TRANSISTOR MPSA77 Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

MPSA27

Abstract: MPSA77 VEB-10V
Contextual Info: SEMICONDUCTOR MPSA27 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A Complementary to MPSA77. N E K G J D MAXIMUM RATINGS Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage

TRANSISTORS BJT bc548

Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Contextual Info: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002

Darlington Transistor

Abstract: MPSA27
Contextual Info: SEMICONDUCTOR MPSA27 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A ・Complementary to MPSA77. N E K G J D MAXIMUM RATINGS Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage

Contextual Info: SEMICONDUCTOR MPSA77 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A ・Complementary to MPSA27. N E K G J D MAXIMUM RATINGS Ta=25℃ RATING UNIT VCBO -60 V Collector-Base Voltage H F Collector-Emitter Voltage VCES -60

MPSA27

Abstract: MPSA77
Contextual Info: SEMICONDUCTOR MPSA27 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A ᴌComplementary to MPSA77. N E K G J D MAXIMUM RATINGS Ta=25ᴱ UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCES 60 V Emitter-Base Voltage

MPSA27

Abstract: MPSA77 MPS-A27
Contextual Info: SEMICONDUCTOR MPSA77 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A ᴌComplementary to MPSA27. N E K G J D MAXIMUM RATINGS Ta=25ᴱ UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCES -60 V Emitter-Base Voltage

MPSA27

Abstract: MPSA77
Contextual Info: SEMICONDUCTOR MPSA77 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A Complementary to MPSA27. N E K G J D RATING UNIT VCBO -60 V Collector-Emitter Voltage VCES -60 V Emitter-Base Voltage VEBO -10 V Collector Current IC -500

Contextual Info: SAMS UNG SEMICONDUCTOR INC 14E D | VILUM ? 000737b 3 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA77 — - T -2 9-2 9 DARLINGTON TRANSISTOR TO-92 • Collector-Em itter Voltage: Vc£s=60V • C ollector D issipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2929 transistor

Abstract: t2929 MPSA62 MPSA75 T-31-21 vbe 10v T-29-29 625MW
Contextual Info: S A MS UN G SEMICONDUCTOR INC 14E D I 7^4142 0007370 2 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA64 T-29-29 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vcta=30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: DATA SHEET MPSA75 MPSA76 MPSA77 PNP DARLINGTON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPSA75 series are silicon PNP Darlington Transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain.

"Darlington Transistor"

Abstract: MPSA77
Contextual Info: MPSA77 PNP Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 800mA. • Sourced from process 61. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted

MPSA77

Contextual Info: MPSA77 MPSA77 PNP Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 800mA. • Sourced from process 61. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted

MPSA77

Abstract: MPS-A77 CTO-92
Contextual Info: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR MPSA77 ISSUE 1 – JUNE 94 FEATURES * 60 Volt VCEO * Gain of 10k at IC=100mA E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO

TRANSISTOR A77

Abstract: A77 marking a77 package marking Marking code mps
Contextual Info: MPSA77 MPSA77 PNP Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 800mA. • Sourced from process 61. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted

MPSA25

Abstract: MPSA75 MPSA76 MPSA77 transistor oc 76
Contextual Info: MPSA75 MPSA76 MPSA77 PHILIPS INTERNATIONAL SbE J> 7 11 □ fl2 b 00142522 472 » P H I N m PNP DARLINGTON TRANSISTOR PNP small-signal Darlington transistors, each in a plastic TO-92 envelope. NPN complementary types are MPSA25, 26, and 27. QUICK REFERENCE DA TA

MPSA26

Contextual Info: bTE T> m MPSA25 MPSA26 MPSA27 bbS3131 0D2B01S b?0 • APX N AUER PHILIPS/DISCRETE A NPN DARLINGTON TRANSISTOR NPN small-signal Darlington transistors, each in a plastic TO-92 envelope. PNP complementary types are MPSA75, MPSA76, and MPSA77. Q UICK REFERENCE D A T A

MPSA25

Abstract: MPSA27 MPS-A25 MPSA26 MPSA75 MPSA76 MPSA77 MPS-A26
Contextual Info: blE ]> • I I M P ^ A P 'S II MPSA27 bb53«i31 DDSÔG1S b70 *A P X N ANER PHILIPS/DISCRETE MPSA26 NPN DARLINGTON TRANSISTOR NPN small-signal Darlington transistors, each in a plastic TO-92 envelope. PNP complementary types are MPSA75, MPSA76, and MPSA77.

DSA003760

Abstract: pnp to92 MPSA77P
Contextual Info: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR MPSA77P ISSUE 1 – JUNE 94 FEATURES * 60 Volt VCEO * Gain of 10k at IC=100mA C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage

MPSA25

Abstract: npn transistor t12 MPSA75 MPSA76 MPSA77
Contextual Info: fe^E ]> • bb53S31 D02ÔD23 747 MPSA75 MPSA76 MPSA77 N AI1ER PHILIPS/DISCRETE PNP DARLINGTON TRANSISTOR PNP small-signal Darlington transistors, each in a plastic TO-92 envelope. NPN complementary types are MPSA25, 26, and 27. Q UICK REFERENCE D A T A Collector-em itter voltage