TRANSISTOR S52 Search Results

TRANSISTOR S52 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8

TRANSISTOR S52 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
KS624530 Contextual Info: KS624530 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SinQlB DdtHflQtOH Transistor Module 300 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in	OCR Scan	KS624530 Amperes/600 KS624530	PDF
RCA H 541 Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483 Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK	OCR Scan		PDF
K638 Abstract: transistor S52 BUK638 DIODE 1000a fet 1000A Contextual Info: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK638-1OOOA/B PowerMOS transistor Fast recovery diode FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N -channel enhancem ent m ode field-effect pow er transistor in a	OCR Scan	BUK638-1000A/B 0G44744 BUK638 -1000A -1000B K638-1OOOA/B 711Gfi5b 04M74L K638 transistor S52 DIODE 1000a fet 1000A	PDF
transistor s49 Abstract: KS624530 powerex ks62 Contextual Info: m H B XX KS624530 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 300 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in	OCR Scan	KS624530 Amperes/600 transistor s49 KS624530 powerex ks62	PDF
TIS25 Abstract: KS52 KS524505 tis25c S-10 S-11 S-12 Contextual Info: KS524505 Powerex, inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S in Q lQ D B iH n C ftO n Transistor Module 50 Amperes/600 Volts O U T L I N E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power	OCR Scan	KS524505 Amperes/600 TIS25 KS52 KS524505 tis25c S-10 S-11 S-12	PDF
transistor T K 2056 Abstract: K 2056 transistor transistor K 2056 Contextual Info: SANYO SEMICONDUCTOR 12E CORP D \| 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage	OCR Scan	SS2SC4271 T0126 300mA, 100mA) SS2SC4272 1S-126A IS-20MA transistor T K 2056 K 2056 transistor transistor K 2056	PDF
BUK543 Abstract: BUK543-100A BUK543-100B Contextual Info: f . - — - - - . — - PHILIPS INTERNATIONAL bSE D B - 711065b D D b 4 m Philips Semiconductors - TD7 • PHIN Product Specification PowerMOS transistor	OCR Scan	711065b BUK543-100A/B -SOT186 BUK543 BUK543-100A BUK543-100B	PDF
Contextual Info: FJY4002R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=10KΩ, R2=10KΩ • Complement to FJY3002R Equivalent Circuit C C S52 E B E B SOT 523F Absolute Maximum Ratings *	Original	FJY4002R FJY3002R	PDF
FJY3002R Abstract: FJY4002R Contextual Info: FJY4002R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=10KΩ, R2=10KΩ • Complement to FJY3002R Eqivalent Circuit C C S52 E B E B SOT - 523F Absolute Maximum Ratings *	Original	FJY4002R FJY3002R FJY3002R FJY4002R	PDF
S53 MARKING Contextual Info: FJY4002R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=10KΩ, R2=10KΩ • Complement to FJY3002R Equivalent Circuit C C S52 E B E B SOT - 523F Absolute Maximum Ratings *	Original	FJY4002R FJY4002R FJY3002R FJY4003R S53 MARKING	PDF
FJY3002R Abstract: FJY4002R Contextual Info: FJY4002R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=10KΩ, R2=10KΩ • Complement to FJY3002R Equivalent Circuit C C S52 E B E B SOT - 523F Absolute Maximum Ratings *	Original	FJY4002R FJY3002R FJY3002R FJY4002R	PDF
Contextual Info: WWEREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KS624530 Single Darlington Transistor Module 300 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol KS624530 Units Ti	OCR Scan	KS624530 Amperes/600	PDF
Contextual Info: FJY4002R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface circuit, Driver Circuit • Built-in Bias Resistor R1 = 10 kΩ, R2 = 10 kΩ • Complement to FJY3002R Application • Switching Application (Integrated Bias Resistor)	Original	FJY4002R FJY3002R OT-523F FJY4002R	PDF
Contextual Info: FJY4002R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface circuit, Driver Circuit • Built-in Bias Resistor R1 = 10 kΩ, R2 = 10 kΩ • Complement to FJY3002R Application • Switching Application (Integrated Bias Resistor)	Original	FJY4002R FJY3002R OT-523F	PDF

S-5251 Contextual Info: 10A LDO 5-Pin Adjustable Linear Regulator Description This new very low dropout regula tor is designed to power the next generation of advanced m icropro cessor. To achieve very low dropout, the internal pass transistor is powered separately from the con	OCR Scan	CS52510-1GT5 S-5251	PDF
LDS274 Abstract: 23 PIN TFT MOBILE DISPLAY 8bit RGB to 18bit parallel LCD RGB 18 bit 760K G240 8080 rgb interfaces transistor 8080 Contextual Info: PRODUCT OVERVIEW LDS274 LDS274 176 RGB x 240 262k Color TFT LCD Driver The LDS274 is a low power single chip 262k Color Thin Film Transistor (TFT) LCD Driver with Integrated Controller for small panel color displays used in next generation wireless handsets and mobile consumer	Original	LDS274 LDS274 760k-bit 23 PIN TFT MOBILE DISPLAY 8bit RGB to 18bit parallel LCD RGB 18 bit 760K G240 8080 rgb interfaces transistor 8080	PDF
Contextual Info: SPICE Device Model SUP/SUB75P03-08 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUP/SUB75P03-08 18-Jul-08	PDF
TP0202T Contextual Info: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D	Original	TP0202T O-23ion S-52426--Rev. 14-Apr-97 TP0202T	PDF
c5088 transistor Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154	Original	1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N	PDF
ic ca 747 Contextual Info: 3A LDO 5-Pin Adjustable Linear Regulator D escrip tio n This new very low dropout regula tor is designed to pow er the next generation of advanced m icropro cessors. To achieve very low dropout, the internal pass transistor is powered separately from the con	OCR Scan	CS5253-1 CS5253-1GDP5 CS5253-1GDPR5 ic ca 747	PDF
VP2410L Contextual Info: VP2410L P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,	Original	VP2410L O-226AA O-226AA) S-52426--Rev. 14-Apr-97 VP2410L	PDF
TP0202T Contextual Info: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D D D	Original	TP0202T O-236 S-52426--Rev. 14-Apr-97 TP0202T	PDF
VP2410L Contextual Info: VP2410L P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,	Original	VP2410L O-226AA O-226AA) S-52426--Rev. 14-Apr-97 VP2410L	PDF
70221 Abstract: mosfet vq3001p VQ3001J VQ3001P Contextual Info: VQ3001J/3001P N-/P-Ch. Enhancement-Mode MOSFET Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 Features Benefits Applications	Original	VQ3001J/3001P S-52426--Rev. 14-Apr-97 70221 mosfet vq3001p VQ3001J VQ3001P	PDF

TRANSISTOR S52 Search Results

TRANSISTOR S52 Result Highlights (5)

TRANSISTOR S52 Datasheets Context Search

KS624530

RCA H 541

K638

transistor s49

TIS25

transistor T K 2056

BUK543

FJY3002R

S53 MARKING

FJY3002R

S-5251

LDS274

TP0202T

c5088 transistor

ic ca 747

VP2410L

TP0202T

VP2410L

70221