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    TRANSISTOR RJP Search Results

    TRANSISTOR RJP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR RJP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA2160

    Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
    Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series


    Original     		PDF O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    2SK1198

    Abstract: ss1212 ScansUX881 nec 2501 LD
    Text: NEC IM-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK1198 DESCRIPTION The 2SK1198 Transistor is N-channel designed for MOS switching Field Effect Power power supplies, PACKAGE DIM EN SIO N S AC in millimeters inches Adapters. FEATURES •


    OCR Scan     		PDF 2SK1198 1988M ss1212 ScansUX881 nec 2501 LD

    st2222a

    Abstract: No abstract text available
    Text: Central Semiconductor Corp. CM ST2222A SUPER-MINI NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount package, designed for small signal general


    OCR Scan     		PDF ST2222A CMST2222A

    2SK1198

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 NEC IM-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK1198 DESCRIPTION The 2SK1198 Transistor


    OCR Scan     		PDF 2SK1198 2SK1198 1988M

    p733

    Abstract: No abstract text available
    Text: TOSHIBA TLP731,TLP732 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TI P731 TI P733 m mg m • ■ w ■ « v OFFICE MACHINE U n it in mm HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SVViTCHiNG PO W E R SUPPLY 6 ti 5 i i 4 r? ■ 0.6 The T O S H IB A TLP731 and TLP732 consist of a photo-transistor


    OCR Scan     		PDF TLP731 TLP732 TLP732 UL1577, E67349 TLP731JLP732 p733

    c103 TRANSISTOR equivalent

    Abstract: C102 M transistor Solitron Devices c103 TRANSISTOR c103 npn
    Text: 8368602 SOLITRON DEVICES INC 95D 02 89 3 1 fl3hfibUd OaOEÖTB D 0 I rJpwMËeon • MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP N U M BER Devices. Inc. PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * FORMERLY 69 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum


    OCR Scan     		PDF 203mm) C-102 C-103 c103 TRANSISTOR equivalent C102 M transistor Solitron Devices c103 TRANSISTOR c103 npn

    SOL-18pin

    Abstract: No abstract text available
    Text: TOSHIBA TD62783J84AP/AFW TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62783AP, TD62783AFW, TD62784AP, TD62784AFW 8CH HIGH-VOLTAGE SOURCE DRIVER The TD62783AP/AFW Series are comprised of eight source current Transistor Array. These drivers are specifically designed for fluorescent


    OCR Scan     		PDF TD62783J84AP/AFW TD62783AP, TD62783AFW, TD62784AP, TD62784AFW TD62783AP/AFW SOL-18pin DIP18-P-300-2 SOL18-P-300-1 -500mAMIN.

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TD62318AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62318AP, TD62318AF 4CH LOW INPUT ACTIVE HIGH-CURRENT DARLINGTON SINK DRIVER The TD62318AP, TD62318AF are non-inverting transistor array which are comprised of four NPN darlington output


    OCR Scan     		PDF TD62318AP/AF TD62318AP, TD62318AF TD62318AF 700mA DIP16-P-300-2

    transistor x 13002

    Abstract: No abstract text available
    Text: TO SHIBA TD62318AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62318AP, TD62318AF 4CH LOW INPUT ACTIVE HIGH-CURRENT DARLINGTON SINK DRIVER The TD62318AP, TD62318AF are non-inverting transistor array which are comprised of four NPN darlington output


    OCR Scan     		PDF TD62318AP/AF TD62318AP, TD62318AF TD62318AF 700mA DIP16-P-300-2 transistor x 13002

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    transistor RJp 30

    Abstract: R01J
    Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET BUK110-50DL For maintenance only. Do not use for design-in. DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface


    OCR Scan     		PDF BUK110-50DL transistor RJp 30 R01J

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TD62308BP-1/BF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62308BP-1, TD62308BF 4ch LOW INPUT ACTIVE HIGE-CURRENT DARUNGTON SINK DRIVER The TD62308BP-1 and TD62308BF are non-inverting transistor array which are comprised of four NPN


    OCR Scan     		PDF TD62308BP-1/BF TD62308BP-1, TD62308BF TD62308BP-1 TD62308BF DIP-16pin PFP-16pin

