TRANSISTOR MARKING NA 85 Search Results

BC856

Abstract: sot-23 marking 3g MARKING 3A SOT-23 transistor marking code SOT-23 marking 3F transistor sot-23 3F TRANSISTOR SOT-23 marking 3f npn transistor footprint marking 3F sot-23 transistor SOT-23 transistor code 3B
Contextual Info: BL Galaxy Electrical Production specification NPN general purpose Transistor FEATURES z Low current. max.100mA z Low voltage.(max.65v) BC856/857/858 Pb Lead-free APPLICATIONS z General purpose switching and amplification. SOT-23 ORDERING INFORMATION Type No.

8550SG

Abstract: 8550SL transistor 8550S UTC 8550SL 8050S 8550S UTC8550S PNP transistor 8050S pnp low saturation transistor sot23
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 2 1 SOT-23 „ DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 2 1 SOT-23  DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 2 1 SOT-23  DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier

ZXTP2014Z

Abstract: ZXTP2014ZTA
Contextual Info: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications.  FEATURES * High Power: 850mW * High Current: 1A

Marking 3ds sot

Abstract: Q62702-C2532 VPS05604
Contextual Info: BC 856S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type Marking Ordering Code

he 8050s

Abstract: transistor marking B9 MARKING B9 sot-23 8550SL UTC 8550SL
Contextual Info: UNISONIC TECHNOLOGIES CO., 8550S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR FEATURES 2 1 *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S 3 MARKING SOT-23 B9 *Pb-free plating product number: 8550SL

pnp transistor A1 sot-23

Abstract: FAIRCHILD SOT-23 MARK 30 MARKING 3E SOT23-3 Cross Reference sot23 SOT-23 Product Code Top Mark PC mark code 14 SOT-23 16 TRANSISTOR sot-23 3B SOT23-3 FAIRCHILD SOT-23 MARK PC 9aa marking
Contextual Info: BC856/857/858/859/860 BC856/857/858/859/860 Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 . BC850 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector

C8550S

Abstract: 8550S 8550SL transistor marking B9
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. 8550S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 2 FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S 1 3 SOT-23 MARKING *Pb-free plating product number: 8550SL

Contextual Info: 8550S SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: SOT-23 * Complement to 8050S * Collector Current: Ic=-500mA * Collector D issipation: Pc=225mW Ta=25°C ABSOLUTE M AXIMUM R ATINGS a t Tan*-2$ C

8550SL

Abstract: transistor marking B9 MARKING B9 sot-23 8550S UTC 8550SL
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 1 2 SOT-23 FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complimentary to 8550S 1 TO-92 *Pb-free plating product number: 8550SL

marking Ht SOT-363

Abstract: 3h250 FT12E 3cs transistor
Contextual Info: SIEMENS BC 857S PNP Silicon AF Transistor Array >For AF input stages and driver applications 1High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package ^ F I H "•> <>« i- n - i u Ordering Code

3cs transistor

Abstract: marking 3cs 6c2 transistor PS056
Contextual Info: SIEMENS BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications A • High current gain 5_ O ^ • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package

marking 31A sot-23

Contextual Info: DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 85mΩ @ VGS = 4.5V, ID = 3.6A

DMN3150L

Abstract: DMN3150L-7
Contextual Info: DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 85mΩ @ VGS = 4.5V, ID = 3.6A RDS(ON) < 115mΩ @ VGS = 2.5V, ID = 3.1A Low Gate Threshold Voltage

marking 31A sot-23

Contextual Info: DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 85mΩ @ VGS = 4.5V, ID = 3.1A RDS(ON) < 115mΩ @ VGS = 3.0V, ID = 2.5A

ZXTN25060BFH

Abstract: ZXTP25060BFH ZXTP25060BFHTA
Contextual Info: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to

LBN150B01-7

Abstract: MMST3904 MMST3906 rce marking
Contextual Info: LBN150B01 150 mA LOAD SWITCH FEATURING COMPLEMENTARY BIPOLAR TRANSISTORS NEW PRODUCT General Description • LMN150B01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC846/847/848/849/850 SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • Suitable for automatic insertion in thick and thin-film circuits • LOW NOISE: BC849, BC850 • Complement to BC856 . BC860 ABSOLUTE MAXIMUM RATINGS TA=25°C

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • Suitable for automatic insertion in thick and thin-film circuits • LOW NOISE: BC859, BC860 • Complement to BC846 . BC850 ABSOLUTE MAXIMUM RATINGS TA=25°C

VPS05604

Contextual Info: BC 857S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604

H12E

Contextual Info: BC 856U PNP Silicon AF Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197

Marking 3ds sot

Abstract: VPS05604 TRANSISTOR BC 650 c
Contextual Info: BC 856S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604