LDS-0262, | |
2n3019 equivalent
Abstract: 2N3019
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2N3019 2N3019S MIL-PRF-19500/391 2N3019S 2N3019. O-205AD) T4-LDS-0098, 2n3019 equivalent | |
Contextual Info: JANS_2N3057A RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR DESCRIPTION This RHA level 2N3057A NPN Silicon Transistor device is military qualified up to a JANSR level for high-reliability applications requiring a radiation hardened device. Microsemi also |
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2N3057A MIL-PRF-19500/391 2N3057A 2N3057. O-206AB) T4-LDS-0262, | |
2N3700 DIE
Abstract: JANKC2N3700 JANHCA2N3700 2N3019 DIE 2N3019 2N3019S 2N3057A 2N3700 2N3700UB JANHC2N3700
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MIL-PRF-19500/391G MIL-PRF-19500/391F 2N3019, 2N3019S, 2N3057A, 2N3700, 2N3700UB JANHC2N3700 JANKC2N3700 MIL-PRF-19500. 2N3700 DIE JANKC2N3700 JANHCA2N3700 2N3019 DIE 2N3019 2N3019S 2N3057A 2N3700 2N3700UB | |
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TRANSISTOR SMD MARKING CODE w2
Abstract: 6 pin TRANSISTOR SMD CODE XI smd transistor marking C14 smd transistor marking l6 smd transistor marking code w2 w SMD MARKING CODE C16 smd transistor marking l7 TRANSISTOR SMD MARKING CODE XI smd transistor marking C14 8 MLD940
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M3D750 BLF2022-30 BLF2022-30 OT608A 15-Aug-02) TRANSISTOR SMD MARKING CODE w2 6 pin TRANSISTOR SMD CODE XI smd transistor marking C14 smd transistor marking l6 smd transistor marking code w2 w SMD MARKING CODE C16 smd transistor marking l7 TRANSISTOR SMD MARKING CODE XI smd transistor marking C14 8 MLD940 | |
Contextual Info: Philips Semiconductors Product specification PNP Darlington transistors FEATURES BCV26; BCV46 PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 60 V) 1 base • Very high DC current gain (min. 10000). 2 emitter 3 collector APPLICATIONS |
OCR Scan |
BCV26; BCV46 BCV27 BCV47. BCV26 BCV46 | |
Contextual Info: 2N3700UB Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability |
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2N3700UB MIL-PRF-19500/391 2N3700UB 2N3700 MIL-PRF-19500/391. 2N3700UB. T4-LDS-0185-3, | |
Buffer Amplifier Ghz
Abstract: HMC391LP4 HMC391LP4E
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HMC391LP4 391LP4E HMC391LP4 HMC391LP4E Buffer Amplifier Ghz | |
transistor marking SA p sot-23
Abstract: transistor marking SA sot-23
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OCR Scan |
CMPT2907AE CMPT2907AE CMPT2907A OT-23 150mA, transistor marking SA p sot-23 transistor marking SA sot-23 | |
Contextual Info: HMC391LP4 / 391LP4E v03.0209 MMIC VCO w/ BUFFER AMPLIFIER, 3.9 - 4.45 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Ampliier for: Pout: +5.0 dBm • VSAT & Microwave Radio Phase Noise: -106 dBc/Hz @100 KHz • Radio Altimetry No External Resonator Needed |
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HMC391LP4 391LP4E HMC391LP4 HMC391LP4E | |
BFG55A
Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
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OCR Scan |
LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60 | |
HMC391LP4Contextual Info: HMC391LP4 / 391LP4E v02.0505 Typical Applications Features Low noise MMIC VCO w/Buffer Amplifier for: Pout: +5.0 dBm • VSAT & Microwave Radio Phase Noise: -106 dBc/Hz @100 KHz • Radio Altimetry No External Resonator Needed • Test Equipment & Industrial Controls |
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HMC391LP4 391LP4E HMC391LP4 HMC391LP4E | |
Contextual Info: HMC391LP4 / 391LP4E v02.0505 MMIC VCO w/ BUFFER AMPLIFIER, 3.9 - 4.45 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Amplifier for: Pout: +5.0 dBm • VSAT & Microwave Radio Phase Noise: -106 dBc/Hz @100 KHz • Radio Altimetry No External Resonator Needed |
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HMC391LP4 391LP4E HMC391LP4 HMC391LP4E | |
Contextual Info: HMC391LP4 / 391LP4E v02.0505 MMIC VCO w/ BUFFER AMPLIFIER, 3.9 - 4.45 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Amplifier for: Pout: +5.0 dBm • VSAT & Microwave Radio Phase Noise: -106 dBc/Hz @100 KHz • Radio Altimetry No External Resonator Needed |
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HMC391LP4 391LP4E HMC391LP4 HMC391LP4E |