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TD62308BP-1/BF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62308BP-1, TD62308BF 4ch LOW INPUT ACTIVE HIGE-CURRENT DARUNGTON SINK DRIVER The TD62308BP-1 and TD62308BF are non-inverting transistor array which are comprised of four NPN


    OCR Scan     		PDF TD62308BP-1/BF TD62308BP-1, TD62308BF TD62308BP-1 TD62308BF DIP-16pin PFP-16pin

    transistor RJp

    Abstract: No abstract text available
    Text: 2SJ168 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 68 Unit in mm ANALOG SWITCH APPLICATIONS + 0.5 2.5-0.3 INTERFACE APPLICATIONS • • • Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance


    OCR Scan     		PDF 2SJ168 2SK1062 transistor RJp

    BUK455-500B

    Abstract: BJE 80 diode T0220AB
    Text: N AP1ER P H I L I P S / D I S C R E T E bTE D • bbS313 1 DOBDbLiD 76T H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PINNING - T 0220A B SYMBOL PARAMETER Drain-source voltage Drain current DC Total power dissipation


    OCR Scan     		PDF bbS3131 BUK455-500B T0220AB 03Qbfc /V-10 BJE 80 diode

    TLP321

    Abstract: No abstract text available
    Text: TOSHIBA TLP321 ,TLP321-2,TLP321-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR T I P 3mm 3 1m g Tm I P 3 3 1 - 3 g Tm I P 3 3 1 - J • ■ ■ w ■ «r ■ ■ PROGRAMMABLE CONTROLLERS U nit in mm < 3 DC-OUTPUT MODULE TLP321 TELECOMMUNICATION rL I L2k.


    OCR Scan     		PDF TLP321 TLP321-2 TLP321-4 IP331-3 IP331-J TLP321, TLP321-4 TLP321/-2/-4 TLP321

    2SK1060

    Abstract: k1060 2SK1060Z 2SK1060-Z
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS 2 S K 1 0 6 0 ,2S K1060-Z DESCRIPTION The 2SK1060, 2SK1060-Z are N-Channel MOS Field Effect Power Transistor designed for solenoid,


    OCR Scan     		PDF K1060-Z 2SK1060, 2SK1060-Z 1989M 2SK1060 k1060 2SK1060Z

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA CNY17-2,CNY17-3,CNY17-4 TOSHIBA PHOTOCOUPLER r N v Y• 1■ 7« - 3 m g T GaAs IRED & PHOTO-TRANSISTOR N 7 - ^ m 'm Ym 1m m mm g T N m Ym 1m m7 - d m AC LINE/DIGITAL LOGIC ISOLATOR DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR TELEPHONE LINE RECEIVER TWISTED PAIR LINE RECEIVER


    OCR Scan     		PDF CNY17-2 CNY17-3 CNY17-4 CNY17-2 CNY17-3

    2SK1060

    Abstract: 2SK1060-Z K1060 2SK1060Z ScansUX882
    Text: N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS 2 S K 1 0 6 0 ,2S K 1 0 6 0 -Z D E S C R IP T IO N The 2S K 10 60, 2S K 10 60-Z are N-Channel MOS Field E ffect Power Transistor designed for solenoid, m otor and lamp driver. FEATURES • 4 V Gate Drive — Logic level —


    OCR Scan     		PDF 2SK1060, 2SK1060-Z 1989M 2SK1060 2SK1060-Z K1060 2SK1060Z ScansUX882

    TIPL774

    Abstract: P6019 P6020 lZ-300 P6042 TIP41 K041 TIP41 Texas Instruments NPN Transistor 30A 400V
    Text: TEXAS I NS TR -COPTO} 8961726 TEXAS De J IN S T R O P T O 0D37Cm 62 C 3 7 0 9 1 r TIPL774 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTOR O C T O B E R 1 9 8 2 - R E V IS E D O C T O B E R 1 9 8 4 T-3 3 - 2 9 20 A Continuous Collector Current 150 W at 50°C Case Temperature


    OCR Scan     		PDF 0037cm TIPL774 T-33-29 TIPL774 P6019 P6020 lZ-300 P6042 TIP41 K041 TIP41 Texas Instruments NPN Transistor 30A 400V